Technology Perspective and results with mHEMTs

Slides:



Advertisements
Similar presentations
B. BOUDJELIDA 2 nd SKADS Workshop October 2007 Large gate periphery InGaAs/InAlAs pHEMT: Measurement and Modelling for LNA fabrication B. Boudjelida,
Advertisements

Jan Geralt Bij de Vaate DS4-T4 Wideband Integrated Antennas DS4-T4 Jan Geralt Bij de Vaate ASTRON.
Design of a Low-Noise 24 GHz Receiver Using MMICs Eric Tollefson, Rose-Hulman Institute of Technology Advisor: Dr. L. Wilson Pearson.
CSICS 2013 Monterey, California A DC-100 GHz Bandwidth and 20.5 dB Gain Limiting Amplifier in 0.25μm InP DHBT Technology Saeid Daneshgar, Prof. Mark Rodwell.
TDP Progress Report, June 4, 2010
Center for Wireless Communications 1 ©Deng, Larson and Gudem, May 16th, 2003 PA Workshop High Efficiency SiGe BiCMOS WCDMA Power Amplifiers With Dynamic.
Differential Amplifiers
Prototype SKA Technologies at Molonglo: 2. Antenna and Front End G.B. Warr 1,2, J.D. Bunton 3, D. Campbell-Wilson 1, R.G. Davison 1, R.W. Hunstead 1, D.A.
Receiver TDP Report to US SKA Consortium Nov 17, 2008, Emphasis in Caltech TDP Meeting the 35K Tsys goal,
Low Power RF/Analog Amplifier Design Tong Zhang Auburn University Tong Zhang Auburn University.
SUPERCAM LNA WITH THE 6LN2C MMIC 03/04/ LN2C CRY V 45mA.
Dec 2010 AAVP Cambridge workshop AAVP AAVS1/2-low demonstrators Jan Geralt Bij de Vaate.
Receiver TDP Report to US SKA Consortium May 22, 2008 Sandy Weinreb, Joe Bardin, Glenn Jones, and Hamdi Mani California Institute of Technology
Antenna, Feed, and LNA Integration S. Weinreb, May 7, 2009, LAX Antenna Working Group Meeting 1.Issues 2.Feed Summary 3.LNA Summary 4.Differential LNA’s.
Cambridge, Dec 2010Considerations for AA-lo LNA Dr Saswata Bhaumik PDRA of: Dr Danielle George The University of Manchester.
Name1 SKA(DS) System Design Aspects 4 th SKADS Workshop, Lisbon, 2-3 October 2008 SKA(DS) System Design Aspects: building a system Laurens Bakker.
1 Wideband LNA for a Multistandard Wireless Receiver in 0.18μm CMOS 指導教授 : 林志明 學生 : 黃世一
Technical Interests on the SKA Noriyuki Kawaguchi National Astronomical Observatory of Japan SKA Workshop November 5, 2010.
Microwave Amplifier Design
C. KOO Millimeter-wave Integrated Systems Lab. RF Power Transistors For Mobile Applications 전기공학부 구찬회.
B. BOUDJELIDA1 UMan LNA Programme 4 th SKADS Workshop, Lisbon, 2-3 October 2008 University of Manchester: Progress on LNA Programme B. Boudjelida, A. Sobih,
Georgina Harris1 2-PAD 4 th SKADS Workshop, Lisbon, 2-3 October Polarisations All Digital Dr Georgina Harris / Prof Tony Brown SKADS System Design.
AA-Low Technical Progress Meeting, October 2012, Medicina, Italy AAVS0 & AAVS0.5: System Design and Test Plan Nima Razavi-Ghods Eloy de Lera Acedo.
Seoul National University CMOS for Power Device CMOS for Power Device 전파공학 연구실 노 영 우 Microwave Device Term Project.
Study of 60GHz Wireless Network & Circuit Ahn Yong-joon.
An Ultra-Wide-Band GHz LNA in 0.18µm CMOS technology RF Communication Systems-on-chip Spring 2007.
A 30-GS/sec Track and Hold Amplifier in 0.13-µm CMOS Technology
Phased Array Feeds John O’Sullivan SKANZ 2012 CSIRO Astronomy and Space Science,
SKA Introduction Jan Geralt Bij de Vaate Andrew Faulkner, Andre Gunst, Peter Hall.
Proposed Versatile 1.2 to 14 GHz Radio Telescope Receiver S. Weinreb, JPL/Caltech, Draft July 5, 2005 Contents 1.Introduction and intended applications.
A NEW METHOD TO STABILIZE HIGH FREQUENCY HIGH GAIN CMOS LNA RF Communications Systems-on-chip Primavera 2007 Pierpaolo Passarelli.
LNA Technologies and Topologies SKADS SKA LNA Technologies and Topologies Saswata Bhaumik PhD Student Dr Danielle George The University of Manchester.
An Ultra-low Voltage UWB CMOS Low Noise Amplifier Presenter: Chun-Han Hou ( 侯 鈞 瀚 ) 1 Yueh-Hua Yu, Yi-Jan Emery Chen, and Deukhyoun Heo* Department of.
RFIC – Atlanta June 15-17, 2008 RTU1A-5 A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology.
MMIC design activities at ASIAA Chau-Ching Chiong, Ping-Chen Huang, Yuh-Jing Huang, Ming-Tang Chen (ASIAA), Ho-Yeh Chang (NCUEE), Ping-Cheng Huang, Che-Chung.
Sanae Boulay, Limelette, Nov 05 th 20091/20 S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs.
RFIC – Atlanta June 15-17, 2008 RMO1C-3 An ultra low power LNA with 15dB gain and 4.4db NF in 90nm CMOS process for 60 GHz phase array radio Emanuel Cohen.
A Unified Approach to Design Distributed Amplifiers Rasit Onur Topaloglu PhD. Student
Amplifiers Amplifier Parameters Gain = Po/Pi in dB = 10 log (Po/Pi)
Final Design Review of a 1 GHz LNA / Down-Converter Charles Baylis University of South Florida April 22, 2005.
© Sean Nicolson, BCTM 2006 © Sean Nicolson, 2007 A 2.5V, 77-GHz, Automotive Radar Chipset Sean T. Nicolson 1, Keith A. Tang 1, Kenneth H.K. Yau 1, Pascal.
Rakshith Venkatesh 14/27/2009. What is an RF Low Noise Amplifier? The low-noise amplifier (LNA) is a special type of amplifier used in the receiver side.
A 20/30 Gbps CMOS Backplane Driver with Digital Pre-emphasis Paul Westergaard, Timothy Dickson, and Sorin Voinigescu University of Toronto Canada.
System noise temperature and G/T ratio
3-Stage Low Noise Amplifier Design at 12Ghz
Dr Danielle Kettle1 LNA progress 4 th SKADS Workshop, Lisbon, 2-3 October 2008 LNA progress.
Integrated Phased Array Systems in Silicon
ngVLA/North America Array JPL Ultra Wideband Receiver Progress
MMIC Design in 0.13µm SiGe BiCMOS Process by Hans Schou and Magnus Pallesen.
Ultra-low Power Components
GaAs Process & Devices Anurag Nigam.
Communication 40 GHz Anurag Nigam.
A High-Dynamic-Range W-band
Input Stages for Radio Systems (Low Noise Amplifiers) (LNAs)
Lets Design an LNA! Anurag Nigam.
Anurag Nigam Senior Designer, NatTel Microsystems Pvt. Ltd.
Basic MOS Amplifiers: DC and Low Frequency Behavior
CSE598A Analog Mixed Signal CMOS Chip Design
Sensitivity, the Challenges
Phased Array Feeds SKANZ 2012 John O’Sullivan
Variable Gain CMOS LNA MOREIRA E SILVA, Paulo Marcio, DE SOUSA, Fernando Rangel Introduction Simulation.
High-linearity W-band Amplifiers in 130 nm InP HBT Technology
TU3E-4 A K-band Low Phase-Noise High-Gain Gm Boosted Colpitts VCO for GHz FMCW Radar applications R. Levinger, O. Katz, J. Vovnoboy, R. Ben-Yishay.
Filtered noise: Chapter 9 Figure 06 Chapter 9 Figure 07.
Technical Foundations & Enabling Technologies – DS4
DS4-T1 FRONT-END TECHNOLOGIES
Jan-Geralt Bij de Vaate
Student Design Competition
S21 (at center frequency) 19 dB
Low-Noise Wide-Band Cooled amplifiers with InP Transistors
Presentation transcript:

Technology Perspective and results with mHEMTs Jan Geralt Bij de Vaate ASTRON

Specification R Schillizi et. al. Sept. ‘07 Tinstrument= 40K (excluding sky noise), goal 30K BW 70MHz – 1.0 GHz (two systems) Survey speed ~1/T2 Sensitivity ~1/T SKADS Workshop 2007

Costing A 9 million element system with a total system cost of 250M € can spend: 1,5 € per LNA per Kelvin improvement (Survey) Or 8,5 € for 5 Kelvin improvement, again for Surveys Given a bare die costs of: 0,5 € for Silicon technologies (only 500 12 inch wafers) 2 € for GaAs technologies (2000 6 inch wafers) Low cost technologies cannot compromise on noise! SKADS Workshop 2007

Technology GaAs PsHEMT / mHEMT SiGe BJT with b0 =100: FMIN~30K CMOS In principle similar to GaAs SKADS Workshop 2007

PsHEMT 0.2um technology OMMIC differential LNA 2109 ASTRON design SKADS Workshop 2007

InP Differential LNA NGST SKADS Workshop 2007

mHEMT 70nm OMMIC technology 250GHz fT Differential design Optional on-chip biasing SKADS Workshop 2007

mHEMT 70nm OMMIC technology 250GHz fT Differential design Optional on-chip biasing SKADS Workshop 2007

mHEMT ATNF01_40LNA_05A, Russel Gough 70nm OMMIC technology Designed for 30-50 GHz band 4-stage low-noise amplifier Transistors: 6-fingers, 90um gate width Bias: Vds = 1.0 V Id = 13 mA SKADS Workshop 2007

ATNF01_40LNA_05A 10 circuits were delivered sample of 4 was measured 1 circuit was unstable (|S11|>1) The performance of remaining 3 circuits was similar Measured gain is greater than modelled Input and output match is poorer than expected SKADS Workshop 2007

SiGe IBM technology 8HP (0.13µm) : sub 0.5dB noise figure possible 0.25dB for 9HP?? (relative) high Rn Good power match possible Limited cooling boosts current gain β: Weinreb 2005 SKADS Workshop 2007

SKADS Workshop 2007

SKA / LOFAR workshop! (or focussed session) vaate@astron SKADS Workshop 2007

Conclusion SKA specifications for AA within reach it seems but… T coupling (<5) (active reflection coefficient) T spill-over, ground noise (<5) T antenna losses (<5) Technology choice will be based on performance Good case for III/V, but also CMOS SKADS Workshop 2007