Product Family Presentation: Automotive Asynchronous SRAM Cypress Has the Industry’s Broadest Portfolio of High-Speed, Low-Power and On-Chip ECC SRAMs Automotive Asynchronous SRAM Product Family Presentation Cover 1

Modern Automotive Systems Need Ultra-Reliable SRAMs Modern automotive systems cannot tolerate single-bit errors in SRAMs Traditional SRAMs get corrupted by single-bit errors caused by unavoidable cosmic background radiation Advanced computing systems will crash if there are bit errors in their SRAM configuration1 memories Automotive data logging systems require ultra-reliable, low-power SRAMs to store critical data for long periods Automotive manufacturers require high-speed SRAMs with Error-Correcting Code2 (ECC) for critical applications Driver Assistance System by Hella Infotainment System by Hyundai Engine Control Unit by Bosch Image alignment Cypress is a market leader in the Asynchronous SRAM space, and offers the broadest portfolio of fast asynchronous and low-power asynchronous SRAM (MoBL™) devices. Asynchronous SRAMs are used in a wide variety of industrial, medical, commercial, automotive and military applications that require the highest standards of reliability and performance. Best-in class process technology and manufacturing; steadfast customer support; and high quality design ensure that Cypress asynchronous SRAM devices meet and exceed expectations. Cypress continues to invest into SRAM technology to create new and innovative products even as a number of manufacturers have exited the space. Modern automotive systems require ultra-reliable, high-speed, low-power SRAMs with on-chip ECC 1 Memory devices used to boot up system configuration registers, where a single-bit error can cause a system crash 2 Data encoded with extra parity bits to detect and correct bit errors Market Vision 2

Cypress Is the SRAM Market Leader Cypress is the world’s largest, most experienced Asynchronous SRAM1 supplier with: >35% share in the automotive market 10 generations of Asynchronous SRAM designs More R&D investment than any competitor Cypress has the broadest Asynchronous SRAM portfolio, offering: A one-stop shop for all automotive Asynchronous SRAM needs in Infotainment, Powertrain and driver-assistance systems Automotive high-speed SRAMs from 256Kb to 16Mb Automotive low-power SRAMs from 256Kb to 16Mb Eight new ultra-reliable SRAMs with on-chip Error-Correcting Code for single-bit error detection and correction Three new ultra-reliable PowerSnooze2 SRAMs, which enable both 10-ns access time and low power consumption Cypress is the most dependable Asynchronous SRAM supplier, offering: Product support for >10 years Lead times of ≤6 weeks with >99% on-time delivery Multiple qualified fabs, assembly sites and test sites For update Cypress is the global market leader in Asynchronous SRAMs with the broadest automotive portfolio 1 An SRAM device in which read or write operations do not require an external clock 2 A Fast SRAM with a deep-sleep mode in addition to a conventional standby mode Market Positioning 3

Terms You Will Hear Today Asynchronous SRAM An SRAM device in which read or write operations do not require an external clock Fast SRAM High-speed Asynchronous SRAMs with an access time of ≤20 ns More Battery Life™ (MoBL®) SRAM Low-power Asynchronous SRAMs with ≤2-µA/Mb standby current Also known as MicroPower™ SRAM Soft Error A bit error caused by cosmic background radiation Failures-in-Time (FIT) Rate Reliability measurement of the projected failure rate of a device per megabit of data (FIT/Mb) One FIT/Mb equals one projected bit failure per Mb of the data stored over one billion hours of device operation Error-Correcting Code (ECC) Data encoded with extra parity bits to detect and correct bit errors PowerSnooze™ SRAM A Fast SRAM with a deep-sleep mode in addition to a conventional standby mode For example, the 12-ns 16Mb offering has a deep-sleep current of ≤1.37 µA/Mb and a standby current of ≤1.87 mA/Mb ERR Pin A status pin on Cypress Asynchronous SRAMs with on-chip ECC that indicates the occurrence of a single-bit error ToA 4

