From: Heat Transfer in Thermoelectric Materials and Devices Date of download: 10/25/2017 Copyright © ASME. All rights reserved. From: Heat Transfer in Thermoelectric Materials and Devices J. Heat Transfer. 2013;135(6):061605-061605-15. doi:10.1115/1.4023585 Figure Legend: Figure of merit ZT of selected state of the art thermoelectric materials versus temperature for (a) p-type and (b) n-type. (p-type: Si0.8Ge0.2 [33], Bi0.5Sb1.5Te3 [88], 2% Tl-doped PbTe [59], Na-doped PbTe0.85Se0.15 [30], Na-doped PbTe-PbS 12% [90], half-Heusler Hf0.8Ti0.2CoSb0.8Sn0.2 [50]; n-type: Si0.8Ge0.2 [32], multifilled skutterudites BaxLayYbzCo4Sb12 [39], half-Heusler Hf0.75Ti0.25NiSn0.99Sb0.01 [49], 1% Al-doped PbSe [60], Bi2Te2.7Se0.3 [96].)

From: Heat Transfer in Thermoelectric Materials and Devices Date of download: 10/25/2017 Copyright © ASME. All rights reserved. From: Heat Transfer in Thermoelectric Materials and Devices J. Heat Transfer. 2013;135(6):061605-061605-15. doi:10.1115/1.4023585 Figure Legend: (a) Thermal conductivity versus temperature from first-principles calculations (lines) and experimental measurements (symbols), and (b) normalized cumulative thermal conductivity as a function of phonon MFPs at 300 K from first-principles calculations for different bulk crystalline materials, Si [125], Ge [122], GaAs [131], ZrCoSb [129], PbTe [128], PbSe [128], and Bi [133]