Spray Combustion Synthesis of Oxide Transistors

Slides:

Advertisements

Similar presentations

Display Systems and photosensors (Part 2)

Advertisements

Romano Torres 9th January DC/DC Converters To convert a dc input voltage Vs into a dc output voltage Vo; To regulate the dc output voltage against.

Graphene & Nanowires: Applications Kevin Babb & Petar Petrov Physics 141A Presentation March 5, 2013.

Solution processible Inorganic Nanocrystal based Thin-film Transistor Hongki Kang EE235 April

Technologies for Realizing Carbon Nano-Tube (CNT) Vias Clarissa Cyrilla Prawoto 26 November 2014.

Kansas State University III-Nitride Deep Ultraviolet Photonic Materials and Structures Jingyu Lin & Hongxing Jiang DMR Growth of III-nitride Photonic.

Technologies for integrating high- mobility compound semiconductors on silicon for advanced CMOS VLSI Han Yu ELEC5070.

National Science Foundation Thin Film Electrolytes for Energy Devices Jane P. Chang, University of California, Los Angeles, DMR Outcome: Researchers.

Page 1 Band Edge Electroluminescence from N + -Implanted Bulk ZnO Hung-Ta Wang 1, Fan Ren 1, Byoung S. Kang 1, Jau-Jiun Chen 1, Travis Anderson 1, Soohwan.

Aqueous Synthesized Epitaxial ZnO via Microwave Heating Frederick F. Lange, University of California-Santa Barbara, DMR Aqueous Synthesis of ZnO.

Large Area Processing Research Programme National Science Foundation Manufacturing Energy Workshop 24 – 25 March 2009.

Relations between Structure, Phase Formation and Phase Transitions in Supercooled Metallic Liquids and Glasses Kenneth F. Kelton, Washington University,

Fabrication of oxide nanostructure using Sidewall Growth 田中研 M1 尾野篤志.

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between and 3x10 20 cm -3 by.

Influence of carrier mobility and interface trap states on the transfer characteristics of organic thin film transistors. INFM A. Bolognesi, A. Di Carlo.

Flexible Hybrid Electronic Systems Ananth Dodabalapur The University of Texas at Austin.

Despite tremendous progress made in the synthesis of surface-grafted polymer brushes, there have been few reports of polymer brushes in organic electronics.

Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.

Highly transparent solution processed In-Ga-Zn oxide thin films 指導教授 : 林克默博士學生 : 董祐成日期 :99/08/16 Y. Wang S. W. Liu X. W. Sun J. L. Zhao G. K. L. Goh.

Flexible Hybrid Electronic Systems Ananth Dodabalapur The University of Texas at Austin.

Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.

Electronic devices which are  Optically transparent  See-through  Invisibly light in weight  Transparent in visible portion of the Electromagnetic.

TRANSPARENT ELECTRONICS

Advanced Science and Technology Letters Vol.29 (IRTT 2013), pp Fabrication and Characteristics analysis.

2.Local Electric Property 5.Composition and Structure

Li Zeng1, M. Moghadam1, D. Buchholz1, D. Keane3, Tobin J

Topic: 2016졸업논문 - 소스 및 드레인 전극 재료에 따른 비정질 InGaZnO 박막 트랜지스터의 소자열화

PLASTIC ELECTRONICS RajshekaR EC-2.

From: Nanoscale Heat Conduction Across Metal-Dielectric Interfaces

Introduction Thin films of hydrogenated amorphous silicon (a-Si:H) are used widely in electronic, opto-electronic and photovoltaic devices such as thin.

All Nanocrystal Electronics Support: Primary NSF MRSEC DMR

Kai Nia, Enxia Zhanga, Ronald D. Schrimpfa,

Metal-Free Carbon-Based Nanomaterial Coatings Protect Silicon Photoanodes in Solar Water-Splitting NSF-MRSEC DMR Mark Hersam, and Lincoln Lauhon,

Structure and Operation of the MOSFET

Structure and Operation of the MOSFET

IRG-III. Mechanical Stress and Temperature Can

SEMINAR 1. Title : Non-volatile memory device and application

Seung Jae Yu, Jae Hyun Ryu, Geun Woo Baek,

In-situ Crystallization and Morphological Evolution in Multicomponent Indium Oxide Thin Films NSF-MRSEC DMR Peter Voorhees and Vinayak Dravid,

Solution-Processed Indium Oxide Transistors: Printing Two-Dimensional Metals UMN MRSEC Award DMR# Dan Frisbie & Chris Leighton (IRG-1), University.