Design Problems Engineers Face FIT Rates of <10 FIT/Mb are unachievable in standard SRAMs without on-chip ECC Today’s standard SRAMs have FIT Rates of 150-1,500 FIT/Mb Correcting Soft Errors with system-level ECC solutions forces undesirable system design trade-offs System-level ECC solutions increase design complexity and cycle time They also require additional memory and error-correcting chips, increasing board space and cost Automotive systems require high-performance SRAMs with high speed and low standby current A typical 16Mb high-speed SRAM with a 10-ns access time consumes 30-mA standby current A typical 16Mb low-power SRAM with a 16-µA standby current has an access time greater than 35 ns End-of-life decisions from SRAM suppliers force board redesign and product requalification The automotive market requires long product life cycles (>10 years) and suppliers with staying power Cypress’s Asynchronous SRAMs solve these problems with: A FIT rate of <0.1 FIT/Mb, which is 1,000x to 10,000x lower than that of standard SRAMs A single-chip solution with on-chip ECC that reduces design complexity, board space, cycle time and cost A 10-ns access time and a 22-µA deep-sleep current (PowerSnooze SRAM) that is 1,000x lower than the 30-mA standby current of conventional 16Mb high-speed SRAMs Support for >10 years on all Asynchronous SRAMs Cypress offers the broadest portfolio of high-performance automotive SRAMs with on-chip ECC and backs it up with the long-term support and the staying power you need Design Problems 5

Cypress 2013 Annual Report Cover Cypress is so proud of its Automotive design wins that we listed them on the cover of our 2013 Annual Report Solution 6

Cypress Automotive Asynchronous SRAMs vs. Competition’s Low-Power SRAM Features CY62x IS65X Access Time (TAA) 45 ns, 55 ns, 70 ns Standby Current (ISB1) 7 µA 20 µA Grade Auto A2, E3 Operating Voltage (VCC) 1.65-5.50 V On-Chip ECC 16Mb Not available Soft Error Rate4 <0.1 FIT/Mb <1 FIT/Mb High-Speed SRAM Features CY7Cx IS64x Access Time (TAA) 10 ns Active Current (ICC5) 100 mA 40 mA Grade Auto A2, E3 Operating Voltage (VCC) 1.65-5.50 V On-Chip ECC 8Mb, 16Mb 1-8Mb Standby Current 10 µA6 Not available Soft Error Rate5 <0.1 FIT/Mb <0.5 FIT/Mb 1 Maximum value for 4Mb at 3.0 V, +85C 2 AEC-Q100: -40ºC to +85ºC 3 AEC-Q100: -40ºC to +125ºC 4 The rate at which a device is predicted to have Soft Errors 5 Typical value for 4Mb at 3.0 V, +85C 6 Value for 4Mb PowerSnooze SRAM Competition 7

