Simplified process flow for bonding interface characterization

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Presentation transcript:

Simplified process flow for bonding interface characterization No lithography steps

Global view Legend Wafer before dicing Color Material Highly doped P-type silicon Lowly doped P-type silicon Silicon dioxide Bonding interface

Step 1 Wafer 1 Wafer 2 Thermal oxide growth (thickness 500nm) Boron implantation and annealing (1100°C 30 min) on back side (full sheet)

Step 2 Wafer 1 Temporary bonding (on front side)

Step 3 Wafer 1 Thinning Swipe: 20µm 50µm 100µm

Step 4 Surface preparation and bonding

Step 5 Si grinding and etching

Step 6 Dicing