Pt-Ox Test Results Wafer Processing and SEM by Kenneth Leedle

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Presentation transcript:

Pt-Ox Test Results Wafer Processing and SEM by Kenneth Leedle Results compiled by Yunhan Chen Spring 2016

Dense (0.6um line/ 1.4um space)/Iso ER Pt-Ox Recipe 1 Recipe: 600W ICP/ 50W BP/ 45 CHF3/ 2 O2/ 5mT/ 4T He/ 10C Electrode/ 70C liner 90C Spool and 90C lid temp Wafers: Silicon wafer Single crystal silicon wafer with 1.6mm 3612 photoresist and patterned with resolution mask. Oxide wafer 1mm thermal SiO2 with 1.6mm 3612 photoresist and patterned with resolution mask. Procedure: Both patterned Silicon wafers and patterned Oxide wafers are etched using the above recipe. For Silicon wafer, PR thickness is measured before and after etch using NanoSpec for getting PR etch rate. PR is then stripped and Si step height is measured for getting Si etch rate. For Oxide wafer, Oxide thickness are measured pre and post etch in NanoSpec for getting Oxide etch rate. Results: PR Etch Rate (nm/min) Si Etch Rate SiO2 Etch Rate (nm/min) Ox:Si Selectivity Ox:PR Selectivity Dense (0.6um line/ 1.4um space)/Iso ER 86 27 176 6.5185 2.0585 0.733

89o 0.90mm 0.66mm 0.98mm Cross section SEM image: Etching Time: 5min Patterned Oxide wafer: SCS wafer with 1mm thermal oxide, patterned with 1.6mm 3612 photoresist and resolution mask pattern. Comments: Micro loading effect is observed. The etch rate matches the large area measurement while the dense area rate is lower. The etch rate for 0.6um line /1.4um space is ~27% lower than the open area measurement. The side wall is smooth and vertical. 0.66mm 0.98mm 0.90mm 89o

Dense (0.6um line/ 1.4um space)/Iso ER Pt-Ox Recipe 2 Recipe: 1400W ICP/ 100W BP/ 45 CHF3/ 2 O2/ 5mT/ 4T He/ 10C Electrode/ 70C liner 90C Spool and 90C lid temp Wafers: Silicon wafer Single crystal silicon wafer with 1.6mm 3612 photoresist and patterned with resolution mask. Oxide wafer 1mm thermal SiO2 with 1.6mm 3612 photoresist and patterned with resolution mask. Procedure: Both patterned Silicon wafers and patterned Oxide wafers are etched using the above recipe. For Silicon wafer, PR thickness is measured before and after etch using NanoSpec for getting PR etch rate. PR is then stripped and Si step height is measured for getting Si etch rate. For Oxide wafer, Oxide thickness are measured pre and post etch in NanoSpec for getting Oxide etch rate. Results: PR Etch Rate (nm/min) Si Etch Rate SiO2 Etch Rate (nm/min) Ox:Si Selectivity Ox:PR Selectivity Dense (0.6um line/ 1.4um space)/Iso ER 259 201 474 2.3641 1.8301 0.783

87-88o 1.1mm 1.4mm 0.6mm 0.98mm 0.72mm 0.92mm Cross section SEM image: Etching Time: 2min Patterned Oxide wafer: SCS wafer with 1mm thermal oxide, patterned with 1.6mm 3612 photoresist and resolution mask pattern. Comments: Micro loading is observed. The etch rate matches the large area measurement while the dense area rate is ~22% lower. Slight micro trenching at the bottom. 1.1mm 0.98mm 0.6mm 1.4mm 0.72mm 0.92mm 87-88o

Dense (0.6um line/ 1.4um space)/Iso ER Pt-Ox Recipe 3 Recipe: 1400W ICP/ 150W BP/ 10 Ar/ 40 CHF3/ 10 C4F8/ 7mT/ 4T He/ 10C Electrode/ 70C liner 90C Spool and 90C lid temp Wafers: Silicon wafer Single crystal silicon wafer with 1.6mm 3612 photoresist and patterned with resolution mask. Oxide wafer 1mm thermal SiO2 with 1.6mm 3612 photoresist and patterned with resolution mask. Procedure: Both patterned Silicon wafers and patterned Oxide wafers are etched using the above recipe. For Silicon wafer, PR thickness is measured before and after etch using NanoSpec for getting PR etch rate. PR is then stripped and Si step height is measured for getting Si etch rate. For Oxide wafer, Oxide thickness are measured pre and post etch in NanoSpec for getting Oxide etch rate. Results: PR Etch Rate (nm/min) Si Etch Rate SiO2 Etch Rate (nm/min) Ox:Si Selectivity Ox:PR Selectivity Dense (0.6um line/ 1.4um space)/Iso ER 279 172 562 3.2674 2.0143 0.812

0.95mm 0.91mm 0.98mm 1.4mm 0.6mm 86o 89o Cross section SEM image: Etching Time: 2min Patterned Oxide wafer: SCS wafer with 1mm thermal oxide, patterned with 1.6mm 3612 photoresist and resolution mask pattern. Comments: Micro loading effect is observed. The etch rate matches the large area measurement while the dense area rate is ~19% lower. Slight micro trenching at the bottom. 0.95mm 0.91mm 0.98mm 1.4mm 0.6mm 86o 89o

Dense (0.6um line/ 1.4um space)/Iso ER Summary Comparison of the 3 recipes: Recipe Description PR Etch Rate (nm/min) Si Etch Rate SiO2 Etch Rate (nm/min) Ox:Si Selectivity Ox:PR Selectivity Dense (0.6um line/ 1.4um space)/Iso ER #1 600W ICP/ 50W BP/ 45 CHF3/ 2 O2/ 5mT/ 4T He/ 10C Electrode/ 70C liner 90C Spool and 90C lid temp 86 27 176 6.5185 2.0585 0.733 #2 1400W ICP/ 100W BP/ 45 CHF3/ 2 O2/ 5mT/ 4T He/ 10C Electrode/ 70C liner 90C Spool and 90C lid temp 259 201 474 2.3641 1.8301 0.783 #3 1400W ICP/ 150W BP/ 10 Ar/ 40 CHF3/ 10 C4F8/ 7mT/ 4T He/ 10C Electrode/ 70C liner 90C Spool and 90C lid 279 172 562 3.2674 2.0143 0.812 All the three recipes have microloading effect with dense areas etching ~20-25% slower than the isolated areas. Recipe 3 (C4F8 based process as opposed to conventional CHF3 based one) offers lower microloading, higher etch rate with similar selectivity. Profiles are acceptable but can be optimized further. Recipe optimization is required to minimize microloading while improving selectivity and wall angle.