Electrical Properties of MPPC/SiPM/GMAPD’s

Slides:



Advertisements
Similar presentations
ECE 663 Ideal Diode I-V characteristic. ECE 663 Real Diode I-V characteristic.
Advertisements

© Electronics ECE 1231 Recall-Lecture 3 Current generated due to two main factors Drift – movement of carriers due to the existence of electric field Diffusion.
Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.
Ideal Diode Equation.
PN Junction Diodes.
Reverse biased PN junction p n p n Reverse biased PN junction energy diagram.
S. RossEECS 40 Spring 2003 Lecture 14 Last time… I V +_+_ Reverse breakdown Reverse bias Forward bias I V ZK VFVF V Focus we introduced the diode and its.
Lecture 15, Slide 1EECS40, Fall 2004Prof. White Lecture #15 OUTLINE The pn Junction Diode -- Uses: Rectification, parts of transistors, light-emitting.
Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.
10/11/2004EE 42 fall 2004 lecture 181 Lecture #18 Summary of ideal devices, amplifier examples Reminder: MIDTERM coming up one week from today (Monday.
Department of Information Engineering286 Transistor 3-layers device –npn (more common) –pnp (less common) N P N e b c P N P e b c.
Electronic Instrumentation Experiment 6: Diodes * Part A: Diode I-V Characteristics * Part B: Rectifiers Part C: PN Junction Voltage Limitation Part D:
Ideal Diode Equation. Important Points of This Lecture There are several different techniques that can be used to determine the diode voltage and current.
Characterization of Silicon Photodetectors (Avalanche Photodiodes in Geiger Mode) S. Cihangir, G. Mavromanolakis, A. Para. N.Saoulidou.
Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Operation of PN junctions:
Circuit Analysis of Circuits Containing Diodes. Definition of Diode Current and Voltage Forward Bias ▫When I D > 0mA and V D > 0V Reverse Bias ▫When I.
4/11/2006BAE Application of photodiodes A brief overview.
9/27/2004EE 42 fall 2004 lecture 121 Lecture #12 Circuit models for Diodes, Power supplies Reading: Malvino chapter 3, Next: 4.10, 5.1, 5.8 Then.
Changing Device Parameters in PSpice
Lecture content provided by Kenneth Connor at Rensselaer Polytechnic Institute.
SiPM: Development and Applications
Recall-Lecture 4 Current generated due to two main factors
GRAPHING AND RELATIONSHIPS. GRAPHING AND VARIABLES Identifying Variables A variable is any factor that might affect the behavior of an experimental setup.
President UniversityErwin SitompulSDP 8/1 Dr.-Ing. Erwin Sitompul President University Lecture 8 Semiconductor Device Physics
Chapter 10 Diodes. 1. Understand diode operation and select diodes for various applications. 2. Analyze nonlinear circuits using the graphical load-line.
Resistance of a Diode MS&T Physics 2135, Lab E3. MS&T Physics 2135, Lab E3: Resistance of a DiodeSlide 2/5 Objectives  Determine how the resistance of.
EMT 112 / 4 ANALOGUE ELECTRONICS Self-Reading Power Transistor – BJT & MOSFET.
Semiconductor Diode.
CSE251 Lecture3 Semiconductor Diodes.
ITM UNIVERSE,VADODARA ELECTRONIC DEVICES & CIRCUITS TOPIC NAME TRANSISTOR BIASING (DC ANALYSIS) PREPARED BY: NAME: Dilsha Dharmajan Electronics & communication.
ANALOGUE ELECTRONICS CIRCUITS 1
Resistance & Nonlinearity of Diode
Recall-Lecture 5 DC Analysis Representation of diode into three models
EMT 112/4 ANALOGUE ELECTRONICS 1 Power Amplifiers Syllabus
Dept. of ECE, Univ. of Houston
Lecture 4 Bipolar Junction Transistors (BJTs)
Electronics The Seventh and Eighth and Lectures
Load-Line Analysis of Complex Circuits with small signal diode model
Lecture #14 OUTLINE Midterm #1 stats The pn Junction Diode
Chapter 6. pn Junction Diode
Recall-Lecture 4 Current generated due to two main factors
Recall-Lecture 4 Current generated due to two main factors
Diodes Introduction Textbook CD
Power Laws and Log-log Plots
Recall-Lecture 5 DC Analysis Representation of diode into three models
ELECTRONICS AND COMMUNICATION
3: CMOS Transistor Theory
SEMICONDUCTORS.
Diode Equation and Models
PIN DIODE.
Lecture 5 OUTLINE PN Junction Diodes I/V Capacitance Reverse Breakdown
VLSI System Design Lect. 2.1 CMOS Transistor Theory
Changing Device Parameters in PSpice
Notes on Diodes 1. Diode saturation current:  
Lecture content largely provided by
Recall Lecture 11 DC Analysis and Load Line
Ohms Law required Practical
Lecture content largely provided by
Deviations from the Ideal I-V Behavior
Comparison of CPTA and Hamamatsu SiPMs
Lecture 3: CMOS Transistor Theory
Lecture 4 OUTLINE Bipolar Junction Transistor (BJT)
Recall Last Lecture DC Analysis and Load Line
Lecture 3: CMOS Transistor Theory
BY- PROF. MONU RAGHUWANSHI DEPARTMENT OF ENGG. PHYSICS
Lecture 3: CMOS Transistor Theory
The Junction Diode Junction Diodes:
PN-JUNCTION.
Recall Last Lecture DC Analysis and Load Line
The Junction Diode Junction Diodes:
Presentation transcript:

