Radiation Monitor: Concepts, Simulation for an Advanced Read Out

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Presentation transcript:

Radiation Monitor: Concepts, Simulation for an Advanced Read Out R. Cardarelli, A. Di Ciaccio, L. Paolozzi INFN-Roma Tor Vergata Super-B Collaboration meeting 20/09/2012 Pisa

Outline Location of the beam monitor in the Super-B detector. Test of a mono c. v.s. poly c. diamond detector with SiGe amplifier. Conclusions and future plans.

Location of the detectors

geometry of the detector Diamond detectors 4mm x 4mm 8 diamond detectors for each ring feature detector size 8 X16 mm2 leakage current 80x10-10 A Ionization current 6.7x10-10 A hits rate 130KHz Transit time 20 ns Integration time 30 ns Electric resistance 1011 Ωcm energy threshold 150KeV Diamond detectors 4mm x 4mm

Tentative electronics diagram . HV 500 Volt 100 kOhm 10m coax. Cable Ø = 0.7 mm Pico Amp Diamond detector amp digitizer CPU amp

Multi-Coaxial Cable Ø = 0.7 mm

Amplifier, AC, (BJT SiGe, BFP740) Voltage supply 5 Volt Sensitivity 6 mV/fC noise 500 e- RMS Input impedance 50 Ohm B.W. 30 MHz Power consumption 10 mW/ch Low cost 2 – 3 eur./ch Radiation hardness 50 Mrad, 1015 n cm-2

Signal from a minimum ionizing particle 20ns/div. 20ns/div.

Americium-241 + Sr-90 Am-241 Sr-90 noise

Polycrystal diamond: alfa source (log scale)

Drift of the monocrystal diamond

Problems of standard diamont detectors Monocrystal is unstable. Polycrystal has low charge collection efficiency.

Standard diamond detector

New detector concept graphite 0.2 mm Graphite+Al P - Diamond

Conclusions The background of the detector has been simulated. The developement of FE electronics is in progress. A new structure of diamond detector has been proposed to solve the main problems of the present ones.

Future plans for 2013 Test at H8 (CERN) with muon beam. Test of the new detectors. Test of the final layout. Developement of a full custom FE electronics in SiGe technology.