Alternative process flows for reduction of steps

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Presentation transcript:

Alternative process flows for reduction of steps

Solution 1 Metalization steps Passivation steps To do at Leti (3 litho) To do at CMi Alignment marks Lithography for phosphorus ion implantation (Front side) Phosphorus ion implantation (Front side) Lithography for boron ion implantation (Front side) Boron ion implantation(Front side) Boron ion implantation(Back side) SiO2-SiO2 temporary bonding Thinning Low temperature bonding Cutting of 8 inches wafers in 4 inches shapes Metalization steps Passivation steps

Solution 2 Metalization steps Passivation steps To do at Leti (2 litho) To do at CMi Alignment marks Lithography for phosphorus ion implantation (Front side) Phosphorus ion implantation (Front side) Boron ion implantation(Back side) SiO2-SiO2 temporary bonding Thinning Low temperature bonding Cutting of 8 inches wafers in 4 inches shapes Metalization steps Passivation steps

Solution 3 SiO2-SiO2 temporary bonding Thinning To do at Leti (0 litho, work on 4 inches?) To do at CMi SiO2-SiO2 temporary bonding Thinning Low temperature bonding Alignment marks Lithography for phosphorus ion implantation (Front side) Phosphorus ion implantation (Front side) Lithography for boron ion implantation (Front side) Boron ion implantation(Front side) Boron ion implantation(Back side) Metalization steps Passivation steps