EKT104 ANALOG ELECTRONIC CIRCUITS [LITAR ELEKTRONIK ANALOG] DR NIK ADILAH HANIN BINTI ZAHRI adilahhanin@unimap.edu.my

INTRODUCTION Course Outcomes Course Delivery Course Assessment Lecturers Book References Review of BJT

COURSE OUTCOMES CO1 : Ability to ANALYZE dc , small-signal analysis and frequency performance of basic configurations of amplifier (BJT and FET). CO2 : Ability to DESIGN basic configurations of BJT and FET amplifiers. CO3 : Ability to ANALYZE and PERFORM simple design of classes A, B and AB of BJT and FET power amplifiers in term of their frequency response, equivalent circuit, thermal management and gain. CO4 : Ability to DESCRIBE the principles operation of some special electronic devices such as Triac, UJT, SCR and ANALYZE their application circuits.

COURSE DELIVERY Number of Units : 4 Lecture : 3 hours/week x 14 weeks = 42 hours Lab/Tutorial: 2 hours per week x 14 weeks = 28 hours

COURSE ASSESSMENT Final Examination 50% Mid Term Test 1 10% Lab Assessment 20% Lab test 10%

LECTURERS DR NIK ADILAH HANIN BT ZAHRI adilahhanin@unimap.edu.my DR ONG BI LYNN drlynn@unimap.edu.my DR AMIZA AMIR mizmieza@gmail.com

BOOK REFERENCES Textbook: Donald A. Neamen, ‘MICROELECTRONICS Circuit Analysis & Design’,3rd Edition’, McGraw Hill International Edition, 2007 Reference Books: Boylestad, R.L. , Nashelsky, L., “Electronic Devices and Circuit Theory”, 8th Edition, Prentice Hall, 2002. Thomas L. Floyd, ‘Electronic devices: Conventional Current Version’, 7th ed.’, Prentice Hall Gates, E.D. , “Introduction to Electronics”, 5th Edition, Delmar Cengage Learning.

INTRODUCTION TO BJT AMPLIFIER Bipolar Junction Transistor (Review)

FUNDAMENTALS OF ELECTRICITY Current? Voltage? Resistance? Power?

FUNDAMENTALS OF ELECTRICITY Current? The flow/movement of electrons from negatively charged atoms to positively charged atoms. Voltage? The force or difference of potential that causes electrons to move/flow in a circuit Resistance? The opposition to the flow of the current Power? Rate of energy dissipated in a circuit

CONDUCTORS, INSULATORS & SEMICONDUCTORS Materials that contains a large number of free electrons Insulators Materials that prevent the flow of electricity Semiconductors Material that have electrical conductivity between a conductor and insulators.

N-TYPE & P-TYPE SEMICONDUCTORS to increase the no. of conduction-band electrons in intrinsic silicon (such as As, P, Sb) majority carrier: electrons p-type: to increase the no. of holes in intrinsic silicon (such as B, In, Ga) majority carrier: holes As Arsenic P Phosphorus Sb Antimony B Boron In Indium Ga Gallium

WHAT IS PN JUNCTION? still remember this? What’s the different between these two figures? Which one is forward-biased and reverse-biased? Cathode supplies and anode collects the electron

BIPOLAR JUNCTION TRANSISTOR Three-layer device used to amplify and switch power and voltage Constructed from semiconductors materials such as silicon and germanium 2 types: NPN & PNP

Remember these symbols? Still remember about BJT? Which one is NPN, PNP? What is C,B,E…?

BJT CURRENT The emitter current ( iE ) is the sum of the collector current (iC) and the base current (iB) iB << iE and iC

BJT Basic structure and schematic symbol pnp type npn type approximate equivalents transistor symbols pnp type npn type

REFRESH… Common-emitter current gain, β Common-base current gain, α Range: 50 < β < 300 Common-base current gain, α Range: always slightly less than 1 The current relationship between these 2 parameters are as follows: Where Beta = Ic/Ib Alpha = Ic/Ie

REFRESH… BJT as amplifying device B-E junction is forward-biased B-C junction is reverse-biased

BIASING OF BJT Remember…! for normal operation emitter-base junction is always forward- biased AND collector-base junction is always reverse- biased

CIRCUIT CONFIGURATION Common-base circuit Input enters emitter-base circuit and output leaves from collector-base circuit Common-emitter circuit Input enters base-emitter circuit and output leaves from collector-emitter circuit Common collector circuit Input enters base-collector circuit and output leaves from emitter-collector circuit

DC ANALYSIS: COMMON-EMITTER CIRCUIT Transistor current-voltage characteristics of the common-emitter circuit The collector current is plotted against collector emitter voltage.

DC ANALYSIS: COMMON-EMITTER CIRCUIT Common-emitter circuit with an npn transistor Common-emitter dc equivalent circuit, with piecewise linear parameters

DC ANALYSIS: COMMON-EMITTER CIRCUIT Usually VBE(on) = 0.7 V Common-emitter dc equivalent circuit Look for calculation examples in Neamen (Chapter 5), Example 5.3 & 5.4

DC ANALYSIS: LOAD LINE & MODES OF OPERATION Figure A Base-emitter junction characteristics and the input load line Base on Figure A, using KVL around B-E loop:

DC ANALYSIS: COMMON-EMITTER CIRCUIT Base on Figure A, 2 end points of the load line are found by setting IC = 0 So, VCE = VCC = 10 V When VCE = 0, IC = VCC/RC = 5 mA IBQ is the value from the previous slide = 15 µA So, ICQ = βIBQ If β = 200, ICQ = 3000 µA = 3 mA So, VCEQ = 4 V Common- emitter transistor characteristics and the collector-emitter load line

BJT AS AN AMPLIFIER Amplification of a small ac voltage by placing the ac signal source in the base circuit Vin is superimposed on the DC bias voltage VBB by connecting them in series with base resistor RB: Small changes in the base current circuit causes large changes in collector current circuit Fig 4-20a & b (stacked)

BJT AS AN AMPLIFIER (CONT’) (a) A bipolar inverter circuit to be used as a time-varying amplifier (b) The voltage transfer characteristic

SELF- READING Textbook: Donald A. Neamen, ‘MICROELECTRONICS Circuit Analysis & Design’,3rd Edition’, McGraw Hill International Edition, 2007 Chapter 5:The Bipolar Junction Transistor Page: 287-296, 303-309.