Fig. 1 from Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions.

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Fig. 1 from Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory (Image 1 of 2) Satoshi Takaya et al 2017 Jpn. J. Appl. Phys. 56 04CN07 doi:10.7567/JJAP.56.04CN07

Fig. 1 from Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory (Image 2 of 2) Satoshi Takaya et al 2017 Jpn. J. Appl. Phys. 56 04CN07 doi:10.7567/JJAP.56.04CN07