Other Transistor Topologies

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

FET ( Field Effect Transistor)

Transistors These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the.

Physics of Bipolar Junction Transistor Section

Semiconductor basics 1. Vacuum tubes  Diode  Triode 2. Semiconductors  Diode  Transistors Bipolar Bipolar Field Effect Field Effect 3. What’s next?

MOSFETs Monday 19 th September. MOSFETs Monday 19 th September In this presentation we will look at the following: State the main differences between.

Metal Semiconductor Field Effect Transistors

The metal-oxide field-effect transistor (MOSFET)

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Transistors Three-terminal devices with three doped silicon regions and two P-N junctions versus a diode with two doped regions and one P-N junction Two.

Field-Effect Transistor

Module 2 Bipolar Junction Transistor. Learning Outcomes 1.The 3 terminals or regions of a BJT. 2.Construction and symbol of NPN and PNP types 3.Low power.

Chapter 6 Field Effect Transistors 6.1 Transistor Operation 6.2 The Junction FET 6.3 The Metal-Semiconductor FET 6.4 The Metal-Insulator-Semiconductor.

Chapter 5: Field Effect Transistor

BJTs. Transistor The transistor is the main building block “element” of electronics. A transistor is a semiconductor device used to amplify and switch.

Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.

Field Effect Transistors

Introduction to Transistors

TRANSISTOR - Introduction BIPOLAR JUNCTION TRANSISTOR (BJT)

1 Other Transistor Topologies 30 March and 1 April 2015 The two gate terminals are tied together to form single gate connection; the source terminal is.

Introduction Semiconductors are materials whose electrical properties lie between Conductors and Insulators. Ex : Silicon and Germanium.

course Name: Semiconductors

COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 9.

BJT transistors FET ( Field Effect Transistor) 1. Unipolar device i. e. operation depends on only one type of charge carriers (h or e) 2. Voltage controlled.

Regions of a Transistor A Bipolar Junction Transistor is a three terminal device containing 3 regions: Emitter, Base and Collector.

The Devices: MOS Transistor

Bipolar Junction Transistor (BJT) Construction

J-FET (Junction Field Effect Transistor)

Chapter 6 The Field Effect Transistor

Electronics The Sixteenth and Seventh Lectures

LTFY – Physics and Engineering

Different Types of Transistors and Their Functions

DEPARTMENT OF COMPUTER SCIENCE

MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.

Field Effect Transistors: Operation, Circuit Models, and Applications

MOS Field-Effect Transistors (MOSFETs)

Electronics The Fifteenth and Sixteenth Lectures

EMT 112 / 4 ANALOGUE ELECTRONICS

Recall Last Lecture Common collector Voltage gain and Current gain

DMT 241 – Introduction to IC Layout

Bipolar Junction Transistors (BJTs)

Metal Semiconductor Field Effect Transistors

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Intro to Semiconductors and p-n junction devices

ELECTRONICS AND COMMUNICATION

Bipolar Junction Transistor (BJT) Chapter and 25 March 2016

Transistor Characteristics

Electronics Fundamentals

Basics of Electronics Conductors: have low resistance which allows electrical current flow easily. Insulators: have high resistance which suppresses electrical.

EMT 182 Analog Electronics I

TRANSISTOR - Introduction

LECTURE # 8 FIELD EFFECT TRANSISTOR (FET)

Lecture 4 OUTLINE Bipolar Junction Transistor (BJT)

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Operation of BJT in Saturation

Lecture #15 OUTLINE Diode analysis and applications continued

Lecture 20 OUTLINE The MOSFET (cont’d)

Semiconductor Devices (Electronics)

Chapter 4 Bipolar Junction Transistor

Lecture 20 OUTLINE The MOSFET (cont’d)

Bipolar Junction Transistor (BJT) Chapter and 17 March 2017

9 Transistor Fundamentals.

JFET Junction Field Effect Transistor.

Review & Problems.

Other Transistor Topologies

BIPOLAR JUNCTION TRANSISTOR (BJT)

Bipolar Junction Transistor (BJT) Chapter and 27 March 2019

Solid State Electronics ECE-1109

Other Transistor Topologies

Presentation transcript:

Other Transistor Topologies 17 and 20 March 2017 JFET Junction Field Effect Transistor The two gate terminals are tied together to form single gate connection; the source terminal is grounded The flow of electric charge through a PN JFET is controlled by constricting the current-carrying channel; the width of the channel is controlled by the gate voltage through varying the depletion region at the PN junction at the interface between the gate and the channel The current also depends on the electric field between source and drain 1 1

Structure of JFET N-channel JFET a long channel of n-type (N-channel) or p-type (p-channel) semiconductor. Two ohmic contacts with each at one end of the channel: the source and the drain The gate (control) terminal has doping opposite to that of the channel, so there is a PN junction at the interface between the junction and the channel. The contact from gate to outside is also ohmic. 2 2

I-V relationship of PN JFET Nonsaturation region (linear region) Saturation region I-V relationship of PN JFET 5 5

Other Features of PN JFET JFET is unipolar device since only majority carriers transport in the channel The source and drain region are interchangeable N-channel devices have greater conductivity than p-channel types, since electrons have higher mobility than holes The gate current is approximately zero since the PN junction is reverse biased Symbols of JFET (arrow represents the polarity of the PN junction) 6 6

Comparisons of Transistors BJT MOSFET JFET Structure NPN: n++p+n PNP: p++n+p n(p)-type inversion layer structure as channel from S to D Inversed biased PN junction between the gate and channel from S to D Current transport Diffusion Drift Carriers involved in current transport Bipolar: electrons and holes Unipolar NMOS: electrons PMOS: holes Unipolar: N-channel: electrons P-channel: holes Current at terminals IC=βIB= (1/α) IE (Forward active mode) IC=f(VBE, VBC) IG=0 ID=f(VGS, VDS) IG≈0 7 7

Comparisons of Transistors (Cont’d) BJT MOSFET JFET Symbols Applications Current-controlled current amplifier Switch for digital signal Discrete circuits Voltage-controlled current amplifier IC circuits MESFET can be used in higher-frequency than PN-JFET due to higher electron mobility in GaAs N-channel NPN P-channel PNP NMOS PMOS 8 8

Esaki (Tunnel Diode) is obsolete but illustrates an early application of quantum effects.

Gunn (Transferred Electron Device) Essentially Obsolete Better Approaches to Microwave Signal Generation

L IMPATT (IMPact Ionization Avalanche Transit Time Essentially Obsolete Better Approaches to Microwave Signal Generation (f=v/2L)