Electronics The Fifteenth and Sixteenth Lectures eleventh week 28/ 2/ 1438 هـ - 2/ 3/ 1438 هـ أ / سمر السلمي

Outline for today Field Effect Transistor Junction field-effect transistor (JFET) I – V Characteristic of JFET JFET as Amplifier & Switch Derivation of drain current & equations and calculations of JFET Difference between field-effect transistor [FET] & Bipolar junction transistor [BJT] Metal–Oxide–Semiconductor field-effect transistor (MOSFET) Structure, modes , work principle & circuit symbol What happens inside MOSFET I – V Characteristic of MOSFET Equations and calculations of MOSFET MOSFET as Switch MOSFET عمله كمفتاح معادلات وحسابات الترانزستور MOSFET حل الواجب الثالث

Time of Periodic Exams The Forth homework The Second periodic exam in / 3 / 1438 هـ 13- 14, Please everyone attend in her group The Forth homework I put the forth homework in my website in the university homework Due Tuesday 7 / 3/ 1438 H in my mailbox in Faculty of Physics Department , I will not accept any homework after that , but if you could not come to university you should sent it to me by email in the same day

Junction field-effect transistor (JFET) I – V Characteristic of JFET (n-channel) We notice as BJT that here also we has number of regions in characteristic curves. The important one is Saturation Region or Active Region which begin at the point that the curve cut with pinch – off curve. When there are no drain current moving in circuit. We notice that before entering Saturation Region, there is proportional relation between drain current ID and drain voltage VDS which follow ohm relation V=IR where called Ohmic Region. In this region, depletion region is small and JFET works as control of channel resistivity by change voltage. The final region is Cut-off Region or pinch-off which JFET works as open switch when channel resistivity has maxim value

Junction field-effect transistor (JFET) I – V Characteristic of JFET JFET for p-channel has the same characteristic curves of n-channel. However, the different in applied voltage VGS between gate and channel. Because we want reverse bias, n-channel has negative voltage of VGS and p-channel has positive voltage of VGS duo to difference of contact circuit and battery in two n- JFET & p- JFET وذلك بسبب توصيل الدائرة المختلف لترانزستور n- JFET عن - JFET p n-channel p-channel

JFET as Switch Junction field-effect transistor (JFET) JFET as Amplifier The small change of gate voltage VG will obviously change in current ID between source and drain. Like this amplification occurs . The circuit properties and amplification of JFET at source common similar to circuit properties of BJT at emitter common. However, the benefit of using JFET amplifier than BJT amplifier is that in JFET input resistance is higher and gate controls with its value. JFET as Switch Previously, we study how gate voltage controls with drain current passing. This what makes JFET work as switch by changing cross-section area of channel by rising or reducing gate voltage, therefore, rising or reducing depletion region of reverse voltage at channel.

Junction field-effect transistor (JFET) Derivation of drain current to JFET In diode, we find width of depletion region In diode p+n the gate impurities is higher, thus to obtain At pinch off voltage By divide two equation Thus, half width of channel

Junction field-effect transistor (JFET) Derivation of drain current to JFET We want to calculate drain current we defined density & channel area from figure Thus, we obtain With, simplify the equation and integration We find the limits of integration from figure

Junction field-effect transistor (JFET) Derivation of drain current to JFET Final drain current represents by following relation At saturated state Thus, we obtain For n- JFET drain saturated current is negative , also are negatives. However, is positive

Junction field-effect transistor (JFET) Equations and calculations of JFET From Previous equations and characteristic curve, we will find another drain current relation of JFET (without derivation) Where is maximum value of drain saturated current when VGS = 0 The gain for JFET is where gm is mutual transconductance. Its unit is Ampere per Volt which is Siemens (S) = (A)/(V)

Difference between field-effect transistor [FET] & Bipolar junction transistor [BJT]   BJT FET Control method Input current (IB or IE) input voltage (VGS) Bias type of input circuit at active mode forward bias in base (B) & emitter (E) junction reverse bias in source (S) & gate (G) junction The gain Example voltage gain Example mutual transconductance Noise level high Very low Dependence in terms of carriers and type impurities It depends on the majority and minority carriers of two types n-type and p-type It depends on the majority carriers of one type n-type or p-type Name Bipolar Unipolar Dependence on transistor work The minority carriers injected across the forward voltage in junction Controlling with depletion region width in the channel by reverse bias Current on parts Current moves between emitter and base and collector (3 parts) Current moves between source and drain (2 parts) Input resistance Lower duo to forward bias higher duo to reverse bias Thermal stability less best

Difference between field-effect transistor [FET] & Bipolar junction transistor [BJT] =   BJT FET Switch work (see figure) Slower (where it works as flow of water between the plateau) Faster (where it works as valve control of operation of water flows) Amplification method (in high frequencies in circuits) carriers moves from emitter to collector across base. Thus, it takes more time (unsuitable in high frequency circuits) signal on gate adjust drain current to generated a signal in drain circuit. Thus, it not takes more time (suitable in high frequency circuits)

