Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Schematic illustration of 1D moisture diffusion
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Schematic illustration of moisture concentration at a bimaterial interface
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Weight gain histories of: (a) EMC A and (b) EMC B, obtained at three temperatures and the humidity environment of 75%RH. Bullets and solid lines indicate the measurement data and corresponding Fickian curves, respectively.
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Diffusivity versus temperature
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Solubility versus temperature
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Solubility versus temperature obtained from four different packaging materials
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Fickian and non-Fickian solutions are compared with experimental data of EMC A obtained at 180 °C
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Overview of CHS measurement procedure using moiré interferometry
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Moiré fringe patterns: (a) null fields obtained from the reference sample; fringe patterns of the test sample at time intervals of (b) zero and (c) 40 h
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Hygroscopic strain versus moisture content (%) obtained from moiré fringes
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Saturated concentration of various packaging polymers versus relative humidity
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Implementation of normalized analogy: (a) bimaterial specimen subjected to an isothermal loading condition and (b) distribution of moisture concentration at t = 3600 s
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: (a) Schematic diagram of simulated geometry and boundary condition for the anisothermal bimaterial case and (b) moisture concentrations at t = 3600 s
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Schematic illustration of: (a) cross section of MEMS devices; and (b) “original” model and (c) effective volume model in a simplified 1D configuration [65]
Date of download: 10/28/2017 Copyright © ASME. All rights reserved. From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review J. Electron. Packag. 2017;139(1):010802-010802-11. doi:10.1115/1.4035598 Figure Legend: Normalized pressure inside cavity as a junction of normalized time