ESR for the muon DT Minicrate System System Overview ESR for the muon DT Minicrate System CERN. November 3rd 2003.

OVERVIEW OF THE MC ELECTRONICS 2 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 OVERVIEW OF THE MC ELECTRONICS MINICRATE

RESPONSABILITIES ROB (Read-Out Board) 3 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 RESPONSABILITIES ROB (Read-Out Board) • 128 channels, 4 HPTDC per board. ROL (Read-Out Link board) CIEMAT (Madrid) TRB (Trigger server boards) • Select the two best muon candidates in each board. • 128 channels, 32 BTI´s per board, 4 TRACO per board. CCB (Control Board) CCB-Link INFN (Padova) SB (Server boards) • Selects two best muon candidates in the chamber. INFN (Bologna) Mechanics All

LOCATION IN THE DETECTOR 4 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 LOCATION IN THE DETECTOR Electronics attached to chambers: Drastic minimisation of cables.

MC TO CHAMBER CONNECTION 5 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MC TO CHAMBER CONNECTION SLΦ1 SLΘ TRB/ROB Φ TRB/ROB Φ TRB/ROB Φ TRB/ROB Φ TRB/ROB Θ TRB/ROB Θ SLΦ2 Nº of channels/board tries to find a compromise between high granularity (multiplication of common components) and low granularity (increase the number of unused channels).

DISTRIBUTION ON THE DETECTOR 6 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 DISTRIBUTION ON THE DETECTOR Left and right minicrates depending on the service layout on each wheel inside the iron yoke.

MINICRATE LAYOUT 7 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MINICRATE LAYOUT

CABLES OUTGOING FROM A MINICRATE 8 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 CABLES OUTGOING FROM A MINICRATE

MINICRATE ASSEMBLY SEQUENCE 9 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MINICRATE ASSEMBLY SEQUENCE

MC LINKS CCB link ROB link TTC optical connection Alignment RPC 10 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MC LINKS CCB link TTC optical connection Alignment ROB link RPC RJ-45 copper link

3.3 V Digital 5.0 V Digital MC POWER SUPPLY 11 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MC POWER SUPPLY MINICRATE POWER CONSUMPTION: Min. 85 W Max. 161 W 3.3 V Digital The voltage at chamber input is nominally 4 V (as it is followed by low drop regulators). The current at the load can be any value between 0 and 35 A. PS must be designed to provide at least 20% more current than maximum nominally required: 42 A. The voltage at the Load is nominally 6 V, as it is followed by one low drop regulator. The current at the Load will be any value between 0 and 1.5 A. PS must be designed to provide at least 20% more current than maximum nominally required: 1.8 A 5.0 V Digital

TRB’s & ROB’s 3.3V Low drop regulator CCB 5V Low drop regulator 12 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MC POWER SUPPLY Independent systems per wheel. 3.3V digital TRB’s & ROB’s 3.3V Low drop regulator on each board 4V 6 V 5 V digital CCB 5V Low drop regulator 6V 8 V TOWERS MINICRATE 5 EASY MODULES A3003 25 EASY MODULE A3050 ~1 m 10-20 m cable Patch connector

Refrigeration by 15ºC water circulation. 13 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 WATER COOLING SYSTEM Refrigeration by 15ºC water circulation.

MC PROTOTYPING We have produced: 14 ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 MC PROTOTYPING We have produced: • 2 MB1 prototypes: Padova: Read-Out and Trigger part assembled and operated in May 03 test beam. Madrid • 1 MB2 at ISR: for testing insertion on chamber. • 1 MB3 in Legnaro: waiting to be equipped with TRB´s. • 1 MB1 definitive (left) in Madrid.

BURN-IN In the MIL-STD-883E methods 1015 and 5004 of the MIL handbook ESR / MUON DT MINICRATE SYSTEM. Overview. November 3rd , 2003 BURN-IN In the MIL-STD-883E methods 1015 and 5004 of the MIL handbook (http://www.weibull.com/knowledge/milhdbk.htm) It is stated that for class level B devices (i.e. general applications) a working point for a burn-in test is 125º C for 160 hours. This screens off both infant mortality and early lifetime failure. For just infant mortality the test time can be reduced by a factor 0.25. For converting to another temperature, use the Arrhenius law. There is a parameterto to be set: the reaction activation energy. This has a typical value of 0.4-0.5 eV for most defects, including bond defects. (see f.i. 1992 INTEL manual on "Components Quality and Reliability" ). Then with the Arrhenius law one gets a reaction deceleration factor of about 10 when lowering the temperature from 125 to 60 degrees, i.e. 160 hours at 125 become 1600 hours at 60º C. Thus screening off just the infant mortality for boards with all commercial components takes 400 hours at 60º C.