ACTFEL Device Modeling via SPICE

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Presentation transcript:

ACTFEL Device Modeling via SPICE J. P. Bender and J. F. Wager Department of Electrical and Computer Engineering Center for Advanced Materials Research Oregon State University Corvallis, Oregon 97731-3211 http://www.ece.orst.edu/~jfw

Organization: Fowler-Nordheim Diode Model Double-sheet Charge Model

Fowler-Nordheim Diode Model

Fowler-Nordheim Diode model: Q-V

Fowler-Nordheim Diode model: C-V

Fowler-Nordheim model: Transient response

Fowler-Nordheim model: Transferred Charge Curve Experimental Data

FN Model Scaling with Varying Vmax

Modified Fowler-Nordheim Diode Model

Double-sheet Charge Model Space charge formation is allowed at two discrete locations within the phosphor layer Each sheet can emit and capture electrons

Two-sheet Charge Model Band Diagram

Two-sheet Charge Model Equivalent Circuit

Two-sheet Charge Model 1. Emission Mechanisms Field emission (pure tunneling) Thermal emission Trap-to-band impact ionization 2. Charge Capture The probability that an electron crossing a sheet of charge is captured depends on: Electric field at the sheet Occupancy of the sheet

Two-sheet Charge Model Space Charge Creation via Field Emission

Two-sheet Charge Model Space Charge Creation via Trap-band Impact Ionization

Two-sheet Charge Model: Static Space Charge Ionized traps are not allowed to refill FB= 1.5 V (experimental value) Bulk trap depth = 1.38 V

Transferred Charge Capacitance Overshoot (Two-sheet charge model) Experimental Data Fowler-Nordheim Diode model

Conclusions Fowler-Norheim Diode Two-sheet Charge Model Simple yet accurate SPICE model for devices without space charge Two-sheet Charge Model Demonstrates mapping of device physics to SPICE Large amounts of C-V overshoot in SPICE