Field Effect Transistor When we study BJT and JFET, we notice that their structure depend on semiconductor of two junctions pn & np contacting in addition of metal and oxide in manufacture but not depend on them. However, there are another transistor as MESFET & MISFET & MOSFET depend on structure of MES contact metal and semiconductor or enter between them insulator as MIS contact or oxide as MOS Therefore, to study MOSFET, we should review MOS contact that we study in second chapter

Structure metal–oxide–semiconductor field-effect transistor (MOSFET) (n-channel of enhancement mode) notice as JFET: source (S), drain (D) & gates (G). also metal contact with them. source & drain contains of extrinsic semiconductor n-type has more impurities oxide layer (SiO2) between metal & semiconductor there is semiconductor substrate of p-type =

metal–oxide–semiconductor field-effect transistor (MOSFET) Modes MOSFET (Structure & work principle) Duo to different of modes or bias of MOS contact 1- enhancement -mode : Its structure explain in previous slide. The work principle of this mode depend on inversion layer between source & drain . 2- depletion - mode Its structure similar to previous mode but there cannel between source & drain of the same semiconductor type of source & drain. This channel has not have more impurities. The work principle of this mode depend on depletion layer

metal–oxide–semiconductor field-effect transistor (MOSFET) MOSFET Modes (circuit symbol) its circuit symbol similar to JFET from source & drain but the different is semiconductor substrate also the place of the arrow: its not in gate but in substrate. Finally, there are symbol difference between two modes. At depletion mode substrate connected as one line.

metal–oxide–semiconductor field-effect transistor (MOSFET) What happens inside MOSFET (n-channel of enhancement mode) battery contact with circuit similar to JFET . One contacts with circle between source & drain VDS, the other contacts ,as voltage bias, gate with substrate & source VGS .When positive voltage applied at gate above threshold Voltage [VG > VT ]. Inversion layer of electrons form below gate, which called n-channel, contacts between source & drain which have n-type and more impurities. Thus source & drain can support with more electron to inversion layer and electronic current moves from source to drain but real current moves opposite direction. Increasing bias voltage on gate makes more carriers flow in inversion layer. Thus, current increase between source & drain. Because of this, it called enhancement mode

What happens inside MOSFET (n-channel of enhancement mode) metal–oxide–semiconductor field-effect transistor (MOSFET) What happens inside MOSFET (n-channel of enhancement mode) Since there are n-type at source, drain & inversion layer but p-type at substrate, there will be depletion region between n-type & p-type. While source contacts with grounded, and voltage difference between gate & channel, and having VG at end source & VG - VD at end drain, in this case drain voltage will be VD <(VG – VT) . At increasing voltage to pinch off point or saturation state start (VG – VT) = VD(sat.) . For more increasing to strong saturation state VD(strg. sat.) > (VG – VT )

metal–oxide–semiconductor field-effect transistor (MOSFET) What happens inside MOSFET (n-channel of depletion mode) Almost similar to previous mode with some differences. Because of conduction channel down gate, without voltage applied meaning electronic current not passing between source & drain in channel. However, when negative bias voltage applied at gate less than threshold voltage, the contact between source & drain cut off. As in previous mode, at increasing voltage to pinch off point than saturation state

metal–oxide–semiconductor field-effect transistor (MOSFET) I – V Characteristic of MOSFET (n- channel of enhancement mode) Almost similar to JFET characteristic curves, there is Ohmic Region duo to applying Ohm Relation V=IR . After pinch off curve or points, there is Saturation Region and here drain saturated current almost constant with drain saturated voltage. Final region is Cut off Region

metal–oxide–semiconductor field-effect transistor (MOSFET) I – V Characteristic of MOSFET (n-channel of enhancement mode) Details of the operation in the first two regions Saturation Region pinch off piont Ohmic Region

metal–oxide–semiconductor field-effect transistor (MOSFET) I – V Characteristic of MOSFET (n-channel of depletion mode) similar to JFET characteristic curves of enhancement mode of three regions : Ohmic Region, Saturation Region & Cut off Region. Also, pinch off curve or points. The different is the change of gate voltage value (why?) =

metal–oxide–semiconductor field-effect transistor (MOSFET) I – V Characteristic of MOSFET

metal–oxide–semiconductor field-effect transistor (MOSFET) Equations and calculations of MOSFET We find drain current at Saturated of MOSFET (without derivation) (n- channel of enhancement mode) Where is the surface mobility of electrons (for channel) & Cox capacity of oxide layer & z channel thickness & L channel length. The gain of MOSFET similar to JFET where gm is mutual transconductance. Its unit is Ampere per Volt which is Siemens (S) = (A)/(V)

metal–oxide–semiconductor field-effect transistor (MOSFET) MOSFET as Switch Previously, we knew what happens inside MOSFET in two modes. From those information, MOSFET is close switch Fully-ON (electronic current passing between source & drain) when voltage or electronic field not applied in depletion mode (before battery contact with circuit) opposite to enhancement mode when voltage or electronic field applied (at battery contact with circuit) MOSFET is open switch Fully-OFF (electronic current not passing between source & drain) when voltage or electronic field applied in depletion mode (at battery contact with circuit) opposite to enhancement mode when voltage or electronic field not applied (before battery contact with circuit) In addition, working switch effect by Saturation & Cut off Region & pinch off points [we explained it previously in what happened inside MOSFET ] Also, this transistor works as Amplifier similar to JFET