Automotive Portfolio: Asynchronous SRAM Fast SRAM Low-Power SRAM (MoBL®1) PowerSnooze™2 SRAM Serial SRAM Non-ECC3 ECC3 Quad-SPI4, ECC3 32Mb-128Mb CY6218x 64Mb; 2.5, 3.0 V 55 ns; x8, x16 Other densities NDA Required Contact Sales Other densities NDA Required Contact Sales CY7C107x 32Mb; 3.3 V 12 ns; x8, x16 CY6217x 32Mb; 2.5, 3.0, 5.0 V 55 ns; x8, x16 2Mb-16Mb CY7C106x 16Mb; 1.8, 3.3 V 10 ns; x8, x16, x32 NEW CY7C106x 16Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 Q215 CY6216x 16Mb; 3.0 V 45 ns; x8, x16 Grade: A6 CY6216x 16Mb; 1.8-5.0 V 45 ns; x8, x16, x32 Grade: E5 NEW Q215 CY7S106x 16Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY7C105x 8Mb; 3.3 V 10 ns; x8, x16 CY7C1012 12Mb; 3.3 V 10 ns; x24 CY7C105x 8Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY6215x 8Mb; 3.0, 5.0 V 45 ns; x16 Grades: A6 and E5 CY6215x 8Mb; 1.8-5.0 V 45 ns; x8, x16, x32 Grade: E5 Q315 CY7S105x 8Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY7C104x 4Mb; 3.3, 5.0 V 10 ns; x8, x16 Grades: A6 and E5 CY7C1034 6Mb; 3.3 V 10 ns; x24 NEW CY7C104x 4Mb; 1.8-5.0 V 10 ns; x8, x16 Grade: E5 CY6214x 4Mb; 3.0, 5.0 V 45 ns; x8, x16 Grades: A6 and E5 NEW CY6214x 4Mb; 1.8-5.0 V 45 ns; x8, x16 Grade: E5 CY7S104x 4Mb; 1.8-5.0 V 10 ns; x8, x16 Grade: E5 NEW CY7C1011 2Mb; 3.3 V 10 ns; x16 Grades: A6 and E5 CY7C1024 3Mb; 3.3 V 10 ns; x24 CY6213x 2Mb; 3.0 V 45 ns; x8, x16 Grades: A6 and E5 64Kb-1Mb CY7C1020 512Kb; 2.6, 3.3 V 15 ns; x16 Grade: E5 CY7C1019/21 1Mb; 2.6, 3.3, 5.0 V 10 ns; x8, x16 Grades: A6 and E5 CY6212x 1Mb; 3.0, 5.0 V 45 ns; x8, x16 Grades: A6 and E5 CY7C185 64Kb; 5.0 V 15 ns; x8 CY7C199 256Kb; 5.0 V 12 ns; x8 Grades: A6 and E5 CY62256 256Kb; 5.0 V 55 ns; x8 Grades: A6 and E5 Production Development QQYY Availability Sampling Concept Automotive Industrial 1 More Battery Life™ 2 Fast SRAM with low-power sleep mode 3 Error-correcting code 4 Serial peripheral interface 5 AEC-Q100: -40ºC to +125ºC 6 AEC-Q100: -40ºC to +85ºC Roadmap 8

Automotive Portfolio: Asynchronous SRAM Fast SRAM Low-Power SRAM (MoBL®1) PowerSnooze™2 SRAM Serial SRAM Non-ECC3 ECC3 Quad-SPI4, ECC3 32Mb-128Mb CY6218x 64Mb; 2.5, 3.0 V 55 ns; x8, x16 CY6218/9x 64Mb; 1.8-5.0 V 55 ns; x8, x16, x32 Grade: E5 CYSS108x 64Mb; 1.8-5.0 V 12 ns; x8, x16, x32 Grade: E5 CY7C107x 32Mb; 3.3 V 12 ns; x8, x16 CY6217x 32Mb; 2.5, 3.0, 5.0 V 55 ns; x8, x16 CY6217x 32Mb; 1.8-5.0 V 45 ns; x8, x16, x32 Grade: E5 CYSS107x 32Mb; 1.8-5.0 V 12 ns; x8, x16, x32 Grade: E5 2Mb-16Mb CY7C106x 16Mb; 1.8, 3.3 V 10 ns; x8, x16, x32 CY7C106x 16Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY6216x 16Mb; 3.0 V 45 ns; x8, x16 Grade: A6 CY6216x 16Mb; 1.8-5.0 V 45 ns; x8, x16, x32 Grade: E5 NEW Q215 CY7S106x 16Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY7C105x 8Mb; 3.3 V 10 ns; x8, x16 CY7C1012 12Mb; 3.3 V 10 ns; x24 CY7C105x 8Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY6215x 8Mb; 3.0, 5.0 V 45 ns; x16 Grades: A6 and E5 CY6215x 8Mb; 1.8-5.0 V 45 ns; x8, x16, x32 Grade: E5 Q315 CY7S105x 8Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Grade: E5 NEW Q215 CY7C104x 4Mb; 3.3, 5.0 V 10 ns; x8, x16 Grades: A6 and E5 CY7C1034 6Mb; 3.3 V 10 ns; x24 CY7C104x 4Mb; 1.8-5.0 V 10 ns; x8, x16 Grade: E5 NEW Q315 CY6214x 4Mb; 3.0, 5.0 V 45 ns; x8, x16 Grades: A6 and E5 CY6214x 4Mb; 1.8-5.0 V 45 ns; x8, x16 Grade: E5 NEW Q315 CY7S104x 4Mb; 1.8-5.0 V 10 ns; x8, x16 Grade: E5 NEW Q315 CY7C1011 2Mb; 3.3 V 10 ns; x16 Grades: A6 and E5 CY7C1024 3Mb; 3.3 V 10 ns; x24 CY6213x 2Mb; 3.0 V 45 ns; x8, x16 Grades: A6 and E5 64Kb-1Mb CY7C1020 512Kb; 2.6, 3.3 V 15 ns; x16 Grade: E5 CY7C1019/21 1Mb; 2.6, 3.3, 5.0 V 10 ns; x8, x16 Grades: A6 and E5 CY6212x 1Mb; 3.0, 5.0 V 45 ns; x8, x16 Grades: A6 and E5 CYSS101 1Mb; 1.8, 3.0-5.0 V 40 MHz, 108 MHz Grade: E5 CY7C185 64Kb; 5.0 V 15 ns; x8 CY7C199 256Kb; 5.0 V 12 ns; x8 Grades: A6 and E5 CY62256 256Kb; 5.0 V 55 ns; x8 Grades: A6 and E5 CYSS064/256/512 64-512Kb; 1.8, 3-5.0 V 40 MHz, 108 MHz Grade: E5 Production Development QQYY Availability Sampling Concept Automotive Industrial 1 More Battery Life™ 2 Fast SRAM with low-power sleep mode 3 Error-correcting code 4 Serial peripheral interface 5 AEC-Q100: -40ºC to +125ºC 6 AEC-Q100: -40ºC to +85ºC Roadmap 9

