IGBT.

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Presentation transcript:

IGBT

rEVISION Diode Silicon-Controlled Rectifi er (SCR) Triode AC Switch (TRIAC) MOSFET

INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) C-Collector E-Emitter G-Gate

Physical Operation: The IGBT operates in two modes: The principle behind the operation of an IGBT is similar to that of a power MOSFET. The IGBT operates in two modes: (i) The blocking or non-conducting mode (ii) The ON or conducting mode. It is similar to the symbol for an n–p–n bipolar-junction power transistor with the insulated-gate terminal replacing the base.

INSULATED-GATE BIPOLAR TRANSISTOR (IGBT):

INSULATED-GATE BIPOLAR TRANSISTOR (IGBT): The insulated-gate bipolar transistor is a recent model of a power-switching device that combines the advantages of a power BJT and a power MOSFET. Both power MOSFET and IGBT are the continuously controllable voltage-controlled switch. Constructional Features: The structure of an IGBT cell is shown in Fig. 8-19. The p region acts as a substrate which forms the anode region, i.e., the collector region of the IGBT. Then there is a buffer layer of n region and a bipolar-base drift region. The p-region contains two n regions and acts as a MOSFET source. An inversion layer can be formed by applying proper gate voltage. The cathode, i.e., the IGBT emitter is formed on the n source region.

REAL-LIFE APPLICATIONS: The IGBT is mostly used in high-speed switching devices. They have switching speeds greater than those of bipolar power transistors. The turn-on time is nearly the same as in the case of a power MOSFET, but the turn-off time is longer. Thus, the maximum converter switching frequency of the IGBT is intermediate between that of a bipolar power transistor and a power MOSFET.

POINTS TO REMEMBER: 1. A thyristor is a multilayer p–n terminal electronic device used for bi-stable switching. 2. The SCR has two states: (a) High-current low-impedance ON state (b) Low-current OFF state 3. Latching current is defined as a minimum value of anode current which is a must in order to attain the turn-on process required to maintain conduction when the gate signal is removed. 4. Holding current is defined as a minimum value of anode current below which it must fall for turning off the thyristor.. 5. The TRIAC is a bidirectional thyristor with three terminals. It is used extensively for the control of power in ac circuits. 6. The DIAC is an n–p–n or p–n–p structure with a uniformly doped layer.

POINTS TO REMEMBER: 7. Applications of the UJT: (a) As trigger mechanism in the SCR and the TRIAC (b) As non-sinusoidal oscillators (c) In saw-tooth generators (d) In phase control and timing circuits 8. The UJT operation can be stated as follows: (a) When the emitter diode is reverse-biased, only a very small emitter current flows. Under this condition RB1 is at its normal high-value. This is the OFF state of the UJT. (b) When the emitter diode becomes forward-biased RB1 drops to a very low value so that the total resistance between E and B1 becomes very low, allowing emitter current to flow readily. This is the ON state. 9. The IGBT is mostly used in high-speed switching Devices.