Modeling Radiation Damage Effects in Oxygenated Silicon Detectors

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Presentation transcript:

Modeling Radiation Damage Effects in Oxygenated Silicon Detectors M. Petasecca (1,2), G.U. Pignatel (1,2), G. Caprai (1), D. Passeri (1,2) (1) University of Perugia, via G.Duranti 93 - 06125 Perugia ITALY (2) INFN sez. Perugia, via Pascoli 10 – 06120 Perugia ITALY

OUTLINE Introduction: modeling set-up Summary of present p-type and n-type Silicon radiation damage models Results on proton irradiated FZ Oxygen Enriched Silicon (DOFZ) Conclusions

Geometrical Definition of the simulated structure Introduction Geometrical Definition of the simulated structure Sample structure: PAD detector with a Guard Ring (1μm torward the 3rd direction) <111> FZ – Substrate: n-doped (71011 cm-3) 6kΩcm p-doped (51012 cm-3) 3kΩcm Charge concentration at the silicon-oxide interface: 4 1011 cm-3 pre-irradiation 1 1012 cm-3 post-irradiation 30μm 3μm 5μm D Back contact Front contact Thickness: p-type devices D = 300µm n-type devices with different thickness: D = 50-100-300 µm

Defect Energy Levels Introduction Assignement Energy Level Conc. VO(-/0) Ec-0.17±0.01 eV 67x1011cm-3/Mrad ** V2(-/0) (neutron irradiation) Ec-0.415±0.015 eV 1.0x1010cm-3/Mrad ** E(240) V2O(-/0) (gamma irradiation) Ec-0.545 eV 0.8x109 cm-3 *** Γ - (V2O - V3 ?) (p+,e- irradiation) Ec-0.46 eV 9.6x109 cm-3 * H(160) CiOi (+/0) Ev+0.37±0.01 eV 47x1010 cm-3/Mrad ** VO, always present in DLTS spectra, important because VO+VV2O [*] CERN-LHCC-2003-058 RD50 Status Report 2003. [**] Pintilie Ioana, RESMDD’06, Florence 10-13 October 2006. [***] visible only on high resistivity Si above 15Mrad of  irradiation. [*] Pirollo et al. “Radiation damage on p-type silicon detectors” NIM A 426 (1999)

Radiation Damage Model: P-TYPE Si Level Ass. σn(cm2) σp(cm2) (cm-1) Ref. EC – 0,42eV VV(-/0) 2e-15 2e-14 1,613 [2] EC – 0,46eV VVV(-/0) 5e-15 5e-14 0,9 [1,3] EV + 0,36eV CiOi 2,5e-14 2,5e-15 [1,2,3] Note: in p-type Si the 0.46 level is not attributed to V2O but to V3 (vacancy related defects) [1] Pirollo et al. “Radiation damage on p-type silicon detectors” NIM A 426 (1999) [2] Zangenberg et al “On-line DLTS investigations of the mono and divacancy in p-type Si” NIM B 186 (2002) [3] Ahmed et al. “DLTS studies of Si detectors after 24GeV p irradiation and 1 MeV neutron irradiation” NIMA 457 (2001)

Radiation Damage Model: N-TYPE Si Level Ass. σn(cm2) σp(cm2) (cm-1) Ref. EC – 0,42eV VV(-/0) 2.2e-15 1.2e-14 13 [*] EC – 0,50eV V2O 4e-15 3.5e-14 0.08 EV + 0,36eV CiOi 2e-18 2.5e-15 1.1 [*] M.Petasecca, F.Moscatelli, D.Passeri, and G.U.Pignatel, IEEE TNS 53-5 (2006) 1-6. Non standard FZ! High Oxygen Conc. samples from SMART collaboration

Standard FZ n-type Si, 23GeV proton irradiated [WE – 7k] Neff0 = 7 x 1011 cm-3 gC*N0 =0,03 (donor removal constant) ρ = 6 kΩcm (substrate resistivity) [Oi] < 35 x 1016[cm-3] crystal orientation <111> Experimental data from Lindstrom G. et al., NIM A 466 (2001) – RD48-ROSE

Level Ass. σn(cm2) σp(cm2) (cm-1) EC – 0,42eV VV(-/0) 2e-15 1,2e-14 13 EC – 0,53eV VVO 5e-15 5e-14 0,08 EV + 0,36eV CiOi 2,5e-14 2,5e-15 1,1

DOFZ n-type Si, 23 GeV proton irradiated Oxigen rich Fz n-Type [WS – 3k] Neff0=1,5 x 1012 cm-3 gC * N0 = 0,03 (donor removal constant) ρ = 3 kΩcm (substrate resistivity) [Oi] = 1.5 x 1017[cm-3] crystal orientation <111> Ratio of acceptors Introduction rates between Standard-FZ and Oxigenated-FZ (DOFZ)

Comparison between Stand Comparison between Stand. FZ (n-type) and DOFZ Si, 23GeV proton irradiated Ec-0.53eV

Conclusions All the simulations made so far, compared with experimental data, are consistent with the following defect model scenario: V2  Ec-0.42  0.43eV ( >>1  n irrad., clusters) CiOi  Ev+0.36eV (trap for holes  CCE)  (V2O or V3 ?)  Ec-0.46eV (p,e irradiation) V2O  Ec-0.53  0.545eV (p,γ irradiation) V2O level very sensitive to initial O2 concentration ! p-type puzzle: Ec-0.46 is NOT attributed to V2O (!?!) Oxygenated p-type ?