20th IPRM, MAY 2008, Versallies-France

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Presentation transcript:

DHBT With Esaki Base Emitter Junction having a 60 nm Wide Emitter Contact 20th IPRM, 25-29 MAY 2008, Versallies-France D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, and D. Ritter Department of Electrical Engineering, Technion Israel Institute of Technology Haifa, Israel

HBT Scaling Law M. Rodwell et al, IEEE BCTM (2007)

DHBT WITH ESAKI BASE EMITTER JUNCTION 300nm 60nm B E Ielectrons Iholes

Advantages Limitations Base contact to p-type material eliminated. Emitter and base contacts can be fabricated simultaneously by in situ methods to obtain reproducibly low contact resistance (E. Lind et al. DRC 2007). Limitations Backward diode resistivity. Transistor must operate at higher current density than the Esaki tunneling valley current density. Non self aligned base metal deposition. (Cbc~1.5Cbc,scaling) Possibly larger Cbe.

Backward diode resistivity J VBE VPeak JPeak JValley

Low Vpeak is essential ! Vpeak=(EF,n+EF,p)/3 EF,p EF,n Fermi level position in n-type GaInAs determined by the Burstein- Moss shift, Martin Munoz et al., Physical Review B, Vol 63 , 2001 T.A Demassa et al.Solid-State Electron., Vol 13,1970

Cbe of Esaki junction versus conventional junction n=Je/qυe > ND Cbe~ε/LDebye LDebye~10-20 nm Conventional heterojunction InP InGaAS B. Sheinman and D. Ritter. TED 2003 EF,n Cbe~ε/L depletion n=Je/qυe < ND InGaAS InP Esaki heterojunction

Previous related work: the multi emitter approach for logic applications K. Imamura et al., Electronics Lett. Vol. 30 No. 5, 1994 A. Zaslavsky et al., EDL Vol. 18, No. 9, 1997

Layer Structure * * D. Cohen Elias et al. EDL, vol. 26, 2005

SIMS Profile Emitter cap Emitter Base Collector Concentration (cm-3) Si Pulse Si C Depth (nm)

Fabrication using 3 e-beam lithography and 2 photolithography steps Emitter & Base metal evaporation Base mesa formation 300nm 60nm B E Isolation

Gummel Plot and Common Emitter Ae=0.06X0.6 μm2 Ib,step=5μA dJKirk/dVce, * * M. Rodwell Short Course IPRM 2005

Gummel Plot and Voltage Controlled Common Emitter Ae=0.06X0.6 μm2 , Vb,step=50mV

Estimation of the backward diode resistivity Ae= 160X1600 nm2 Ae=60X600 nm2 1.5 Vpeak

Higher emitter doping is possible Si: 2∙1020(cm-3) Concentration (cm-3) Si C Depth (nm)

Conclusions DHBT with Esaki base emitter junction (NDE=1∙1020cm-3) having 60 nm wide emitter contact was fabricated. The Esaki tunneling current did not degrade the gain of the device at high current density. Low Vpeak values were found. Esaki peak current density should be increased from 1(mA/μm2) to about 50-100(mA/μm2) to achieve the scaling roadmap base contact resistance

Thank You