Turkey’s First Chip Factory: AB MicroNano

Slides:



Advertisements
Similar presentations
THE LIGHT EMITTING DIODE
Advertisements

Shaping the color Optical property of photonic crystals Shine.
ECE 6466 “IC Engineering” Dr. Wanda Wosik
European Cooperation in the field of Scientific and Technical Research COST is supported by the EU RTD Framework Programme ESF provides the COST Office.
Laser etching of GaN Jonathan Winterstein Dr. Tim Sands, Advisor.
Nanoscale structures in Integrated Circuits By Edward Mulimba.
Photonic Bandgap Structures By Akshay V. Hegde Graduate Student Dept. of Electrical Engineering Course: Optical Communications Instructor: Dr. Pao-Lo Liu.
1 Properties of GaN Films Grown by Atomic Layer Deposition Using Low-temperature III-nitride Interlayers J. R. Gong Department of Materials Science and.
Characterization of Detectors NEP= noise equivalent power = noise current (A/  Hz)/Radiant sensitivity (A/W) D = detectivity =  area/NEP IR cut-off maximum.
Lasers and Optics By Adam Abawi. Lasers vs. Light A laser differs from other sources of light in that it emits light in a narrow straight line A laser.
Fiber Optic Light Sources
By: Garett henriksen 5/4/2015
MSE-630 Gallium Arsenide Semiconductors. MSE-630 Overview Compound Semiconductor Materials Interest in GaAs Physical Properties Processing Methods Applications.
ECE685 Nanoelectronics – Semiconductor Devices Lecture given by Qiliang Li.
ME381R Lecture 1 Overview of Microscale Thermal Fluid Sciences and Applications Dr. Li Shi Department of Mechanical Engineering The University of Texas.
Nitride Materials and Devices Project
SARAN THAMPY D SARAN THAMPY D S7 CSE S7 CSE ROLL NO 17 ROLL NO 17 Optical computing.
Why Free Space Optics? What are Free Space Optics? Application to American University.
1. Crystal Properties and Growth of Semiconductors
Gallium Nitride
High Electron Mobility Transistors (HEMT)
Lecture 5.0 Properties of Semiconductors. Importance to Silicon Chips Size of devices –Doping thickness/size –Depletion Zone Size –Electron Tunneling.
Page 1 Band Edge Electroluminescence from N + -Implanted Bulk ZnO Hung-Ta Wang 1, Fan Ren 1, Byoung S. Kang 1, Jau-Jiun Chen 1, Travis Anderson 1, Soohwan.
2.6 Moore’s Law U2C6.
“POLYMER LIGHT EMITTING DIODES (PLEDs) ”
Course Overview ECE/ChE 4752: Microelectronics Processing Laboratory Gary S. May January 8, 2004.
History of Integrated Circuits  In 1961 the first commercially available integrated circuits came from the Fairchild Semiconductor Corporation.  The.
©Syarifah Norfaezah 06/07 CHAPTER 1: INTRODUCTION Semiconductor Devices.
Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Class: ECE 6466 “IC Engineering”
Importance of Materials Processing  All electronic devices & systems are made of materials in various combinations  Raw materials are far from the final.
Quantum Dot Led by Ignacio Aguilar. Introduction Quantum dots are nanoscale semiconductor particles that possess optical properties. Their emission color.
High Efficiency Power Converters Using Gallium Nitride Transistors Marl Nakmali Mentors: Dr. Leon Tolbert Yutian Cui.
Heterostructures & Optoelectronic Devices
Semiconductor Industry Milestones
Moore’s Law and Its Future Mark Clements. 15/02/2007EADS 2 This Week – Moore’s Law History of Transistors and circuits The Integrated circuit manufacturing.
1 Materials Beyond Silicon Materials Beyond Silicon By Uma Aghoram.
EE 4611 INTRODUCTION, 13 January 2016 Semiconductor Industry Milestones Very pure silicon and germanium were manufactured PN junction diodes.
Gallium Nitride Research & Development Rakesh Sohal
Computer chip -Microprocessor COMPARISON OF PENTODE AND TRANSISTOR CHARACTERISITCS PENTODE BIPOLAR TRANSISTOR.
Government Engineering College Bharuch Metal Oxide Semiconductor Field Effect Transistors{MOSFET} Prepared by- RAHISH PATEL PIYUSH KUMAR SINGH
Intrinsic. N-Type P-Type The Diode and PN Junction.
Onoprienko N. E-71. LED or light emitting diode - a semiconductor device with a pn junction created by the optical radiation by passing electric current.
P RESENTATION ON MONOLITHIC MICROWAVE INTEGRATED CIRCUITS PASSIVE COMPONENTS SUBMITTED BY:- AJAY KAUSHIK(088/ECE/09 ) NAMAN KUMAR(082/ECE/09 )
MOLETRONICS An Invisible technology Amit Dwivedi Ec 3rd Year
© 2016 Global Market Insights, Inc. USA. All Rights Reserved Fuel Cell Market size worth $25.5bn by 2024 Power Electronics Market -
• Very pure silicon and germanium were manufactured
PCIM Europe 2016 Power Conversion and Intelligent Motion
Chapter 9. Optoelectronic device
Graphene Based Transistors-Theory and Operation; Development State
PN-junction diodes: Applications
High Temperature Devices Based Upon Silicon Carbide
UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM
Conduction of Electricity in Solids
OPTICAL SOURCE : Light Emitting Diodes (LEDs)
Government engineering college ramgarh
SUN SET TO SUN RISE LIGHTING SWITCH (EVENING ON TO MORNING OFF)
EE 4611 INTRODUCTION 21 January 2015 Semiconductor Industry Milestones
Newspapers, magazines, and blogs (pop science)
SEMICONDUCTORS. ELECTRONICS: The term electronics is originated from the word Electron. It was first applied to the study of electron movement and its.
INTRO TO TDM AND BUM TDM – Top Down Manufacturing
“Transistors”.
EECS143 Microfabrication Technology
Annual Meeting of Shareholders
INTRO TO TDM AND BUM TDM – Top Down Manufacturing
Hardware & Processor Pioneers
Semiconductor Industry:
What is Digital Information?
Fiber Optic Transmission
• Very pure silicon and germanium were manufactured
Conduction of Electricity in Solids
Presentation transcript:

Turkey’s First Chip Factory: AB MicroNano GE 301 – Science Technology & Society Turkey’s First Chip Factory: AB MicroNano

Aselsan/Bilkent MicroNano $30 billion investment One of 5 factories that can do mass production Production started in 2016 Defense, Space and Communication Industries

Production Lines: 5G cellular networks Spacecraft circuits Power Electronics Electronic Warfare

Timeline: Semiconductor History 1947 - Transistor Invented at Bell Labs 1957 - Silicon based IC fabrication began (Fairchild Semiconductor Co.) 1964 – 1st Commercial Metal-Ox-Semiconductor (MOS) IC Introduced 1993 – 1st GaN Transistors (GaN MESFET) 2010 - New method for Creating GaN Crystals (enhance-mode trans) 2014 - GaN chip production cost falls below Silicon based chips 2016 - Google establishes subsidiary for GaN based driverless cars 2015 - AB MicroNano founded in Turkey

What is GaN? Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency- doubling.

Why GaN Semiconductors? Energy Efficient Power Electronics High speed Processes Reduce physical dimensions Durability Space radiation Heat Physical Stress

Turkey’s First Chip Factory What are the socio-technical factors that lead to a paradigm shift in scientific and industrial development of semiconductors? Turkey’s First Chip Factory

Research Approach Research Done STS Theories Used History & Technological Momentum of Silicon Semiconductors GaN Semiconductor Uses & Market Interview with Prof. Dr. Ekmel Özbay - Director of AB MicroNano Technological Momentum Paradigm Shift Actor Network Theory Moore’s Law

Key points: Interview GaN is already used in the industry. LEDs Car collision Prevention Systems (Expensive, 60 GHz processing) Power Transmission Networks Physical Advantages over Silicon: Efficiency over 95 % (Silicon: 80 %) Durable in extreme conditions Smaller chip size Government Restrictions: Restricted importing. Cannot export products using GaN chips. No missile production over range of 150 km. Cannot resell, reverse engineer, improve the product.

Key points Cont. Comments on Practical Use: Other notes: All sorts of Power Electronics, removes transformers 5G network currently being developed Radar systems being built for Aselsan Energy loss in transmission minimized Other notes: Supplements silicon based circuits IP slows down the momentum of the development, but we can secure the edge in industry. GaN is not good in some areas.

Key points: GaN Market Locally produced chips creates an entire market for GaN based products. Market includes driverless cars, military technology and mobile devices. Expected to boost the economy in the near future. Products can be exported to improve foreign exchange.

Conclusion

¿Questions & Comments?