Extreme Miniaturization of Passive Electronic Devices for Millimeter Wave Applications Wen Huang, Moyang Li, Jingchao Zhou, Paul Froeter, Julian Michaels, and Xiuling Li* University of Illinois at Urbana-Champaign, *xiuling@illinois.edu and whuang82@illinois.edu Issues of Passive Components for RFICs/MMICs On-chip Self-rolled-up Lumped Inductor >15 turn; >200 nm metal thickness; Composite Cu; Integration of soft magnetic film and core; L>1 μH; Q > 50@5GHz, 1nH; 1nH SRF>30GHz. >15 turn; >200 nm metal thickness; Composite Cu; Reduce ID <50 μm; L >100nH; Q > 10@5GHz, 1nH; 1nH SRF>20GHz. 15 GHz GaN PA 35-43 GHz GaAs PA Current MMIC chips: Large fraction of area is occupied by distributed passive components; Lumped planar passive components are seldom used due to low quality at Mm-wave; Distributed passive component dimensions are proportional to working frequency UHF Transceiver X band CMOS Phased-Array Current RFIC chips: Large fraction of area is occupied by passive electronic components; Lumped planar spiral inductor has the largest on-chip footprint; Large on-chip footprint leads to high fabrication cost per area and serious substrate effect. 1st iteration: Au based; Air-core; 15-turn; 0.3-3.6 nH; Q~1.9@5GHz, 1.6nH (6-cell-9-turn); 1nH SRF>28GHz; 6-cell-15-turn: 280×15μm2 , 857nH/mm2 . 2nd iteration: Cu based; Air-Core; 2-turn; 0.15-1 nH; Q~2.3@5GHz, 1nH (6-cell-2-turn); 1nH SRF>21GHz; 6-cell-2-turn: 280×61μm2 , 61nH/mm2 . Targeted specifications based on modeling and preliminary experimental data: Composite Cu, Magnetic core + magnetic layer, >15 turn, 0.1 nH-μH, Q>50@5GHz, 1nH (2-cell-multiturn); 1nH SRF> 30GHz, >10μH/mm2. Self-rolled-up Passive Electronics Platform[1-8] S-RuM RFICs/MMICs Back-to-Front Design Flow Impact of S-RuM RFIC/MMIC Strain-induced self-deformation; Precision dimension control guided by FEM with 100% fabrication yield; On-chip 3D multi-turn hollow microtube; Cu or other conduction layers; CMOS material and process compatible; Suitable for inductor, transformer, filter, matching network, etc. 2D for 3D platform: ultrasmall, light, high inductance, high frequency, ideal coupling Same design flow as traditional RFIC/MMIC; Wafer-level hermetic cavity packaging possible. ¼ turn 1/2 turn Reference: [1] W. Huang, X. Yu, P. Froeter, R. Xu, P. Ferreira, and X. Li, "On-Chip Inductors with Self-Rolled-Up SiN x Nanomembrane Tubes: A Novel Design Platform for Extreme Miniaturization," Nano letters, vol. 12, pp. 6283-6288, 2012. [2] X. Yu, W. Huang, M. Li, T. M. Comberiate, S. Gong, J. E. Schutt-Aine, et al., "Ultra-Small, High-Frequency, and Substrate-Immune Microtube Inductors Transformed from 2D to 3D," Scientific reports, vol. 5, 2015. [3] W. Huang, M. Li, S. Gong, and X. Li, "Self-rolled-up tube transformers: Extreme miniaturization and performance enhancement," in Device Research Conference (DRC), 2015 73rd Annual, 2015, pp. 223-224. [4] W. Huang, X. Yu, T. Comberiate, C.-W. Qiu, J. E. Schutt-Aine, and X. Li, "Miniaturized on-chip passive devices based on self-rolled-up SiN x nanomembrane inductive tube," in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 227-228. [5] X. Li and W. Huang, "Rolled-up transformer structure for a radiofrequency integrated circuit (RFIC)," ed: Google Patents, 2015. [6] X. Li, W. Huang, P. M. Ferreira, and X. Yu, "Rolled-up inductor structure for a radiofrequency integrated circuit (RFIC)," ed: Google Patents, 2015. [7] X. Li and W. Huang, "Rolled-up transmission line structure for a radiofrequency integrated circuit (RFIC)," ed: Google Patents, 2015. [8] W. Huang, S. Koric, X. Yu, K. J. Hsia, and X. Li, "Precision Structural Engineering of Self-Rolled-up 3D Nanomembranes Guided by Transient Quasi-Static FEM Modeling," Nano Letters, vol. 14, pp. 6293-6297, 2014/11/12 2014 3/4 turn 1 turn