EMT362: Microelectronic Fabrication Multi Level Interconnect

Slides:

Advertisements

Similar presentations

Outline Curriculum (5 lectures) Each lecture  45 minutes

Advertisements

MICROELECTROMECHANICAL SYSTEMS ( MEMS )

Work in Progress --- Not for Publication 6 December Interconnect Working Group ITRS 2000 Lakeshore Hotel, Hsinchu, Taiwan, R.O.C. 6 December 2000.

Sputtering Eyal Ginsburg WW49/00.

Sputtering Eyal Ginsburg WW46/02.

Applications of Chemical Engineering Principles to Thin Film Deposition Process Development Collin Mui Chemical Engineering 140 Guest Lecture Stanford.

CMOS Fabrication EMT 251.

MULTILAYER INTERCONNECTS. -CONNECTIONS - ISOLATIONS.

CMOS Process at a Glance

“Carbon Nanotubes for Interconnect Applications”

Chapter 2 Modern CMOS technology

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: Ω-cm Thickness: µm.

School of Microelectronic Engineering EMT362: Microelectronic Fabrication Thin Gate Oxide – Growth & Reliability Ramzan Mat Ayub School of Microelectronic.

EE143 – Ali Javey Section 8: Metallization Jaeger Chapter 7.

SYNTHESIS OF COPPER NANOWIRES WITH NANO- TWIN SUBSTRUCTURES 1 Joon-Bok Lee 2 Dr. Bongyoung I. Yoo 2 Dr. Nosang V. Myung 1 Department of Chemical Engineering,

Electrochemical Aspects of Copper Chemical Mechanical Planarization (CMP) Esta Abelev, D. Starosvetsky and Y. Ein-Eli. Introduction: Copper is used as.

School of Microelectronic Engineering EMT362: Microelectronic Fabrication CMOS ISOLATION TECHNOLOGY Part 2 Ramzan Mat Ayub School of Microelectronic Engineering.

The Deposition Process

ECE/ChE 4752: Microelectronics Processing Laboratory

Technologies for Realizing Carbon Nano-Tube (CNT) Vias Clarissa Cyrilla Prawoto 26 November 2014.

Device Fabrication Example

Film Deposition in IC Fabrication

Machine Tools And Devices For Special Technologies Printed circuit manufacturing Slovak University of Technology Faculty of Material Science and Technology.

ES 176/276 – Section # 2 – 09/19/2011 Brief Overview from Section #1 MEMS = MicroElectroMechanical Systems Micron-scale devices which transduce an environmental.

Semiconductor Processing (front-end) Stuart Muter /02/2002.

CS/EE 6710 CMOS Processing. N-type Transistor + - i electrons Vds +Vgs S G D.

Fabrication of Active Matrix (STEM) Detectors

Integrated Circuit Devices Professor Ali Javey Summer 2009 Fabrication Technology.

Metallization: Contact to devices, interconnections between devices and to external Signal (V or I) intensity and speed (frequency response, delay)

IC Process Integration

Semiconductor Manufacturing Technology Michael Quirk & Julian Serda © October 2001 by Prentice Hall Chapter 9 IC Fabrication Process Overview.

Dielectrics • Dielectrics electrically and

KUKUM – SHRDC INSEP Training Program 2006 School of Microelectronic Engineering Lecture IV Metallization.

Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Class: ECE 6466 “IC Engineering”

© 2001 by Prentice HallSemiconductor Manufacturing Technology by Michael Quirk and Julian Serda Semiconductor Manufacturing Technology Michael Quirk &

Fabrication Technology(1)

Aluminum Nitride (AlN)

Norhayati Soin 05 KEEE 4426 WEEK 12/1 3/13/2005 KEEE 4426 WEEK 12 CMOS FABRICATION PROCESS.

EMT362: Microelectronic Fabrication Interlevel Dielectric Technology

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.

IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.

CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY, BHOPAL DEPARTMENT OF ELECTRONICS & COMMUNICATIONS NMOS FABRICATION PROCESS - PROF. RAKESH K. JHA.

Chapter13 :Metallization

Metallization materials should: physically it must:

Introduction to CMOS Process Integration

School of Microelectronic Engineering EMT362: Microelectronic Fabrication Contact Technology For The VLSI Process Ramzan Mat Ayub School of Microelectronic.

Institute of Applied Microelectronics and Computer Engineering College of Computer Science and Electrical Engineering, University of Rostock VIA DOUBLING.

Process integration Wafer selection active role for the wafer ? passive role ? –thermal conductivity –optical transparency –flat,

School of Microelectronic Engineering EMT362: Microelectronic Fabrication Contact Technology For The VLSI Process Ramzan Mat Ayub School of Microelectronic.

14 February, 2004SLIP, 2004 Self-Consistent Power/Performance/Reliability Analysis for Copper Interconnects Bipin Rajendran, Pawan Kapur, Krishna C. Saraswat.

CMOS Fabrication EMT 251.

Process integration 1: cleaning, sheet resistance and resistors, thermal budget, front end

EMT362: Microelectronic Fabrication Thin Gate Oxide – Growth &

Microfabrication Home 3 exercise Return by Feb 5th, 22 o’clock

Process technology Physical layout with L-Edit

Thin film technology, intro lecture

EMT362: Microelectronic Fabrication

Lecture 6 Metallization.

Layout and fabrication of CMOS circuits

Carbon Nanotube Vias By: Rhesa Nathanael.

EMT362: Microelectronic Fabrication CMOS ISOLATION TECHNOLOGY Part 2

EMT362: Microelectronic Fabrication CMOS ISOLATION TECHNOLOGY Part 1

CORTEN STEEL HOW DOES CORTEN STEEL WORK?

complementary metal–oxide–semiconductor Isolation Technology: Part 2

Standard 16-Mask CMOS Process Overall Structure of CMOS.

Corrosion Resistance What product need? car ship structure.

Presentation transcript:

EMT362: Microelectronic Fabrication Multi Level Interconnect Ramzan Mat Ayub; SATF 2005 EMT362: Microelectronic Fabrication Multi Level Interconnect Technology Ramzan Mat Ayub School of Microelectronic Engineering

Ramzan Mat Ayub; SATF 2005 Lecture Objectives Able to identify the main components in Aluminum and Copper metalization. Able to describe Aluminum metalization process Able to describe Copper metalization process

TERMINOLOGY PASSIVATION METAL-2 VIA-1 METAL-1 PMD IMD OR ILD-1 CONTACT Ramzan Mat Ayub; SATF 2005 TERMINOLOGY PASSIVATION METAL-2 VIA-1 METAL-1 PMD IMD OR ILD-1 CONTACT

REQUIREMENTS OF INTERCONNECT MATERIALS Ramzan Mat Ayub; SATF 2005 REQUIREMENTS OF INTERCONNECT MATERIALS LOW RESISTIVITY RESISTANCE TO ELECTROMIGRATION COMPATIBLE WITH CVD OXIDE STABLE AND CORROSION RESISTANCE DEPOSITABLE TO A CONTROLLED THICKNESS AND UNIFORMITY EASY TO ETCH CONTROLLABLE REFLECTIVITY

Aluminum Metalization Ramzan Mat Ayub; SATF 2005 Aluminum Metalization

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005 TIN- ARC AL TIN - BARRIER TI - SILICIDE

TI – WETTING / GLUE LAYER Ramzan Mat Ayub; SATF 2005 TIN - ARC ALUMINUM TI – WETTING / GLUE LAYER TUNGSTEN

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005