Current Channeling – End View, Vertical Section, Not to scale

Slides:



Advertisements
Similar presentations
Optical sources Lecture 5.
Advertisements

Metal Oxide Semiconductor Field Effect Transistors
Copyright © 2009 Pearson Education, Inc. Lecture 3 – Physical Optics b) Diffraction.
Laser III Device Design & Materials Selection
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK. Electrically pumped terahertz SASER device using a weakly coupled AlAs/GaAs.
Nesibe Lakhani EECS 277A Prof. Richard Nelson
Detector lecturesT. Weidberg1 Opto-electronics Why use opto-electronics –General advantages –HEP experiments Elements of system –Emitters –Fibres –Receivers.
OEIC LAB National Cheng Kung University 1 Ching-Ting Lee Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University.
Semiconducting Light- Emitting Devices James A. Johnson 16 December 2006.
Multiple-Slit Interference Uniform slits, distance d apart. Light of wavelength. Screen L away “Thin” slits  compared to d) L y  L >> d then path length.
Metal Semiconductor Field Effect Transistors
Diode laser The diode or semiconductor laser Diode lasers are extremely compact (0.3×0.2×0.1 mm), high efficiency (up to 40%), tuneable lasers, which have.
Chapter 16 Interference and Diffraction Interference Objectives: Describe how light waves interfere with each other to produce bright and dark.
Fiber Optic Light Sources
Anti-reflection optical coatings Anti-reflection coatings are frequently used to reduce the Fresnel reflection. For normal incidence, the intensity reflection.
5 Luminescence 5.1 Light emission in solids 5.2 Interband luminescence
1 Bipolar Junction Transistor Models Professor K.N.Bhat Center for Excellence in Nanoelectronics ECE Department Indian Institute of Science Bangalore-560.
AP Physics B Summer Course 年 AP 物理 B 暑假班 M Sittig Ch 23: Waves.
Optical Characterization of GaN-based Nanowires : From Nanometric Scale to Light Emitting Devices A-L. Bavencove*, E. Pougeoise, J. Garcia, P. Gilet, F.
Norhayati Soin 06 KEEE 4426 WEEK 7/1 6/02/2006 CHAPTER 2 WEEK 7 CHAPTER 2 MOSFETS I-V CHARACTERISTICS CHAPTER 2.
LW4 Lecture Week 4-1 Heterojunctions Fabrication and characterization of p-n junctions 1.
Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.
1 SEMICONDUCTORS Diode ratings and construction. 2 SEMICONDUCTORS Diodes have two active electrodes between which the signal of interest can flow The.
Tunable lasers The tunable laser could be set to any desired wavelength either in the factory or in the field by a software command. The performance parameters.
111 Notes 22 April 2013 Semiconductor Quantum Wells (QWs) A narrow gap semiconductor is sandwiched between layers of a wide band gap semiconductor Quantum.
Heterostructures & Optoelectronic Devices
Photovoltaics Continued: Chapter March 2014
VLSI INTERCONNECTS IN VLSI DESIGN - PROF. RAKESH K. JHA
LED Construction – Aim – 100% light emitting efficiency ◘Important consideration - radiative recombination must take place from the side of the junction.
AIDA design review Davide Braga Steve Thomas ASIC Design Group 9 December 2008.
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.
UniS Plastic Optical Fibre (POF) minimum in loss at 650nm.
0 Frequency Gain 1/R 1 R 2 R 3 0 Frequency Intensity Longitudinal modes of the cavity c/L G 0 ( ) Case of homogeneous broadening R2R2 R3R3 R1R1 G 0 ( )
Government Engineering College Bharuch Metal Oxide Semiconductor Field Effect Transistors{MOSFET} Prepared by- RAHISH PATEL PIYUSH KUMAR SINGH
01/04/2006 internal report1 Properties of VCSELs (80 µm) Y. Tanguy, M. Schulz-Ruhtenberg 1, T. Ackemann SUPA, Department.
High Power LD, LDA & LDS Speaker: Shiuan-Li Lin Advisor : Sheng-Lung Huang Solid-State Laser Crystal and Device Laboratory.
Chapter 6 The Field Effect Transistor
Date of download: 10/4/2017 Copyright © ASME. All rights reserved.
The Space Movie.
QUANTUM-EFFECT DEVICES (QED)
ECE 4211_Lecture L4_Week F. Jain
OPTICAL FIBRE IN COMMUNICATION
Recall Last Lecture Common collector Voltage gain and Current gain
L7 Lasers UConn ECE /27/2017 F. Jain
Metal Semiconductor Field Effect Transistors
IGBT.
Photonics-More 22 February 2017
6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.
Other FET’s and Optoelectronic Devices
Technician Licensing Class
5 Luminescence 5.1 Light emission in solids 5.2 Interband luminescence
Photonics-LED And LASER 29 February 2016
Spatiotemporal correlation of exocytic events and fluorescence changes in bovine chromaffin cells expressing SCORE. (A, I) Bright-field image of ECD array.
Bipolar Processes Description
Supported by NIH Grant EB
منبع: & کتابMICROELECTRONIC CIRCUITS 5/e Sedra/Smith
Example: 633 nm laser light is passed through a narrow slit and a diffraction pattern is observed on a screen 6.0 m away. The distance on the screen.
by Shuji Nakamura Science Volume 281(5379): August 14, 1998
Surface Emitting Semiconductor Lasers
DOI: /adma
Photovoltaics Continued: Chapter 14 4 and 6 March 2015
SILICON MICROMACHINING
Volume 114, Issue 4, Pages (February 2018)
A. Capacitors B. Inductors C. Resistors D. Transistors
By: Aayush, Sierra, Julie, and Matt
Place, space and memory cells
Mitsuru Imaizumi Space Solar Cells -- I -- HTV-6
Photonics-More 6 March 2019 One More slide on “Bandgap” Engineering.
Fig. 2 Fluidic and electrical characteristics of the wireless optofluidic system. Fluidic and electrical characteristics of the wireless optofluidic system.
Fig. 1 FETs constructed from densely packed semiconducting CNT arrays.
Presentation transcript:

Current Channeling – End View, Vertical Section, Not to scale p-Type Electrode p-GaAs Cap Layer n-GaAs Current Blocking Layer p-AlGaAs Cladding Layer AlGaAs Active Layer Laser Mode Volume n-AlGaAs Cladding Layer p-GaAs Current Blocking Layer n-GaAs Buffer Layer Path of Current Flow Substrate Z Y n-Type Electrode

Gain Increase and Longitudinal Mode Stabilization of Semiconductor Lasers by means of Current Channeling n-GaAs Current Blocking Layer Channeled Current P-GaAs Cap Layer p-AlGaAs Cladding Layer p-Type Electrode Maximum Overlap of Current and Antinode of Standing Wave X-Y Section Laser Emission Standing Wave AlGaAs Active Layer n-GaAs Buffer Layer Z X Y n-GaAs Substrate (Y-direction normal to screen) n-Type Electrode n-Type Electrode Y-Z Section p-GaAs Current Blocking Layer n-AlGaAs Cladding Layer

Schematic of Current Channeling – Top View (not to scale) X-Y Section n-GaAs Current Blocking Layer ~50nm ~0.25mm Y X Current Path Spacing < ~l/4 n-GaAs Current Blocking Layer Spacing = ~l/2 Current Path is Between Blocking Layers Laser Mode Volume

Schematic of Current Channeling – Y-Z Section Approximately to Scale ~0.5mm Entire Active Region is ~100nm ~0.5mm Z Y Substrate Note: Because of the extreme thinness of the active region, it is not possible to show the entire device to scale

Schematic of Current Channeling in Phased Array Diode Laser– Top View (not to scale) X-Y Section ~0.5mm ~0.25mm Y X Emitter “stripe” End View n-GaAs Current Blocking Layers Spacing = ~l/2; Current Path Spacing < ~l/4 Z Y