SEMINAR 1. Title : Toward the first-principles design of next-generation electronic devices based on two-dimensional nanomaterials 2. Speaker : Yong-Hoon.

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Presentation transcript:

SEMINAR 1. Title : Toward the first-principles design of next-generation electronic devices based on two-dimensional nanomaterials 2. Speaker : Yong-Hoon Kim (Graduate School of Energy, Environment, Water, & Sustainability, Korea Advanced Institute of Science & Technology) 3. Time : 16:00 – 17:00, Thursday, March 31, 2016 4. Place : e+ Lecture Hall (room 83188), 2nd Research Building, Sungkyunkwan University 5. Summary : In the effort to develop advanced optoelectronic devices based on graphene and related two-dimensional (2D) materials, first-principles computations are playing an increasingly important role by providing atomistic information that are not easily obtained in experiments. One of the remaining challenges in the field lies in the description of device channels driven into non-equilibrium by biased electrodes, which cannot be described by the standard density functional theory (DFT) and instead currently treated within the DFT-based non-equilibrium Green’s function (NEGF) formalism. However, the present DFT-NEGF scheme has many shortcomings, one of them being the inability to describe vertical van der Waals heterostructure tunneling transistors based on graphene electrodes and other 2D nanomaterials sandwiched between them [1]. In this talk, after discussing our two experiment-theory collaboration works on the next-generation graphene-based transistors in the conventional field effect transistor [2] and novel “barrister” [3] architectures, I will present our group’s recent effort to develop an innovative first-principles scheme that can provide an alternative to the DFT-NEGF one and its application to graphene-based vertical heterosturcture tunneling transistors. [1] L. Britnell et al., Science. 335, 947 (2012) [2] Y. Yu et al., Adv. Mater. 29, 1603925 (2017). [3] J. Shim et al., Adv. Mater. 28, 5293 (2016). 6 Background : Education - Ph.D. in Physics, University of Illinois at Urbana-Champaign, USA, 2000 - B.S. in Physics, Seoul National University, 1995 Work - Assistant & Associate Professor, Graduate School of EEWS, KAIST, 2010.7~ - Assistant Professor, School of Computational Sciecne, KIAS & Dept. of Materials Science & Engineering, University of Seoul, 2004.4~2010.6 – Postdoctoral Scholar, Technische Universität München, Germany (Humboldt Fellowship) & Materials and Simulation Center, Caltech, USA, 2000.8~2004.3 7. Questions : (☏ 031-299-4115)