Integrated Shunt-LDO Regulator for FE-I4

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Presentation transcript:

Integrated Shunt-LDO Regulator for FE-I4 Michael Karagounis, David Arutinov Universität Bonn Power Distribution Working Group Meeting Feb. 24th 2009

Serial Powering Topology modules are powered in series by a constant current source parallel placed FE-I4 chips at module level integrated regulation circuitry in every FE-I4 chip  avoid additional components on the module  redundancy two different supply voltages per FE-I4 chip needed (1.5V & 1.2V) Regulators should be able: to operate in parallel generate different output voltages

LDO Regulator with Shunt Transistor (ShuLDO) Simplified Schematic Combination of LDO and shunt transistor M4 shunts the current not drawn by the load Fraction of M1 current is mirrored & drained into M5 Amplifier A2 & M3 improve mirroring accuracy Ref. current defined by resistor R3 & drained into M6 Comparison of M5 and ref. current leads to constant current flow in M1 Ref. current depends on voltage drop VIin which again depends on supply current Iin „Shunt-LDO“ regulators having completely different output voltages can be placed in parallel without any problem regarding mismatch & shunt current distribution Resistor R3 mismatch will lead to some variation of shunt current (10-20%) „Shunt-LDO“ can cope with an increased supply current if one FE-I4 does not contribute to shunt current e.g. disconnected wirebond  ref current goes up Can be used as an ordinary LDO when shunt is disabled Slide 3 3 3

Shunt - LDO Voltage Current Characteristic Simulation Current flowing through the regulator (Power PMOS transistor M1) Vout Regulator output voltage (green) Vin potential between Iin & Iout (blue) linear voltage to current characteristic slope is defined by reference resistor R3 divided by the current mirror aspect ratio 2kOhm/1000=2Ohm Output voltage stays stable as soon the amplifiers are saturated and the final value is reached.

Parallel Regulator Operation Simulation Vout=1.5 Vout=1.2 2 regulators placed in parallel with Vout1=1.2 and Vout2=1.5 Output voltages settle at different potentials Current flowing through the regulator stays the same

Setup for Test Measurements Two Shunt – LDO regulators are connected in parallel on-chip  avoid influence of PCB parasitics biasing & reference voltage is provided externally input & load current is provided by programmable Keithley sourcemeter input & output voltages are measured automatically using a Labview based system developed by D. Arutinov

Two Shunt-LDO parallel connected on-chip Measurement Simulation Saturation point is reached for smaller input currents and is more abrupt than in simulation Non constant slope of Vin Vout1 and Vout2 slightly decrease with rising input current  IR drop on ground rail leads to smaller effective reference voltage Slide 7 7

Load Regulation Measurement Iin = 800mA 1.5V output voltage sees a fix load I=400mA 1.2V output has variable load Iload 1.2V output voltage sees a fix Iload=400mA 1.5V output has variable Iload Input & output voltages collapse when the overall load current reach the input current value Effective output impedance of R = 50-60 mOhm (incl. wire bonds & PCB traces)

Setup for Measurement of Shunt Currents direct measurement of shunt current distribution is not possible  regulators are connected in parallel on-chip shunt capability can be switched-off by defining zero reference current  use of special dedicated bond pads two SHULDO test chips connected in parallel on PCB level  each test chips has one operational regulator and one regulator switched-off shunt current is measured by 10 mOhm series resistors & instrumentation opamp Slide 9 9

Single Shunt Operation Measurement Simulation Input voltage potential level around ~1.9 is reached with half of the current (500mA) with respect to parallel operation of two regulators  Shunt capability of 2nd regulator is switched-off Slide 10

Current Distribution Measurement preliminary Unbalanced shunt current distribution unless both regulators are saturated More shunt current is flowing through the regulator which saturates first Non-constant slope of input Voltage closely related to shunt current distribution Slide 11

Reason for Unbalanced Shunt Current Distribution Bad mirror accuracy for non saturated transistors Current drained by non-saturated MOS transistors depends on Vds Offset of diff. amplifier A2 leads to different Vds voltages across M1 & M2  wrong current is compared to the reference Because of high current mirror aspect ratio (1000) even a small Vds mismatch leads to a big shunt current mismatch Current drained by saturated transistor is less dependent on Vds  improvement of shunt distribution as soon both transistors are saturated detailed Monte-Carlo study needed to reduce offset Slide 12

Shunt Current Simulation with Offset Voltage Offset voltage of 20 mV leads to simulation result similar to measurement results Slide 13

Conclusion & Plans Shunt-LDO working principle demonstrated by prototype  Parallel connected regulators generate different output voltages out of a single current supply Stable operation of Shunt – LDO regulator observed (no oscillations) Prototype study revealed circuit part which is crucial for balanced shunt current distribution More regulator characteristics to be studied by measurements  Real serial powered system to be developed  Test of pure LDO regulator operation with shunt capability switched-off Detailed Monte-Carlo study for reduction of voltage offset in current mirror amplifier Integration of biasing and reference voltage circuits Next Submission: March, 16th Slide 14

Spare Slides: Shunt Current Distribution Two parallel connected Shunt-LDO regulators with same output voltage shunt the same current during power up Slide 15

Spare Slides: Shunt Current Distribution output voltage is changed with both regulators beeing saturated Vout1 fixed at 1.2V Vout2 varies ( 1.2V – 1.5V ) shunt current changes about 8 mA  1.4 %

Spare Slides: Load Transient Behaviour load current pulse of 150mA 15mV measured across 100mOhm 10mV output voltage change measured output impedance Rout=66mOhm including wire bonds & PCB traces Slide 17