Electrical Properties of MPPC/SiPM/GMAPD’s Adam Para June 24, 2011

Motivation MPPC/SiPM/GMAPD are avalanche diodes biased in the reverse direction and operated in a Geiger mode (so we think) Their behavior depends on the electrical properties of a cell: resistance and capacitance, hence it is important to measure these properties for different detectors we are trying to understand Detectors: 1 mm x 1 mm, 20m pixel 025U, 50m pixel 050U, 100m pixel (100U) 3 mm x 3 mm, 50m pixel, 050PX

Ideal Diode (Shockley) Current in the forward direction, where thermal voltage saturation current

I-V Curve for a Real Detector We have a quenching resistor in series with the diode

Hamamatsu 025U 1 mm x 1 mm, 1600 pixels

the same data in a linear and logarithmic scale I-V characteristics measured at temperatures from -60C to +50C Shockley equation provides a very good description of the measured I-V curves over 5 orders of magnitude slopes of the lines on a linear plot => total resistance Assuming the parasitic resistance is small, the quenching resistance Rq=NpixelxRdev slopes of the lines on the log plots => thermal voltage vertical offset on the logarithmic plot => saturation current all parameters change with temperature

I-V Diode Only

Quenching Resistance Quenching resistor gets smaller as the temperature rises (polysilicon!) Non-linear dependence of the quenching resistance on temperature

Thermal Voltage fitted values of the thermal voltage change linearly with temperature, as expected quenlity factor n very close to 1 (1.04)

Saturation Current Saturation current varies by 10 orders of magnitude. Presumably related to dark pulses rates

Hamamatsu 050U 1 mm x 1 mm, 400 pixels

Hamamatsu 100U 1 mm x 1 mm, 100 pixels

Hamamatsu 050PX 3 mm x3 mm, 3600 pixels

Comparison of detectors

Quenching Resistance 50U and 100U have very similar quenching resistor 25U has about twice as big 50PX has the resistor 50% higher then 50U

Thermal Voltage 25U, 50U and 100U have ‘the same diode’ 50PX diode seems to be somewhat different

Saturation Current 25U, 50U and 100U have ‘the same diode’ 50PX diode seems to be somewhat different