Flexible Hybrid Electronic Systems

Search for Superconductivity with Nanodevices

Forward-looking Metalens

Nat. Rev. Endocrinol. doi: /nrendo

Polydactyly L.A. Lettice, et al. Proc. Natl. Acad. Sci. USA 2002; 99(11):

Choreographing a Whirling Dervish

Lecture 19 OUTLINE The MOS Capacitor (cont’d) The MOSFET:

The 3D models in part a are reproduced with permission from Daum, B

Lecture 19 OUTLINE The MOS Capacitor (cont’d) The MOSFET:

Reconfigurable 2D Materials with Neuromorphic Functionality

Nat. Rev. Cardiol. doi: /nrcardio

Ionic liquid gating of VO2 with a hBN interfacial barrier

Structure and Operation of the MOSFET

Parameter Space for Amorphous Oxide Semiconductors (AOSs)

Fig. 4 3D reconfiguration of liquid metals for electronics.

Doping in solution vs. doping in plasma Principal Investigators

Fig. 4 Electrical properties and patterning of the stretchable PEDOT/STEC (STEC content is 45.5 wt % for all). Electrical properties and patterning of.

Fig. 1 Schematics and design of the device structure.

Amorphous to Crystalline Transition in Indium Oxide Semiconductors

Electronic structure of the oligomer (n = 8) at the UB3LYP/6-31G

Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride by Daowei He, Jingsi Qiao, Linglong Zhang,

Fig. 3 HfSe2 transistors. HfSe2 transistors. (A) Schematic of HfSe2 device, back-gated through 90-nm SiO2, and with ALD alumina used as both protective.

Fig. 1 Schematic view and characterizations of FGT/Pt bilayer.

T. M. Truskett, D.J. Milliron: University of Texas at Austin

Atomic structure of sensitive battery materials and interfaces revealed by cryo–electron microscopy by Yuzhang Li, Yanbin Li, Allen Pei, Kai Yan, Yongming.

Materials Research Science and Engineering Centers DMR 2018

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides by Michal J. Mleczko, Chaofan Zhang, Hye Ryoung Lee, Hsueh-Hui Kuo, Blanka Magyari-Köpe,

Fig. 4 Comparison of different catalyst loading methods and substrates in the cathode of a PEMEC (one is on the membrane and the other one is on the LGDL).

Information Storage and Spintronics 08

Fig. 1 Schottky junctions based on a layered PdCoO2 and β-Ga2O3 for high-temperature operation. Schottky junctions based on a layered PdCoO2 and β-Ga2O3.

Presentation transcript:

Spray Combustion Synthesis of Oxide Transistors X. Yu,a,b J. Smith,a N. Zhou,a L. Zeng,a P. Guo,a Y. Xia,c A. Alvarez,c S. Aghion,f H. Lin,a,b J. Yu,b R. P. H. Chang,a M. J. Bedzyk,a R. Ferragut,d T. J. Marksa, A. Facchettia,c aNorthwestern University; bUniversity of Electronic Science and Technology of China; ePolyera Corporation; fPolitecnico di Milano Metal oxide (MO) semiconductors have recently emerged as contenders for next-generation transparent electronics. Impressive progress in solution-processed MO electronics has been achieved, however, due to incomplete lattice condensation and film densification, high-quality MO films having technologically-relevant thicknesses have not been realized. Now a MRSEC team has invented a new low-temperature thickness-controlled film growth process to create high-performance solution-processed MO electronics, spray-combustion synthesis (SCS), demonstrating for the first time amorphous indium-gallium-zinc oxide (a-IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, transistor bias stability, and film transport approaching those of sputtered films, and compatible with conventional FAB manufacture. Top: SCS process schematic. Bottom: Mobility statistics vs. processing temperature for conventional (red) and SCS (blue) IGZO TFTs with SiOx dielectric. Green: with an SCS ZrOx dielectric NSF MRSEC Grant DMR-1121262 X. Yu, et al. Proc. Nat. Acad. Sci. USA 112, 3217 (2015).