Electro-optics with Scotch Tape: A new Generation of Devices

Slides:



Advertisements
Similar presentations
EXPLORING QUANTUM DOTS
Advertisements

Room Temperature Tunneling Behaviors of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots CNMS User Project Highlight Scientific Achievement.
Metal Oxide Semiconductor Field Effect Transistors
Graphene & Nanowires: Applications Kevin Babb & Petar Petrov Physics 141A Presentation March 5, 2013.
M S El Bana 1, 2* and S J Bending 1 1 Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, UK 2 Department of Physics, Ain Shams University,
Scanning Probe Microscopy
Silicon Nanowire based Solar Cells
For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.
EE 230: Optical Fiber Communication Lecture 11 From the movie Warriors of the Net Detectors.
Solar Cell Operation Key aim is to generate power by:
Physics 218: Mechanics Instructor: Dr. Tatiana Erukhimova Lecture 11.
Copyright © Houghton Mifflin Company. All rights reserved. 16a–1 Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz.
STM / AFM Images Explanations from
Thin Film Deposition Prof. Dr. Ir. Djoko Hartanto MSc
MSE-630 Gallium Arsenide Semiconductors. MSE-630 Overview Compound Semiconductor Materials Interest in GaAs Physical Properties Processing Methods Applications.
Graphene-Based Polymer Composites and Their Applications Polymer-Plastics Technology and Engineering, 52: 319–331, 2013 Zachary Palmer, Kendall Wright,
Superconducting Qubits Kyle Garton Physics C191 Fall 2009.
Philip Kim Department of Physics Columbia University Toward Carbon Based Electronics Beyond CMOS Devices.
Copyright © Houghton Mifflin Company. All rights reserved. 16a–1 Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz.
Electric Components. Basics 1 Current: electrons moving together in same direction (electrons are always moving in materials like metals but in a random.
 Graphene: Exfoliation: Graphite flakes obtained from Asbury Carbons, Inc. are placed on clear tape in close proximity. Once applied to the tape, repeated.
Spin Dependent Transport Properties of Magnetic Nanostructures Amédée d’Aboville, with Dr. J. Philip, Dr. S. Kang, with Dr. J. Philip, Dr. S. Kang, J.
JUN YAN UNIVERSITY OF MASSACHUSETTS AMHERST 2015 SUMMER INSTITUE ON NANOSCIENCE.
Graphene – Optical Properties Michael Tsang UC Berkeley Physics 141A Spring 2013 Lawrence Berkeley Lab Manchester Group for monolayers.
Techniques of synthesizing mono-layer Molybdenum Sulfide (MoS 2 ) Wu Kam Lam.
TUNNEL DIODE (Esaki Diode) It was introduced by Leo Esaki in Heavily-doped p-n junction –Impurity concentration is 1 part in 10^3 as compared to.
Figure 3.1. Schematic showing all major components of an SPM. In this example, feedback is used to move the sensor vertically to maintain a constant signal.
Ferroelectric Nanolithography Extended to Flexible Substrates Dawn A. Bonnell, University of Pennsylvania, DMR Recent advances in materials synthesis.
Conductors – many electrons free to move
Graphene - Electric Properties
Nano-Graphene Platelets James Robbins MEEN What are Nano-Graphene Platelets (NGP)? Similar to Carbon Nanotubes (CNT) Graphene is a single atom thick.
REPLACING LITHIUM-ION BATTERIES: ADVANCING AUTOMOBILES WITH GRAPHENE SUPERCAPACITORS By Dan Passarello and Toby Sun The image above is an example of a.
Introduction to Solar Photovoltaic (PV) Systems – Part 2
1 Semiconductor Devices  Metal-semiconductor junction  Rectifier (Schottky contact or Schottky barrier)  Ohmic contact  p – n rectifier  Zener diode.
The Nobel Prize in Physics 2010 The Royal Swedish Academy of Sciences has decided to award the Nobel Prize in Physics for 2010 to Andre Geim and Konstantin.
Methods of point-contact preparation Prof. I.V.Krive lecture presentation Address: Svobody Sq. 4, 61022, Kharkiv, Ukraine, Rooms. 5-46, 7-36, Phone: +38(057)707.
The Fate of Silicon Technology: Silicon Transistors Maria Bucukovska Scott Crawford Everett Comfort.
Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.
Antenna Project in Cameron clean room Wafer preparation, conductor deposition, photolithography.
My research topics related to surface plasmon
EEE 2056 Physical Electronic Graphene and its application
Two-dimensional (2D) materials have attracted the attention of many researchers. The first created 2D material was graphene, it was discovered in the early.
Fatemeh (Samira) Soltani University of Victoria June 11 th
Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.
Introduction to CMOS VLSI Design Lecture 0: Introduction.
Presented by:- Shikha Gupta (UE6558). NANOELECTRONICS Branch of Engineering which uses nanometer scale elements in design of integrated circuits such.
Scanning Tunneling Microscopy Zachary Barnett Solid State II Dr. Elbio Dagotto April 22, 2008.
MIT Amorphous Materials 11: Amorphous Silicon Macroelectronics
Electrical contacts to two dimensional semiconductors
Unbound States A review on calculations for the potential step.
Basic Planar Processes
Stacking of Quasi 2D Transition Metal Dichalcogenides
Circuit QED Experiment
MoS2 RF Transistor Suki Zhang 02/15/17.
Floating gate memory based on MoS2 channel and iCVD polymer dielectric
Solids: Conductors, Insulators and Semiconductors
Today’s objectives- Semiconductors and Integrated Circuits
Riphah International University, Lahore
Quantum Size Effects in Nanostructures
Modelling & Simulation of Semiconductor Devices
In conjunction with Two-Dimensional Mapping of Energy Transfer in Graphene/MoS2 Photodetectors Michael Earle Ossining High School, Ossining, NY Stevens.
Nanotechnology Storing Data To Atoms
Graphite, Graphene (= single sheet) 2D
2D materials and van der Waals heterostructures
Scanning Probe Microscope
FROM DOPED SEMICONDUCTORS TO SEMICONDUCTOR DEVICES
Ionic liquid gating of VO2 with a hBN interfacial barrier
Fig. 1 Bands and hybridization in graphene-encapsulated WSe2 measured by μ-ARPES. Bands and hybridization in graphene-encapsulated WSe2 measured by μ-ARPES.
Illustration of MIS-C and the characterization of the device structure
Basic Planar Process 1. Silicon wafer (substrate) preparation
Presentation transcript:

