Test beam results of MCz-Si detectors

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Presentation transcript:

Test beam results of MCz-Si detectors P. Luukka On behalf of the CMS SiBT group (http://www.hip.fi/research/cms/tracker/SiBT/php/home.php)

Beam studies Summer 2007 Summer 2008 Summer 2009 Commissioning of the upgraded SiBT (converted CMS long- term test system) at CERN H2 beam line. N-type MCz-sensors (non-irradiated and two irradiated sensors) 10-20 Hz DAQ rate Summer 2008 New n-type MCz sensors FZ sensors (wafers from RD50 common order with Topsil) Data acquisition rate increased to 100 Hz Cold box temperature lowered Introduction of a separate “cold finger” for CID studies Summer 2009 p-type MCz in addition to new n-type MCz and FZ sensors Biasing range extended from 600 to 1000 V May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

Test beam setup CERN North area SPS H2 beamline 225 GeV muon, pion, and mixed beams 10 slot beam telescope based on CMS module test station 8 reference modules and 1-2 DUTs in central slots CMS DAQ electronics with early version of the Tracker SW CMSSW framework used for track reconstruction May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

Sensors Telescope reference sensors: Provided by the D0 collaboration from unused Run IIb stock Hamamatsu FZ 4 cm x 10 cm 60 μm pitch with intermediate strips 639 strips per detector N- and p-type MCz, FZ and CID sensors: Processed at Helsinki University of Technology Micronova Centre for Micro and Nanotechnology 4” silicon wafers from Okmetic and Topsil Two 4 cm x 4 cm detectors from one wafer 50 μm pitch 768 strips per detector May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

Relative CCE as a function of fluence May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

Landau distributions of n-type MCz-Si sensors May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

Collected Charge -n and p-type Mcz-Si sensors May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

CCE of Charge Injected Detectors (operating at -500C, RD39) May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)

Summary and conclusions n-type MCz-Si operational after 1×101 5 ne q/cm2 ,i.e. feasible for S-LHC strip layers. p-type MCz-Si 40% CCE @ 600V and 55% CCE @ 1100V after 2×101 5 ne q/cm2. Performance on p-type similar to n-type after 2 times higher fluence No avalanche multiplication observed up to 1100V May - 2 June 2010 P. Luukka (Helsinki Institute of Physics)