High-Speed Optical Interconnections on Electrical Boards Using Fully Embedded Thin-Film Active Optoelectronic Devices Sang-Yeon Cho Department of Electrical.

Slides:



Advertisements
Similar presentations
High power (130 mW) 40 GHz 1.55 μm mode-locked DBR lasers with integrated optical amplifiers J. Akbar, L. Hou, M. Haji,, M. J. Strain, P. Stolarz, J. H.
Advertisements

Flex Circuit Design for CCD Application ECEN 5004 Jon Mah.
An NLTL based Integrated Circuit for a GHz VNA System
Optical sources Lecture 5.
All-Silicon Active and Passive Guided-Wave Components
Solomon Assefa, Nature, March 2010 Reinventing germanium avalanche photodetector for nanophotonic on- chip optical interconnects Jeong-Min Lee
Applications of Photovoltaic Technologies. 2 Solar cell structure How a solar cell should look like ?  It depends on the function it should perform,
Min Hyeong KIM High-Speed Circuits and Systems Laboratory E.E. Engineering at YONSEI UNIVERITY Y. A. Vlasov and S. J. McNab.
Recent progress in lasers on silicon Recent progress in lasers on silicon Hyun-Yong Jung High-Speed Circuits and Systems Laboratory.
CMOS Compatible Integrated Dielectric Optical Waveguide Coupler and Fabrication Jeong-Min Lee High-Speed.
Solar Power Program Clara Paola Murcia S. BS in Electrical Engineering (Universidad de Los Andes) Concentration in Power Systems / Minor in BA Semiconductor.
Optical Interconnects Speeding Up Computing Matt Webb PICTURE HERE.
EE 230: Optical Fiber Communication Lecture 11 From the movie Warriors of the Net Detectors.
G. Roelkens, J. Brouckaert, J. Van Campenhout, D. Van Thourhout, R
Min-Hyeong Kim High-Speed Circuits and Systems Laboratory E.E. Engineering at YONSEI UNIVERITY JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 22, NO.
Jean-Marc Sabattié, Brian D. MacCraith, Karen Mongey,
Radius of Curvature: 900 micron Fig. 1 a.) Snell’s Law b.) Total Internal Reflection a. b. Modeling & Fabrication of Ridge Waveguides and their Comparison.
Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos Donald M. Chiarulli, Steven P. Levitan University of Pittsburgh, USA.
IMEC - INTEC Department of Information Technology WAVEGUIDES IN BOARDS BASED ON ORMOCER  s
Optical Interconnects Speeding Up Computing Matt Webb PICTURE HERE.
Fiber Optic Light Sources
MonolithIC 3D Inc., Patents Pending MonolithIC 3D ICs RCAT approach 1 MonolithIC 3D Inc., Patents Pending.
Overview of course Capabilities of photonic crystals Applications MW 3:10 - 4:25 PMFeatheringill 300 Professor Sharon Weiss.
A Stable Zn-indiffused LiNbO 3 Mode Converter at μm Wavelength STUT Hsuan-Hsien Lee 2, Ruey-Ching Twu 1, Hao-Yang Hong 1, and Chin-Yau Yang 1 1.
RFAD LAB, YONSEI University 4 January 2010 / Vol. 18, No. 1 / OPTICS EXPRESS 96 Vertical p-i-n germanium photodetector with high external responsivity.
Waveguide High-Speed Circuits and Systems Laboratory B.M.Yu High-Speed Circuits and Systems Laboratory 1.
Light Emitting Diode Sumitesh Majumder.
Comparison of various TSV technology
Nano/Micro Electro-Mechanical Systems (N/MEMS) Osama O. Awadelkarim Jefferson Science Fellow and Science Advisor U. S. Department of State & Professor.
Metallization: Contact to devices, interconnections between devices and to external Signal (V or I) intensity and speed (frequency response, delay)
Optical Filter 武倩倩 Outline Introduction to silicon photonics Athermal tunable silicon optical filter Working principle Fabricated device Experiments.
Defect Review in the Photonics Revolution Aaron Lewis Nanonics Imaging Ltd. The Manhat Technology Park Malcha, Jerusalem ISRAEL Tel:
Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.
Min Hyeong KIM High-Speed Circuits and Systems Laboratory E.E. Engineering at YONSEI UNIVERITY
DSODARPA Silicon-based Ion Channel Sensor M. Goryll 1, S. Wilk 1, G. M. Laws 1, T. J. Thornton 1, S. M. Goodnick 1, M. Saraniti 2, J. Tang 3, R. S. Eisenberg.
Honeywell Advanced Photonics Development Overview ATLAS Meeting January 7, 1999 John Lehman Honeywell Technology Center
ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.
2. Design Determine grating coupler period from theory: Determine grating coupler period from theory: Determine photonic crystal lattice type and dimensions.
Ali Javey, SungWoo Nam, Robin S.Friedman, Hao Yan, and Charles M. Lieber Ting-Ta Yen.
Unit-3 FUNDAMENTALS OF FIBER OPTIC COMMUNICATION.
Optical InterLinks LLC (OIL)----- GuideLink ™ Polymer Waveguide Products Multichannel Monolithic Data Network Monitoring Taps Using OIL’s Polymer Waveguide.
Simulation for paper.
Advanced laser and led structures, applications
Power MOSFET Pranjal Barman.
Advanced LIGO Photodiodes ______
Evaluation of Polydimethlysiloxane (PDMS) as an adhesive for Mechanically Stacked Multi-Junction Solar Cells Ian Mathews Dept. of Electrical and Electronic.
Wafer bonding (Chapter 17) & CMP (Chapter 16)
High Q-factor Photonic Crystal Cavities on Transparent Polymers
Four wave mixing in submicron waveguides
Switchable LTCC/Polyimide Based Thin Film Coils
Date of download: 10/15/2017 Copyright © ASME. All rights reserved.
Integrated Semiconductor Modelocked Lasers
10 Gbps Transimpedance Amplifier and Laser Driver in 0.18 um CMOS
Polymer Microrings Integrated With Thin Film InGaAs MSM Photodetectors For Sensor-On-A-Chip Applications Sang-Yeon Cho Electrical and Computer Engineering.
OPTICAL SOURCE : Light Emitting Diodes (LEDs)
Chapter 1 & Chapter 3.
Meeting 指導教授:李明倫 學生:劉書巖.
V. Semiconductor Photodetectors (PD)
Digital Integrated Circuits A Design Perspective
The Role of Light in High Speed Digital Design
Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si
High Power, Uncooled InGaAs Photodiodes with High Quantum Efficiency for 1.2 to 2.2 Micron Wavelength Coherent Lidars Shubhashish Datta and Abhay Joshi.
Layer Transfer Using Plasma Processing for SMART-Wafer
1.3µm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Array Photonic Integrated Circuit MRSEC Program; DMR A feasible.
A Concept: Transmitting and Receiving Fiber Optic Signals with Petabit per Second Capacity Tom Juliano ECE-641 February 20, 2003.
(2) Incorporation of IC Technology Example 18: Integration of Air-Gap-Capacitor Pressure Sensor and Digital readout (I) Structure It consists of a top.
Monolithically Integrated Mach-Zehnder Interferometer Wavelength Converter and Widely-Tunable Laser in InP Milan L. Mašanović, Vikrant Lal, Jonathon S.
Broadband Lateral Tapered Structures for Improved Bandwidth and Loss Characteristics for All-Optical Wavelength Converters Xuejin Yan, Joe Summers, Wei.
Layer Transfer Technology for Micro-System Integration
Broadband Lateral Tapered Structures for Improved Bandwidth and Loss Characteristics for All-Optical Wavelength Converters Xuejin Yan, Joe Summers, Wei.
Presentation transcript:

