MEMS Two-Phase Vapor Escape Heat Exchanger

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Presentation transcript:

MEMS Two-Phase Vapor Escape Heat Exchanger Milnes David Tarun Khurana Christopher Anderson

Process Flow Diffusion Clean Oxide Growth Al. Sputter Backside Pattern (heaters & sensors) Al Etch Ashing PRX 1000 Clean Backside LTO deposition Backside protect Front-side Oxide Etch (HF) Front-side pattern (channels) Front-side channel etch (STSDRIE) Backside pattern (bond pads) Pad etch

Process Layout Backside pattern (through etch) Through etch (STS DRIE) Final released device Adhesive coat on transfer substrate Contact printing of adhesive Membrane attachment via UV curing Attachment of patterned double sticky tape (vapor channel) Top cover integration

Images of the Heaters and Sensor open bond pads

Typical Defects Shorts (bridging) Voids Scratches – due to handling errors, motivates thicker LTO deposition (5000 A)

Resistance Measurements 4.4 250 ? 401 150 385 506 400 43 389 44 ? 42 383 43 381 410 397 393 423 380 367 5.0 Ground lines = 4.7 ± 0.4  Sensors = 392 ± 15  Heaters = 43 ± 0.8  In all cases resistance is almost twice as high as predicted.

LTO300 Deposition Average dep rate: alternate arrangement = 58 A/min Consecutive arrangement = 40 A/min Average etch rate pad-etch rate: LTO oxide = 3540 A/min Thermal oxide = 400-600 A/min

STS issues STS down for a month, expected to be up by 1st week of Aug. Alternatives Pursued: Getting trained on STS2 (through-etch still not possible) Outside DRIE and machining service vendors American precision dicing (can do through etch features) Laserod laser machining (~ $200 per wafer) ISSYS Honeywell MEMS foundry IMT Investigated UC-Berkeley and UCSB fab Training and qualification time is an issue (about a week in each case) Investigating wet etch options (KOH or TMAH) Requires oxide or nitride as mask Significant undercutting can result in much larger features Changing process flow to perform pad etch first to save time. Created back-up device in Copper.

Design of Copper Device

Thanks! Questions?