Written by Whitney J. Wadlow

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Presentation transcript:

Written by Whitney J. Wadlow EE 382M VLSI 1 EE 460R INTRODUCTION TO VLSI DESIGN Lab 1 Demo Fall 2014 Derong Liu & Yibo Lin Written by Whitney J. Wadlow 1 1

Overview Full custom IC design flow Technology: NCSU_FreePDK45 Cadence 2007 design environment HSPICE Lab1a Design tutorial: Inverter design Implement and optimize a 4-bit SRAM cell Lab1b 1K memory array characterization 2 2

Full Custom IC Design Flow Lab1-A Data Preparation Design Rule Check (Calibre) Lab1-B Draw Schematic (Virtuoso) Layout Versus Schematic Check (Calibre) Logic Simulation (Verilog-XL) Pre-layout Simulation (Spectre) Extraction (Calibre) Layout (Virtuoso) Post layout simulation (HSPICE) 3 3 3

Cadence 2007 Environment Use NCFU_FreePDK 45nm library Schematic design Symbol design Layout design Calibre DRC – design rule check LVS – layout versus schematic Extraction 4 4

Cadence 2007 Environment Use NCFU_FreePDK 45nm library Schematic design Symbol design Layout design Calibre DRC – design rule check LVS – layout versus schematic Extraction 5 5

Schematic cds.lib Create your own library Size of PMOS and NMOS NCSU_Device_FreePDK45 4 types of PMOS (use PMOS_VTL) 4 types of NMOS (use NMOS_VTL) Create your own library Based on NCSU_Device_FreePDK45 library, build your circuit. Size of PMOS and NMOS PMOS Width: 240nm, Length: 50nm NMOS Width: 120nm, Length: 50nm 6 6

Schematic Library Manager 7 7

Schematic Example: Inverter 8 8

Symbol It facilitates the hierarchical design Top schematic can use the symbol for a sub-logic block 9 9

Functional Simulation Functional simulation with Verilog-XL No parasitic information No delay information It is for verifying the functionality of your design. Verilog-XL uses a verilog testbench file as the stimulus input 10 10

Pre-layout simulation Pre-layout simulation with SPECTRE It includes the delay information. Example 11 11

Layout It represents planar geometric shape of IC It consists of Poly, Active, N-well, and P-well EXAMPLE NMOS P-Well + Active + Nimplant + Poly = NMOS 12 12

Layout 13 13

Layout DRC (Design Rule Check) It is performed in Calibre using the DRC rule file. If you have errors in DRC, you should modify your layout design according to the error message. The error messages include information about the location and the source of the trouble. The ruler ( type k in the layout window) is very useful. 14 14

Layout DRC example 15 15

Layout Layout Versus Schematic (LVS) Compares your schematic and your layout. Checks if both are identical in terms of connectivity It is performed in Calibre using the LVS rule file. 16 16

Extraction Extracts the parasitic capacitance and resistance from the layout information. It is executed in Calibre using the xRC rule file. The file type of output files is HSPICE type. *.pex.netlist, *.pxi and *.pex 17 17

Extraction Post layout simulation The three output files of the extraction are the inputs for HSPICE. After completing HSPICE, the output waveforms can be checked in CSCOPE. 18 18

Part A and B Overview Lab1a (75%) Lab1b (25%) Implement and optimize a 4-bit SRAM cell Full custom placement and routing Target is to minimize the cell area Schematic level and post layout level simulations Lab1b (25%) 1K memory array characterization Build your model for testing the worst case read delay Spectre simulator 19 19

Lab1a: Full Custom Design Run through the flow with one inverter Follow the Cadence 2007 on-line tutorial step by step Characterize the inverter (two control factors) Output load (100fF, 300fF, 500fF) Slew (input edge transition time, 10ps, 30ps, 50ps) Implement and test the 1-bit memory cell Implement, test and optimize the 4-bit memory cell Optimize for area Simulate for functionality 20 20

Lab1a: 1-bit SRAM Operation 3 data lines : data in (dc), data out (da, db) 3 control lines : write (sc), read (sa, sb) sc = 1 : write (breaks the feedback loop) sc = 0 : read 21 21

Lab1a: 4 – bit SRAM Cell Within the design of the 1-bit SRAM cell Do not use metal 3 Within the design of the 4-bit SRAM cell May use metal 3 VDD rail on the right and GND rail on the left VDD GND W L 22 22

Lab1a: Grading Policy Total score: 75% of Lab1 Inverter characterization: 15% 1-bit memory cell functionality: 30% Area of 4-bit memory: 30% Smallest area == 30% Reduced scores as area increases from the minimum 23 23

Lab1b Model the worst path of 1K memory array 32 bit X 32 bit Schematic view only 1-bit read only memory cell is provided NOR based 5-32 decoder is provided Find out worst case “READ” time Construct high level critical path schematic Simulate output waveform with Spectre Read Vdd/2 delay time from the waveforms 24 24

5-32 Decoder (provided) 25 25

Read Only 1-bit Mcell (provided) 26 26

Memory Cell Access Memory address Memory Array Word line Decoder (is given) 1-bit Memory Cell (given, read only) Bit line Data coming out 27 27

Interconnect Delay Model FAQ How to build model? Memory array access mechanism Interconnect RC (wire RC model) Only part of the memory array is required How to setup the value in the memory cell? What value should it be? Which test pattern gives the longest delay? How to use the Spectre simulator? Detailed tutorial provided in the lab web pages 28 28

Lab1b: Grading Policy Total score: 25% of Lab1 Memory array delay model: 15% Schematic level Simulation correctness: 10% Raw netlist modification Spectre simulation 29 29

Start Early, Submit Early! Early submissions Submit 2 Days Ahead 10% of your score added as a bonus Submit 1 Days Ahead 5% of your score added as a bonus Late penalties -5% per day late Maximum -25% Zero credit after the maximum penalty 30 30

Good Luck! 31