Product Overview: Fast SRAM Family with On-Chip ECC Applications Family Table Infotainment systems Driver assistance Driver information Powertrain Telematics Density MPN Access Time Supply Current (Max. at 85ºC) 4 Mb CY7C104x 10 ns 45 mA 8 CY7C105x 60 16 CY7C106x 110 Features Block Diagram Access time: 10 ns or 12 ns (see Family Table) Bus-width configurations: x8, x16, x32 Wide operating voltage range: 1.65-5.5 V Available in automotive temperature (A1 and E2) grades Industry-standard, RoHS-compliant packages Error-correcting code (ECC) to detect/correct single-bit errors Bit-interleaving to avoid multi-bit errors Error-indication (ERR) pin to indicate single-bit errors Packages: 48-pin VFBGA, 48-pin TSOP1 Fast SRAM with ECC SRAM Array Address Decoder ECC Encoder Input Buffer 8, 16, 32 Data 18-23 I/O Mux ERR Address SRAM Array Sense Amps ECC Decoder Control Logic CE OE WE BHE3 BLE4 Collateral Availability Preliminary Datasheet: Contact Sales Sampling: Q2 2015 (16Mb) Production: Q2 2015 (16Mb) 1 AEC-Q100: -40ºC to +85ºC 2 AEC-Q100: -40ºC to +125ºC 3 Byte high enable 4 Byte low enable Product Details 10

Product Overview: MoBL® SRAM Family with On-Chip ECC Applications Family Table Infotainment systems Telematics Density MPN Standby Current (Max. at 85ºC) Standby Current (Typ. at 25ºC) 4 Mb CY6214x 8 µA 2.5 CY6215x 9 3.0 16 CY6216x 4.6 32 CY6217x 58 9.0 64 CY6218x Features Block Diagram Access time: 45 ns for 16Mb Standby current: 16 µA for 16Mb Multiple bus-width configurations: x8, x16 and x32 Wide operating voltage range: 1.65-5.5 V Available in automotive temperature (A2 and E3) grades Industry-standard, RoHS-compliant packages Error-correcting code (ECC) to detect/correct single-bit errors Bit-interleaving to avoid multi-bit errors Error-indication (ERR) pin to indicate single-bit errors Packages: 48-pin VFBGA, 48-pin TSOP1 MoBL®1 SRAM with ECC Address Decoder SRAM Array ECC Encoder Input Buffer 8, 16, 32 18-23 I/O Mux Data ERR Address Sampling and prodn date updated from Q115 to Q215 SRAM Array Sense Amps ECC Decoder Control Logic CE OE WE BHE4 BLE5 Collateral Availability Preliminary Datasheet: Contact Sales Sampling: Q2 2015 (16Mb) Production: Q2 2015 (16Mb) 1 More Battery Life™ 2 AEC-Q100: -40ºC to +85ºC 3 AEC-Q100: -40ºC to +125ºC 4 Byte high enable 5 Byte low enable Product Details 11