Electro-optics with Scotch Tape: A new Generation of Devices Mishkenot Shaananim, 8/1/2016 I am grateful for the opportunity to present my research program. My name is Hadar Steinberg, and I am a new faculty member at the Hebrew University in Jerusalem. Hadar Steinberg

Once upon a time Achieving Lower Dimensions Image: doitpoms.ac.uk

The first graphene revolution The Isolation of Graphene I remember, when first seeing graphene talk by Kim in 2005, that the fabrication procedure look too undeterministic. Show how to build the device..? Lots of excitement: Graphene is an excellent conductor Truly 2-dimensional Zhang et al., Nature 438, 201 (2005)

The Scotch Tape Method From Material to Device 1. Need picture of graphite flake

The 2nd Graphene Revolution Putting graphene on to Other Surfaces hBN hBN: Insulating isomorph of graphite B, N atoms occupy A, B sites. Young, Dean graphene on hBN hBN substrates are ultra-flat, and are free of dangling bonds. Order-of-magnitude improvement in quality of substrate-supported graphene. Graphene on hBN: Dean et al, Nature Nanotechnology 5,722 (2010)

Very generic technique! Works for many more materials Graphene on Bi2Se3: Tunnel Junction Graphene Bilayer Graphene Graphene Hexagonal Boron Nitride TMD TI MoS2 hBN

Is it useful? Circuit Integration 1. Need picture of graphite flake How do we move from single device to circuit? Why bother – Silicon technology is great…

Atomically Thin Electronics The Thinnest PN Junction Gate-tunable diode current Gate-tunable photovoltaic response Graphene sandwiching: effective collection of photo-carriers. Lee et al., Kim Group, Nature Nano. 9, 676 (2014)

Put the barrier where you need it Tunneling with hBN Nobel Prizes for Tunneling Device: 1973 (Esaki, Giaever) STM: 1986 (Rohrer, Binnig) E STM: Vacuum is Barrier DOS Devices: Low T / high B Multiple Electrodes Planar Symmetry Very flat Momentum conservation Electrode Barrier Target

Tunneling Device Super-fast component VSD B 1. Need picture of graphite flake Tunnel device is fast: Very short distance traversed

Understanding Tunneling The Quantum Shortcut VSD B Wait for landing? 1. Need picture of graphite flake

Atomically Thin Materials Ultra-thin Superconductors Graphene protects BSCCO Single Unit Cell: Tc = 88K Tsen et al., Nature Phys. AOP (2015) Both systems encapsulated in a globe box Monolayer SC can have very low disorder (unlike granular thin films). Tsen paper: NbSe2 has to be glove-box exfoliated, otherwise there is no SC. Graphene / Graphite is used as a contact, all the device is encapsulated in hBN. NbSe2 Bilayer, Tc = 5.26K Jiang et al., Nature Comm. 5, 1(2014)

Other Opportunities? Positron Trap (b) Graphene Electrode BG TG Top Dielectric From Beam Metal Dielectric Dielectric Metal Bottom Dielectric Positron (c) VBottom (d) VTop Coated by graphene or hbn?? Energy position