APDs with ultra-thin avalanche region for sensitive X-ray detection

Slides:



Advertisements
Similar presentations
New developments of Silicon Photomultipliers (for PET systems)
Advertisements

Pulsed Fiber Laser Autocorrelator
Special Focus Workshop “Towards 10 ps single soft photon detectors” 2013 IEEE NSS/MIC/RTSD Seoul Sunday Oct 27, 2013.
Integrated Circuit Devices
SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Breakdown Voltage(1) SD Lab. SOGANG Univ. Doohyung Cho.
Detector lecturesT. Weidberg1 Opto-electronics Why use opto-electronics –General advantages –HEP experiments Elements of system –Emitters –Fibres –Receivers.
EE 230: Optical Fiber Communication Lecture 11 From the movie Warriors of the Net Detectors.
Spring 2007EE130 Lecture 17, Slide 1 Lecture #17 OUTLINE pn junctions (cont’d) – Reverse bias current – Reverse-bias breakdown Reading: Chapter 6.2.
OPTICAL DETECTORS IN FIBER OPTIC RECEIVERS.
Chapter 6 Photodetectors.
V. Semiconductor Photodetectors (PD)
Min-Hyeong Kim High-Speed Circuits and Systems Laboratory E.E. Engineering at YONSEI UNIVERITY
Chapter 5 Optical Detector.
Venugopala Rao Dept of CSE SSE, Mukka Electronic Circuits 10CS32.
Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh.
Detector development and physics studies in high energy physics experiments Shashikant Dugad Department of High Energy Physics Review, 3-9 Jan 2008.
PSD8 September 2008, Glasgow.P R Hobson, Brunel University 1 Avalanche Photodiodes and Vacuum Phototriodes for the Electromagnetic Calorimeter of the CMS.
Photodetection EDIT Internal photoelectric effect in Si Band gap (T=300K) = 1.12 eV (~1100 nm) More than 1 photoelectron can be created by light in silicon.
Photo Detectors for Fiber Optic Communication
MIT Lincoln Laboratory NU Status-1 JAB 11/20/2015 Advanced Photodiode Development 7 April, 2000 James A. Burns ll.mit.edu.
1 Development of Multi-Pixel Photon Counters (1) S.Gomi, T.Nakaya, M.Yokoyama, M.Taguchi, (Kyoto University) T.Nakadaira, K.Yoshimura, (KEK) Oct
Min Hyeong KIM High-Speed Circuits and Systems Laboratory E.E. Engineering at YONSEI UNIVERITY
Power Semiconductor Devices Power Diodes Cross-sectional view of a pn- junction diode intended for power applications. I-V characteristics of a pn- junction.
KEN, JERI FU JEN CATHOLIC UNIVERSITY 2008/DEC./11 1 Testing Status of P.P. & APD.
Photodetectors What is photodetector (PD)? Photodetector properties
Simulation Status and Problems for SiPM/APD Pico-Second Timing Simulation Workshop University of Chicago, Chicago, USA December 12, 2006 Alexandre Vaniachine,
Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1μm MOSFET’s with Epitaxial and δ-Doped Channels A. Asenov and S. Saini, IEEE.
Status of CNM RD50 LGAD Project27th RD50 Workshop, CERN 2-4 Dec Centro Nacional del MicroelectrónicaInstituto de Microelectrónica de Barcelona Status.
Device Research Conference 2007 Erik Lind, Adam M. Crook, Zach Griffith, and Mark J.W. Rodwell Department of Electrical and Computer Engineering University.
Venugopala Rao Dept of CSE SSE, Mukka Electronic Circuits 10CS32.
S.S.GaO. Outline Introduction Experiment Results and discussion Conclusion References.
NASA UPN: JPL Project: JPL Task # QUARTERLY TECHNICAL PROGRESS REVIEW TASK TITLE:Sensor Technology QUARTER:2 FY05 COORDINATING.
Study of Geiger Avalanche Photo Diode applications to pixel tracking detectors Barcelona Main Goal The use of std CMOS tech. APD's in Geiger mode (that.
Silicon Photomultiplier Development at GRAPES-3 K.C.Ravindran T.I.F.R, OOTY WAPP 2010 Worshop On behalf of GRAPES-3 Collaboration.
G. PellegriniInstituto de Microelectrónica de Barcelona Status of LGAD RD50 projects at CNM28th RD50 Workshop (Torino) 1 Status of LGAD RD50 projects at.
Topic Report Photodetector and CCD
Bandgap (eV) Lattice Constant (Å) Wavelength ( ㎛ ) GaN AlN InN 6H-SiC ZnO AlP GaP AlAs.
Lecture 11 OUTLINE pn Junction Diodes (cont’d) – Narrow-base diode – Junction breakdown Reading: Pierret 6.3.2, 6.2.2; Hu 4.5.
Application of photodiodes
Personal background Beng (Hons) Electrical and Electronics Engineering, Malaysia MSc Electrical and Electronics majoring in Photonics, Malaysia.
Recall-Lecture 5 DC Analysis Representation of diode into three models
WP 2 Materials for Security : Overview - ESR 5, 6, 7 & 8
Electronics & Communication Engineering
Current Channeling – End View, Vertical Section, Not to scale
Lecture 12 OUTLINE pn Junction Diodes (cont’d) Junction breakdown
PN-junction diodes: Applications
Semiconductor Diode.
InP/InGaAsP/InGaAs SWIR APDs
First production of Ultra-Fast Silicon Detectors at FBK
MBE Growth of Graded Structures for Polarized Electron Emitters
Conversion of optical signal into an electric one.
Parul Institute of Engineering & Technology
Contact Resistance Modeling in HEMT Devices
(WP2) Characterization of Novel Materials for APDs
Photodetectors.
V. Semiconductor Photodetectors (PD)
Thin Planar Sensors for Future High-Luminosity-LHC Upgrades
تحليل الحساسية Sensitive Analysis.
Chapter 26 Optoelectric Devices.
Lecture #17 OUTLINE pn junctions (cont’d) Reverse bias current
Semiconductor sensors
Chapter 3. PN Junctions and Related Devices
APDs with ultra-thin avalanche region for sensitive X-ray detection
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
pn Junction Electrostatics
Radiation Sensors Radiation is emission if either particles or electromagnetic rays from a source. Particles are usually nuclear particles which can be.
Thin Film Applications
Department of Electronics
Lecture 12 OUTLINE pn Junction Diodes (cont’d) Junction breakdown
05/05/28 Optical Characterization of Stem Well with Low Density Modulation-Doping Toshiyuki Ihara Abstract. I measured PL and PLE spectra of low density.
Presentation transcript:

APDs with ultra-thin avalanche region for sensitive X-ray detection PROMIS APDs with ultra-thin avalanche region for sensitive X-ray detection Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Searching for the perfect profile… PROMIS Searching for the perfect profile… Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Our devices PROMIS Lucas Pinel PROMIS Workshop 50.0 nm n In0.53Ga0.47As 100.0 nm n Al0.85Ga0.15As0.56Sb0.44 100.0 nm i Al0.85Ga0.15As0.56Sb0.44 47.0 nm p Al0.85Ga0.15As0.56Sb0.44 25.0 nm i Al0.85Ga0.15As0.56Sb0.44 25.0 nm i In0.52Al0.48As 25.0 nm i Al0.27Ga0.2In0.53As 25.0 nm i Al0.13Ga0.34In0.53As 300.0 nm i In0.53Ga0.47As 500.0 nm p In0.53Ga0.47As 300nm p In0.53Ga0.47As 100.0 nm n In0.53Ga0.47As 300.0 nm n AlAs0.56Sb0.44 80.0 nm i AlAs0.56Sb0.44 115.0 nm p AlAs0.56Sb0.44 10.0 nm i AlAs0.56Sb0.44 10.0 nm i In0.52Al0.48As 10.0 nm i Al0.27Ga0.2In0.53As 10.0 nm i Al0.13Ga0.34In0.53As 360.0 nm i In0.53Ga0.47As 500.0 nm p In0.53Ga0.47As 300nm p In0.53Ga0.47As Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Our devices PROMIS Lucas Pinel PROMIS Workshop The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Electrical characterisation PROMIS Electrical characterisation Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Electrical characterisation PROMIS Electrical characterisation Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Electrical characterisation PROMIS Electrical characterisation Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Summary of progress PROMIS Etching recipe improvement: Better reproducibility Less edge breakdown Better doping control in AlAsSb layer Working photodiodes with low gain Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

PROMIS Future work Need for better control of dopant (Be) activation in AlAsSb layer => try annealing Testing working diodes with X-ray Planar diodes to overcome etching difficulties Lucas Pinel The University of Sheffield PROMIS Workshop Cádiz 18-20 May 2016

Feedback: Privacy Policy Feedback
Do Not Sell My Personal Information
About project: SlidePlayer Terms of Service

© 2025 SlidePlayer.com. Inc. All rights reserved.