Bonding interface characterization devices

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Presentation transcript:

Bonding interface characterization devices Option 2: Schottky diodes

Materials High resistivity epitaxial silicon Low resistivity silicon High resistivity silicon wafer: >5000 ohm.cm Epitaxial layer thickness: around 20µm Resistivity epitaxial layer: >1000 ohm.cm Resistivity bulk silicon: 0.25 ohm.cm

Global view Legend Wafer before dicing Color Material Low doped P-type silicon Silicon dioxide Bonding interface

Step 1: thermal oxidation Wafer 1

Step 2: Temporary bonding Carrier wafer Wafer 1

Step 3: Thinning Carrier wafer Wafer 1 Swipe: 20µm 50µm 100µm

Step 4: covalent bonding Carrier wafer Wafer 1 Wafer 2 Instead of a standard high resistivity wafer, it is possible to use an epitaxial silicon wafer. This would avoid the need of ion implantation for ohmic contact.

Step 5: Temporary bonding release Wafer 1 Wafer 2

Step 6: Cut in a 4’’ wafer shape

Steps to do at CMi SiO2 contact openings (front side) Metal deposition for schottky contact (front side) Metal deposition for ohmic contact (back side)