Date of download: 10/20/2017 Copyright © ASME. All rights reserved. From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application J. Electron. Packag. 2016;138(1):011001-011001-6. doi:10.1115/1.4032029 Figure Legend: Cumulative structure function of 3 W LED for various boundary conditions measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

Date of download: 10/20/2017 Copyright © ASME. All rights reserved. From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application J. Electron. Packag. 2016;138(1):011001-011001-6. doi:10.1115/1.4032029 Figure Legend: Variation of junction temperature rise with respect to boundary conditions measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

Date of download: 10/20/2017 Copyright © ASME. All rights reserved. From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application J. Electron. Packag. 2016;138(1):011001-011001-6. doi:10.1115/1.4032029 Figure Legend: Surface morphology of (a) bare, (b) 400 nm, and (c) 800 nm ZnO thin film coated on the Cu substrates

Date of download: 10/20/2017 Copyright © ASME. All rights reserved. From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application J. Electron. Packag. 2016;138(1):011001-011001-6. doi:10.1115/1.4032029 Figure Legend: Change in CCT of 3 W LED for various boundary conditions measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

Date of download: 10/20/2017 Copyright © ASME. All rights reserved. From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application J. Electron. Packag. 2016;138(1):011001-011001-6. doi:10.1115/1.4032029 Figure Legend: Variation of Lux of 3 W LED for various boundary conditions observed at (a) 100 mA, (b) 350 mA, and (c) 700 mA