TimePix3 status and protection

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Presentation transcript:

TimePix3 status and protection Yevgen Bilevych Amsterdam 13.10.2015

Main technological steps for the formation of structure TimePix / SU-8 / Al grid 1. Formation of protection layer 2. Deposition of SU-8 3. Aluminum deposition 4. Formation of structure “support” / grid

TimePix TimePix3 16120 mm 16210 mm 14111 mm 14110 mm 107 single chips Surface materials: - Aluminum (aluminum oxide) - Silicon nitride - Silicon oxide - Thickness 725 µm

Protection layer formation TimePix TimePix3

TPX3 Polyimide mask

Dykes shape, size and location TimePix TimePix3 16120 mm 16210 mm 14111 mm 14100 mm lost area ~ 9,4% lost area ~ 3,1%

TimePix3

TimePix3/SU-8 dykes

TimePix3

TimePix3/SU-8 dykes (top and side)

TimePix3

TimePix3/SU-8 dykes (bottom and side)

TimePix3

TimePix3/SU-8 dykes (side)

TPX3 SU-8 mask

TimePix3/SU-8 dykes/Al grid

TimePix3/SU-8 dykes/Al grid

TimePix3/SU-8 dykes/Al grid

TimePix3/SU-8 dykes/Al grid

TPX3 Al grid mask

TPX3 Bottom electrode mask

Protection layer formation Two critical points Protection layer formation Al layer deposition AltaCVD cluster line EvaTec CLUSTERLINE® 200

High pressure water jet TimePix W0064 EN5MX1X High pressure water jet O2 plasma HNO3 fuming

High pressure water jet TimePix W0065 EX5MVTX High pressure water jet O2 plasma

W0064 W0065

Initial wafer surface preparation!!!

No delay after Al deposition!!!

Plans Silicon nitride deposition onto W0066 EV5MWCX (55 A-type chips) Complete test run with TPX3 masks set TPX3 (Wafer 15) / InGrid run