Product Overview: Fast SRAM Family with PowerSnooze™ Applications Family Table Infotainment systems Driver assistance Driver information Powertrain Telematics Density MPN Access Time Deep Sleep Current (Max. at 85ºC) 4 Mb CY7S104x 10 ns 12 µA 8 CY7S105x 22 16 CY7S106x Features Block Diagram Access time: 10 ns or 12 ns (see Family Table) PowerSnooze™: Additional power-saving (deep-sleep) mode Deep-sleep current: 23 µA for 16Mb (see Family Table) Multiple bus-width configurations: x8, x16 and x32 Wide operating voltage range: 1.65-5.5 V Available in automotive temperature (A1 and E2) grades Industry-standard, RoHS-compliant packages Error-correcting code (ECC) to detect/correct single-bit errors Bit-interleaving to avoid multi-bit errors Packages: 48-pin VFBGA, 48-pin TSOP1 Fast SRAM with PowerSnooze™ ECC Encoder Input Buffer Address Decoder 8, 16, 32 20 SRAM Array I/O Mux Data Address ERR Power Management Block (Enables PowerSnooze) Sense Amps ECC Decoder Sampling and prodn date updated from Q115 to Q215 Control Logic DS3 CE OE WE BHE4 BLE5 Collateral Availability Preliminary Datasheet: Contact Sales Sampling: Q2 2015 (16Mb) Production: Q2 2015 (16Mb) 1 AEC-Q100: -40ºC to +85ºC 2 AEC-Q100: -40ºC to +125ºC 3 Deep-sleep 4 Byte high enable 5 Byte low enable Product Details 12

Product Overview: Serial SRAM Family Applications Family Table Infotainment systems Density MPN Clock Frequency Standby Current (Typ. at 25ºC) 1 Mb CYSS101x 108 MHz µA 32 CYSS132x 8 64 CYSS164x Features Block Diagram High speed: 108-MHz serial peripheral interface (SPI) Ultra-low standby current: 6 µA at 85ºC (1Mb) SPI: Single, dual and quad channels Wide operating voltage range: 1.8-5.0 V Available in automotive temperature (A1 and E2) grades Error-correcting code (ECC) to detect/correct single-bit errors Packages: 8-pin SOIC, 8-pin TSSOP SRAM Array SPI Control Logic and Instruction Decoder Memory Data Address Control Register CS3 Clock I/O0 I/O1 I/O2 I/O3 Serial SRAM Collateral Availability Preliminary Datasheet: Contact Sales Contact Sales 1 AEC-Q100: -40ºC to +85ºC 2 AEC-Q100: -40ºC to +125ºC 3 Chip select Product Details 13

Entertainment and Communications Subsystems SRAM Solution Example: Automotive Infotainment System SRAM Value Block Diagram Design Challenges Limited availability of automotive Asynchronous SRAMs with Error-Correcting Code Long lead times to sampling and production Short life cycle of available products Cypress SRAM Solution Asynchronous SRAMs with on-chip ECC in automotive grade ≤6 weeks lead times in production at >99% on-time delivery >10 years of support and a roadmap for the future Touch Controller 2 I2C Navigation, Entertainment and Communications Subsystems 2 2 CAN 2 MCU 16 SRAM 2 USB Suggested Collateral Automotive Brochure Automotive Product Selector Guide Automotive Infotainment System by Hyundai SRAM stores information required to communicate with the satellite transceiver. SRAM is used for storage of variables & dynamic databases. How To Get Started Click on the links above to download the SRAM Portfolio Order Samples from your distributor: www.cypress.com/DistiList Register at www.cypress.com/TechnicalSupport for online technical support Product Example 14

