UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM S o u t h e r n M e t h o d i s t U n i v e r s i t y UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM EE 3311 Solid State Devices 1. students fabricate and test Silicon (Si) p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) EE 5312 Semiconductor Processing Laboratory 1. students fabricate and test Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) and Gallium Arsenide (GaAs) High Electron Mobility Transistors (HEMTs) 2. InP and GaAs based structures grown by Molecular Beam Epitaxy (MBE) at IntelliEPI, Richardson, TX Courses made possible in part by: Hutson Industries Photodigm

Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Packaged MOSFET device Wafer Level MOSFET Device

Silicon MOSFET Test Results

GaAs High Electron Mobility Transistor (HEMT) Wafer level HEMT device HEMT structure grown by MBE at IntelliEPI Source Drain Gate HEMT device under test

GaAs HEMT Test Results

InGaAs/InP Heterojunction Bipolar Transistor HBT structure grown by MBE at IntelliEpi Wafer level HBT device Base Emitter Collector

InP HBT Test Results Wafer level HBTs with various collector, base and emitter dimensions

Semiconductor Lasers AlGaInP (630 to 680 nm red emission) InGaAs/AlGaAs/GaAs (920 to 1100 nm emission) AlGaInAs and InGaAsP (1200 to 1600 nm emission) AlGaInP structure Refractive Index and Near Field Bar Level Red Lasers

450 nm AlGaN Blue Semiconductor Laser Blue Laser Epitaxial Structure Refractive Index and Near Field Wafer level Blue Laser Device N-contact P-contact

1064 nm Ridge Guide Laser 1064 nm Laser Structure Refractive Index and Near Field 1064nm Ridge Guide Semiconductor Laser

Band Gap Energy (Eg) vs Lattice Constant (ao) for Different Semiconductor Materials Eg = Ephoton = hc/, or  = hc/ Eg, or  (m) = 1.24/ Eg (eV) where h is Planck’s constant, c is the speed of light

MBE Technology for III-V Compound Semiconductor MBE System Substrate Platen Materials Capability Substrate: GaAs, & InP Group III: Al, Ga, & In Group V: As, P, Sb, & N N-type Dopant: Si P-type Dopant: Be, & C (from CBr4) Molecular Beam Fluxes Deposition Source Materials UHV Growth Chamber Peanut butter and Jelly analogy. Molecular Beam Epitaxy (MBE) Impinging molecular/atomic beam fluxes are the precursors for the epitaxy growth process Epitaxy growth process maintain lattice registration along the growth direction MBE process grows each atomic monolayer at a time Ultra high vacuum growth chamber: 10-10 Torr base pressure Growth of customized active device/structure on top of crystalline substrate

IntelliEPI’s MBE Facility in Richardson, Texas 7 MBE reactors: One Riber 7000 (7x6”) Three Riber 6000 (4x6”) Three Riber 49 (4x4”) First Riber7000 installation in III-V industry Proprietary in-situ real-time growth monitoring technology Dedicated operation and cleaning facilities designed to handle phosphorous for all MBE systems

Communications Technology Evolution III-V semiconductors from elements of group III and group V columns of Periodic Table InP and GaAs are key enabling technology for all communications systems Wireless, telecomm, satellite, fiber optics, and other high frequency systems such as collision warning radar system all require faster semiconductors like GaAs and InP InP outperforms all existing RF/telecomm technology in terms of speed Wireless from 2GHz to 300 GHz with 2x breakdown voltage vs. SiGe, high gain, better efficiency Current fastest flip-flop speed is 150 GHz (from IntelliEPI/Vitesse) vs. 96GHz of SiGe

Competing Building Blocks - Fiber optic network example Internet is the main driving force data, speed, bandwidth, wireless Both long-haul and local networks shift to fiber optic networks Current 2.5Gbps networks are being replaced by 10Gbps (OC192) in 2006. GaAs is the electronics building block 40Gbps network will be the 2nd largest in 2006 and electronics will be dominated by InP Silicon will be dominant for market adoption in the “late majority” and “laggard” phases Fiber optics industry major recovery underway (2006)

High Speed Technology Race InP Heterojunction Bi-Polar Transistor (HBT) W. Hafez, et al, IEEE Elect. Dev. Lett., Vol 24, #7, pg 346, July 2003. 600 Sources: IntelliEPI and N. Pan, UCLA.