ELECTRON FIELD EMISSION OF DIAMOND FILMS DEPOSITED WITH

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Presentation transcript:

ELECTRON FIELD EMISSION OF DIAMOND FILMS DEPOSITED WITH UREA BY HOT FILAMENT REACTOR Laboratório Associado de Sensores e Materiais 1,3 U. A. Mengui, 1 R. A. Campos, 1 K. A. Alves, 2 M. H. M. O. Hamanaka, 1 E. J. Corat, 1 M. R. Baldan 1 INPE, Instituto Nacional de Pesquisas Espaciais, CP 515, 12227-010, São José dos Campos, SP, Brasil. Laboratório Associado de Sensores e Materiais 2 Centro de Tecnologia da Informação Renato Archer - CTI CEP: 13069-901, Campinas, SP, Brasil. Divisão de Mostradores de Informação 3 Universidade Paulista- UNIP, Rod. Presidente Dutra, km 157,5 - Pista Sul, CEP 12240-420, São José dos Campos, SP, Brazil *ursula@las.inpe.br Since the first report on electron emission from chemical vapor deposited (CVD) diamond film in 1991 [1], CVD diamond films have attracted great interest as field emitter materials due to their inherent properties. Diamond films are chemically inert, thermally stable, mechanically hard, besides the negative electron affinity (NEA) [2–3]. In this work, electron field emission properties of microdiamond films modified with urea were studied. Results are shown by Scanning Electron Microscopy (SEM), by micro - Raman and photoluminescence (PL) with argon laser (514.5nm), and by field emission characterization using a diode system with adjustable distance between anode and cathode from CTI/Campinas. Characterization Experimental For diamond growth we used an a mixture of 2 sccm methane, 198 sccm hydrogen, and vapor of a urea solution in methanol (0.5 g in 200 ml). The urea solution was carried by hydrogen gas at a pressure of 1 bar. This solution was maintained at 35oC at 58 Torr. Raman Spectra (a) (b) (c) Raman spectra (514.5 nm) - The feature bands of MCD films are shown: diamond (1332 cm-1), graphite (1550 cm-1) and N-Vs substitutional nitrogen ( 2044-2082 cm-1). HFCVD reactor: (a) External configuration of the reactor, (b) bottom view of the reactor showing the bubbler with its valve and rotameter, and (c) internal configuration of the reactor. Characterization (a) (b) (c) Field emission measurements of MCD/MCD modified urea in comparison MCD conventional diamond. SEM images showed microcrystalline faceted diamond were deposited. (a) an intermediate layer of diamond microstructure with the gas mixture of 98% of H2 and 2% of CH4 was grown on the silicon for 24h ; (b) MCD/MCD with the insertion of urea for 4h and (c) MCD/MCD with the insertion of urea for 9h. Conclusion Raman spectra showed all featured diamond bands and N-Vs center around 2044 and 2082 cm-1. The optical profilometry results showed the roughness in de order 650 nm. The field emission experiments showed for the diamond film not modified by urea a threshold electric field of 13.8 V/m and an emission current density of 47 A/cm2 at an applied field of 24 V/m. For the diamond film modified by urea the values were, respectively, 6.4-6.6 V/m and 45-78 A/cm2 at 8.2-9.2 V/m. The urea modification of CVD microdiamond decreased the threshold field by more than 50 percent in comparison to conventional diamond film growth. Reference Acknowledgements [1] B.C. Djubua, N.N. Chubun, IEEE Trans. Electron Devices 38, 2314 (1991). [2] W. Zhu, G.P. Kochanski, S. Jin, et al., Appl. Phys. Lett. 67 (1995) 1157. [3] F.J. Himpsel, J.A. Knapp, J.A. van Vechten, D.E. Eastman, Phys. Rev. B 20 (1979) 624.