Chapter 2 MOS Transistors.

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Presentation transcript:

Chapter 2 MOS Transistors

2.2 Structure and operation of the MOS Transistor

2.2 Structure and Operation of the MOS Transistor

2.2 Structure and Operation of the MOS Transistor

2.2 Structure and Operation of the MOS Transistor

2.3 Threshold voltage of the MOS Transistor

2.3 Threshold Voltage of the MOS Transistor

2.3 Threshold Voltage of the MOS Transistor Intrinsic carrier concentration : Mass action law : Difference between intrinsic and actual Fermi level : p-type material case : Gate oxide capacitance : (2.1) (2.2) (2.3a) (2.3b) (2.4) (2.5)

2.3 Threshold Voltage of the MOS Transistor

2.3 Threshold Voltage of the MOS Transistor

2.3 Threshold Voltage of the MOS Transistor

2.3 MOS Structure 2.3.4 The Depletion Approximation

2.3 MOS Structure 2.3.4 The Depletion Approximation 2.47 2.71 2.72 2.73 2.74 2.75 2.76 2.77 2.78 2.79 2.80 2.81 2.82 2.83

2.3 MOS Structure 2.3.4 The Depletion Approximation

2.3 MOS Structure 2.3.4 The Depletion Approximation 2.84 2.85 2.86 2.87 2.88 2.89 2.90

2.3 MOS Structure 2.3.4 The Depletion Approximation 2.91 2.92 2.93 2.94

Change of Quasi-Fermi Potentials across the Space-Charge Region

Modern VLSI Devices

Modern VLSI Devices

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

2.3 Threshold Voltage of the MOS Transistor Silicon-gate device work function difference : Flat-band condition : Depletion layer(p-type) thickness : Bulk charge : (Inversion) (Body bias) (2.6) (2.7) (2.8) (2.9a) (2.9b)

2.3 Threshold Voltage of the MOS Transistor

(2.10) (2.11) (2.12) 2.3 Threshold Voltage of the MOS Transistor Body-effect coefficient(body factor)Flat-band condition : (2.10) (2.11) (2.12)

2.4 Effect of Gate-Body Voltage on Surface Condition 2.4.26

2.3 Threshold Voltage of the MOS Transistor

2.4 First-Order current-voltage characteristics

2.4 First-Order Current-Voltage Characteristics

(2.13) (2.14) (2.15) 2.4 First-Order Current-Voltage Characteristics Charge area density at the point y : Drain-source current : (Carrier velocity : ) (2.13) (2.14) (2.15)

(2.16) (2.17a) (2.17b) 2.4 First-Order Current-Voltage Characteristics Process transconductance parameter : Drain-source current : (Device transconductance parameter : ) (2.16) (2.17a) (2.17b)

2.4 First-Order Current-Voltage Characteristics

(2.18) (2.19) (2.20) 2.4 First-Order Current-Voltage Characteristics Saturation voltage : Drain-source current (saturation) : (Shortening the electrically effective value of L) (2.18) (2.19) (2.20)

2.4 First-Order Current-Voltage Characteristics

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2.5 Derivation of Velocity-Saturated current equation

2.5.1 Effect of High Fields

2.5.1 Effect of High Fields (2.21)

2.5.1 Effect of High Fields

(2.22) (2.23a) (2.23b) (2.24) 2.5.1 Effect of High Fields Critical field values : Carrier velocity : Consider boundary condition : (2.22) (2.23a) (2.23b) (2.24)

(2.25) 2.5.2 Current Equations for Velocity-Saturated Devices Linear region operation (2.25)

2.5.2 Current Equations for Velocity-Saturated Devices Saturation region operation Limiting cases : ( ) ( ) (2.26) (2.27) (2.28) (2.29)

2.5.2 Current Equations for Velocity-Saturated Devices

5.2 Carrier Velocity Saturation 5.2.16 5.2.17

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2.5.2 Current Equations for Velocity-Saturated Devices 1X devices

2.5.2 Current Equations for Velocity-Saturated Devices Equations for deep submicron devices Saturation region Channel length modulation Linear region

2.6 Alpha-power law model

2.6 Alpha-Power Law Model

2.6 Alpha-Power Law Model (2.30a) (2.30b) (2.31)

2.7 Subthreshold conduction

2.7 Subthreshold Conduction

2.5.1 Effect of High Fields

(2.32) (2.33) 2.7 Subthreshold Conduction Current equation: Slope factor : (2.32) (2.33)

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

2.8 Capacitances of the MOS Transistor

2.8 Capacitances of the MOS Transistor

(2.34) 2.8.1 Thin-Oxide Capacitance Total capacitance of the thin-oxide : Examples : i) technology, oxide thickness ii) process, with (2.34)

2.8.1 Thin-Oxide Capacitance

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.1 7.3.2

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.3 7.3.4 7.3.5

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.1 Complete Description of Intrinsic Capacitance Effects 8.2.3 8.2.4 8.2.5 8.2.6 8.2.7 8.2.8

8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.1 Complete Description of Intrinsic Capacitance Effects 8.2.9 8.2.10 8.2.11 8.2.12

8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.2 Small-Signal Equivalent Circuit Topologies

8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.2 Small-Signal Equivalent Circuit Topologies 8.2.17 8.2.18 8.2.19a 8.2.19b 8.2.19c 8.2.20

8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.2 Small-Signal Equivalent Circuit Topologies

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.6

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.7 7.3.8 7.3.9 7.3.10

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.11 7.3.12 7.3.13 7.3.14 7.3.15 7.3.16 7.3.17 7.3.18

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.19 7.3.20

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part Nonsaturation with VDS = 0 (h=1) Saturation (h=0) 7.3.21 7.3.22 7.3.25 7.3.26 7.3.27 7.3.28 7.3.29 7.3.23, 24

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part Click Intrinsic+Extrinsic (7.4)

2.8.1 Thin-Oxide Capacitance

(2.35) (2.36) (2.37) 2.8.2 pn Junction Capacitance Current-voltage characteristic : Built-in junction potential : (2.35) (2.36) (2.37)

2.8.2 pn Junction Capacitance

(2.38) (2.39) (2.40) 2.8.2 pn Junction Capacitance Zero-bias junction capacitance : For of the NMOS device : (2.38) (2.39) (2.40)

2.8.2 pn Junction Capacitance

(2.41) (2.42) 2.8.2 pn Junction Capacitance Total junction capacitance : Simplification : ( , ) (2.41) (2.42)

2.8.2 pn Junction Capacitance Equivalent voltage-independent capacitance

2.8.2 pn Junction Capacitance (2.43) (2.44) (2.45)

2.8.3 Overlap Capacitance

2.8.3 Overlap Capacitance (2.46) (2.47)

2.9 summary

2.9 Summary

2.9 Summary

2.9 Summary

2.9 Summary

2.9 Summary

2.9 Summary

2.9 Summary