Chapter 2 Overview of Power Semiconductor Devices

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Presentation transcript:

Chapter 2 Overview of Power Semiconductor Devices

Diodes On and off states controlled by the power circuit

Diode Turn-Off Fast-recovery diodes have a small reverse-recovery time

Thyristors Semi-controlled device Latches ON by a gate-current pulse if forward biased Turns-off if current tries to reverse

Thyristor in a Simple Circuit For successful turn-off, reverse voltage required for an interval greater than the turn-off interval

Generic Switch Symbol Idealized switch symbol When on, current can flow only in the direction of the arrow Instantaneous switching from one state to the other Zero voltage drop in on-state Infinite voltage and current handling capabilities

Switching Characteristics (linearized) Switching Power Loss is proportional to: switching frequency turn-on and turn-off times

Bipolar Junction Transistors (BJT) Used commonly in the past Now used in specific applications Replaced by MOSFETs and IGBTs

Various Configurations of BJTs

MOSFETs Easy to control by the gate Optimal for low-voltage operation at high switching frequencies On-state resistance a concern at higher voltage ratings

Gate-Turn-Off Thyristors (GTO) Slow switching speeds Used at very high power levels Require elaborate gate control circuitry

GTO Turn-Off Need a turn-off snubber

IGBT

MCT

Comparison of Controllable Switches

Summary of Device Capabilities

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