Here’s How to Get Started 1. Find the Cypress equivalent for a competitor’s part: www.cypress.com/Crossreference 2. Select products from the product selector table: www.cypress.com/productselector 3. Register to access online technical support: www.cypress.com/TechnicalSupport 4. Take our Asynchronous SRAM training: www.cypress.com/GettingStarted 5. Download the Cypress automotive roadmap: www.cypress.com/automotiveroadmap 6. Visit the Asynchronous SRAM with ECC webpage: www.cypress.com/AsyncSRAMECC Getting Started 15

Automotive Asynchronous SRAM Product Family Presentation APPENDIX Automotive Asynchronous SRAM Product Family Presentation Appendix 16

16Mb MoBL® SRAM Product Selector Guide Part Number Bus Width Access Time # CE Pins Voltage Temp Package CY62167G30-45BVXA x16 45 ns 2 2.20-3.60 V -40 to 85°C 48-VFBGA CY62167G30-55BVXE 55 ns -40 to 125°C CY62167G30-45ZXA 48-TSOP I CY62167G30-55ZXE 16Mb MoBL SRAM Part Numbering Decoder CY 6216 7 G 30 - XX XX XA/E Pb-Free Automotive Temperature Grades; A = -40ºC to 85ºC, E = -40ºC to 125ºC Package Type: BV = 48-VFBGA, Z = 48-TSOP I Speed Grade: 45 = 45 ns, 55 = 55 ns Voltage Range: 30 = 2.20-3.60 V Process Technology: G = 65 nm Bus Width: 7 = x16 6216: 16Mb MoBL SRAM Family Company ID: CY = Cypress Product Selector Guide 17

16Mb Fast SRAM Product Selector Guide Part Number Bus Width Access Time # CE Pins Voltage Temp Package CY7C1061G30-10ZXE x16 10 ns 1 2.20-3.60 V -40 to 125°C 48-TSOP I CY7C1061G30-10BV1XE 48-VFBGA 16Mb Fast SRAM Part Numbering Decoder CY 7C106 1 G 30 - 10 XXX XE Pb-Free Automotive Temperature Grade; E = -40ºC to 125ºC Package Type: Z = 48-TSOP I, BV1 = 48-VFBGA Speed: 10 = 10 ns Voltage Range: 30 = 2.20-3.60 V Process Technology: G = 65 nm Bus Width: 1 = x16 7C106: 16Mb Fast SRAM Family Company ID: CY = Cypress Product Selector Guide 18

References and Links Asynchronous SRAM with ECC webpage: www.cypress.com/AsyncSRAMECC Asynchronous SRAM training: www.cypress.com/GettingStarted Cypress Automotive roadmap: www.cypress.com/automotiveroadmap Cypress Product Selector Guide: www.cypress.com/PSG Knowledge Base articles: www.cypress.com/AsyncKBA Asynchronous SRAM datasheets: www.cypress.com/AsyncDatasheets Asynchronous SRAM app notes: www.cypress.com/AsyncAppNotes SRAM Board Design Guidelines training video: www.cypress.com/SRAMDesignGuidelines 4Mb Asynchronous SRAM with ECC preliminary datasheets: www.cypress.com/contactus Cypress equivalent for a competitor’s part: www.cypress.com/Crossreference Product selector table: www.cypress.com/productselector Online technical support: www.cypress.com/TechnicalSupport References 19

Automotive 16Mb SRAM with On-Chip ECC $5.44 $2.13 $0.15 $7.72 Competitor Asynchronous Fast SRAM (R1LV1616RBG-5SI) without ECC Price: $5.441 BOM Integration Additional SRAM for ECC data (RMLV0416EGBG-4S2) Price: $2.131 Additional Value Cost of creating MCU firmware for ECC logic Value: $0.152 Competitor RMLV0416EGBG-4S2 BOM Integration Value Cost of Creating MCU Firmware for ECC Logic Total Additional Value Total Value Delivered Automotive MicroPower SRAM with ECC: Total Cost: 19% Total Savings: CY62167G30-45BVXA $6.271 $1.45 1 Approximate 100ku pricing 2 5 man-weeks at $3,000 per man-week = $15,000 (amortized over 100ku) Pricing 20