A high mobility III-V transistor demonstration for the

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Presentation transcript:

A high mobility III-V transistor demonstration for the future “smart” electronics applications M.-H. Liao* and L.-C. Chang 產業應用: A high mobility III-V transistor design for future “smart” electronics. Applications for “smart” electronics New material ! Intel Process Demonstration

The III-V device demonstration ( with 3X higher mobility than Si) by Gate Last and IMP free process in NTU M.-H. Liao* and L.-C. Chang Current Issues for the III-V device: (Blue Mark shows what we do in this work) Low Density of state: QW structure. Poor HK quality and high Dit: ALD-Al2O3 with F treatment + Gate Last process. Stress Response: Band structure optimization by stress on different III-V structures (InAs). SCE: FinFET structure and doping/thermal optimization. Rsd reduction/Activation Difficulty: Highly Epi-doped with IMP Free + Gate Last process. Id-Vg Tested Pattern Process Demonstration Id-Vd Good epi-quality

A Chamber Design with the calibrated Simulation Model and Monitor by remote sensors in semiconductor process for 18” wafer M.-H. Liao*, C.-H. Chen, and S.-C. Kao 產業應用: A Chamber Design and Optimization for Semiconductor Industry (18”). Flow field Temperature profile Using CFD Software Re-Build a reactor to test/calibrate the simulation model and design Change the design Movie: TWISTER 1996, Spielberg, Hellen Hunt, Bill Paxton, Cary Elwes http://www.zuguide.com/#Twister http://www.imdb.com/media/rm2228591616/tt0117998 Simulation and Calibration Inspiration: Our Work: Concept : Chamber Chamber Design: Sensors can record the temp., pressure, and flow in the chamber and we can compare them with the simulation data to do the calibration. Gas flow Sensors

Defect extraction with high resolution by PALS in SiGe and III-V material M.-H. Liao* and C.-H. Chen 產業應用: High resolution defect (concentration, type, size..) extraction method. Due to the high emission radiative lighting source, PALS can provide the high resolution on defect extraction. - Defect type, size, concentration all can be extracted by this spectra in III-V and SiGe material.