ABCN Pad ring V7.0 08/02/13F. Anghinolfi1 Revised for power names, io cell name, pads order and pad positions.

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Presentation transcript:

ABCN Pad ring V7.0 08/02/13F. Anghinolfi1 Revised for power names, io cell name, pads order and pad positions

ABC130 RIGHT SIDE 08/02/13 F. Anghinolfi LVDS R 200 LVDS R SIOGND BC RLCK L0_COM R3_L1 200 CMOS ANA REG_A fake REG_D fake ShuntCtrl SIOGND 250 SIOGND 250 SIOGND To FE To BE Chip edge 3150 um um NPNPNPNP Except for Front-End bond pads are 95µm x 190µm

ABC130 BOTTOM SIDE 08/02/13 F. Anghinolfi Follow up on next slide -- LVDS BI CMOS 111 CMOS Chip ID (5) XoffL DataL 111 CMOS 111 SIODVSS LVDS BI 200 SIOGND 111 SIODVSS 111 FastClk TERM To Bottom side Chip edge um Abut left pad of next slide = 391 um NPNPNP

ABC130 BOTTOM SIDE 08/02/13 F. Anghinolfi Follow up on next slide -- Digital Power/Ground (6 pads) Left Group SIOGND SIOVDD SIODVDD SIOGND SIOVDD SIODVDD 7*111 = 777 um SIODVSS DVSSBR GNDD VDDDDVDD GNDD VDDDDVDD DVSS Special Unit Abut left pad of next slide 4 All Power rings cut (BFMOAT) Distance from last supply here, DVSS to DVSSA in the next slide is 179 um

ABC130 BOTTOM SIDE 08/02/13 F. Anghinolfi Follow up on next slide -- Analog Power/Ground (15 pads) SIOGND SIOVDD SIODVDD SIOGND SIOVDD SIODVDD SIOGND SIOVDD SIODVDD SIOGND SIOVDD SIODVDD SIOGND SIOVDD SIODVDD 16* = 1955 um (a few microns shift is possible because of the BFMOAT insertion) GNDA VDDA AVDD GNDA VDDA AVDD GNDA VDDA AVDD GNDA VDDA AVDD GNDA VDDA AVDD SIODVSS DVSSA Abut left pad of next slide 5 All Power rings cut (BFMOAT) SIODVSS DVSSA

ABC130 BOTTOM SIDE 08/02/13 F. Anghinolfi SIOGND SIOVDD SIODVDD Digital Power/Ground (9 pads) Right group SIOGND SIOVDD SIODVDD SIOGND SIOVDD SIODVDD 9*111 = 999 um GNDD VDDDDVDD GNDD VDDDDVDD GNDD VDDDDVDD LVDS T SIODVSS 111 LVDS BI SIOGNDD 111 SIODVSS 111 FC1 FC2 DATR XOFFR Chip edge To Top side 1577 um =380 um NPNPNPNP (a few microns reduction is possible because of the BFMOAT insertion)

Connection through chips 08/02/13 F. Anghinolfi 7

Backside Pads length 6 all5 all Left distance from chipedge to center of the first pad Digital Power Left Analogue Power Digital Power Right Right YYY distance from last pad center to chipedge

Ashley Rehearsal 4 slides 08/02/13F. Anghinolfi9 rather old

Front End Pads ABCn Pads 62 x 117 m 2 62 x 200 m 2 would allow two bond attempts Pitch 119 m side-to-side, 350 m row- to-row Stagger between rows is half pitch (59.5 m ) Have one additional bond pad per end of row for bond testing Leave 250 m on front edge to first bond 08/02/13F. Anghinolfi