PREPARED BY: 3rd SEM EC STUDENT (2015)

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Presentation transcript:

MAHATMA GANDHI INSTITUTE OF TECHNICAL EDUCATION & RESEARCH CENTER ,NAVSARI

PREPARED BY: 3rd SEM EC STUDENT (2015) ENROLLMENT NO. : NAME: 150333111001 BHRAMBHATT VISHAL K. 150333111005 MISTRY MIT B. 150333111006 PATEL DHAVAL S. 150333111012 PATHAN SALMAN k . Guided by: ……………………..

Presentation of - Transistor and it’s currents…

Introduction  collector : C The basic of electronic system nowadays is semiconductor device. The famous and commonly use of this device is BJTs (Bipolar Junction Transistors). It can be use as amplifier and logic switches. BJT consists of three terminal:  collector : C  base : B emitter : E Two types of BJT : pnp and npn

Transistor Construction 3 layer semiconductor device consisting: 2 n- and 1 p-type layers of material  npn transistor 2 p- and 1 n-type layers of material pnp transistor The term bipolar reflects the fact that holes and electrons participate in the injection process into the oppositely polarized material A single pn junction has two different types of bias: forward bias reverse bias Thus, a two-pn-junction device has four types of bias.

Position of the terminals and symbol of BJT. Base is located at the middle and more thin from the level of collector and emitter The emitter and collector terminals are made of the same type of semiconductor material, while the base of the other type of material

Transistor currents The arrow is always drawn on the emitter The arrow always point toward the n-type The arrow indicates the direction of the emitter current: pnp:E B npn: B E IC=the collector current IB= the base current IE= the emitter current

By imaging the analogy of diode, transistor can be construct like two diodes that connetecd together. It can be conclude that the work of transistor is base on work of diode.

Transistor Operation The basic operation will be described using the pnp transistor. The operation of the pnp transistor is exactly the same if the roles played by the electron and hole are interchanged. One p-n junction of a transistor is reverse-biased, whereas the other is forward-biased. Reverse-biased junction of a pnp transistor Forward-biased junction of a pnp transistor

Both biasing potentials have been applied to a pnp transistor and resulting majority and minority carrier flows indicated. Majority carriers (+) will diffuse across the forward-biased p-n junction into the n-type material. A very small number of carriers (+) will through n-type material to the base terminal. Resulting IB is typically in order of microamperes. The large number of majority carriers will diffuse across the reverse-biased junction into the p-type material connected to the collector terminal.