High-Speed Optical Interconnections on Electrical Boards Using Fully Embedded Thin-Film Active Optoelectronic Devices Sang-Yeon Cho Department of Electrical and Computer Engineering Duke University, Durham, North Carolina 27708, USA

Outlines Motivations Backgrounds Device fabrication and integration processes Experimental and theoretical results of coupling efficiencies for different integration structures. Speed measurement results (impulse response and eye-diagram). Optical signal distributions using MMI couplers. Thin film laser with integrated optical waveguides. Optical interconnections on PWB. Conclusions

Motivations Fully Embedded Optical Interconnections Electrical interconnections: - Impedance Matching Issues - Electromagnetic Interference - High Power Consumption - Frequency Dependent Characteristics (Skin effects) Optical interconnections: - No EMI, Easy Design, Frequency Independent Characteristics - Optical Alignment Issues - Fabrication Compatibility and Integration Density Issues Fully Embedded Optical Interconnections using Thin Film Active OE Devices

Thin film edge emitting laser Proposed Fully Embedded Optical Interconnections Using Thin Film Active OE Devices Waveguide Transmitter Circuit Receiver Circuit Receiver Circuit Receiver Circuit Rec’r / uP Circuit Thin film edge emitting laser Embedded Thin Film PD Substrate Interconnection substrates and boards face latency and skew problems for clock and critical data signals Optical interconnections can address these problems if optical signal distribution can be added at low cost to the system One approach is to embed the optical active devices in the waveguide on the board or substrate

Backgrounds: Inverted Metal-Semiconductor-Metal Photodetector MSM Advantage: Low capacitance per unit area compared to typical PIN PDs MSM Disadvantage: Shadowing by interdigitated electrodes reduces responsivity Inverted (I-) MSM: By inverting, low capacitance per unit area is maintained and responsivity is dramatically improved because the fingers are on the bottom Contact pad Metal electrodes Semiconductor

Backgrounds: How the I-MSM Works +5 V 0 V Incident photons Electric field line Lines of equipotential EHP #1 EHP #2 EHP #3

Heterogeneous Integration Process for Embedded Thin Film Devices Substrate removal using selective wet etching Mesa etching to stop selective etch layer defines separate devices Initial device fab on wafer on epilayer surface Thin film device bonding onto a host substrate or IC using a transfer diaphragm: single device or array of devices

Embedded I-MSM in Optical Waveguide Process Spin coating of waveguide cladding material and CMP planarization step Inverted MSM on test probing pad Spin coating of waveguide core material Optical waveguide channel patterning with dry etch process Ultem SiO2 I-MSM BCB Si

Design and Fabrication Issues Design of Integration Structure - Optical Signal Coupling - High Speed Operation Device Fabrication and Integration Process - Thermal Stability Issues - Planarization Issues

Optical Signal Couplings for Embedded Structures Waveguide to Thin Film Photodetector Evanescent Field Coupling Direct Coupling Thin Film Laser to Waveguide Non-Embedded Coupling Embedded Coupling

Calculation Results for Direct Coupling Structures

Calculation Results for Evanescent Field Coupling Structures

Temperature Characterization of Embedded I-MSM PDs in Polymer Waveguides I-MSM dark current was severely degraded by thermal cure process for waveguide polymers New Schottky metallization (Pt/Ti/Pt/Au) and thermal cure process utilized to preserve dark current of I-MSM; measured dark current results using new metallization shown at left as a function of thermal processing time at 250 oC Measured for 15 hours at 250 oC

Characterization of Polymer Optical Waveguide (Fiber Scanning Method)

Measured Propagation Loss using Fiber Scanning Method Propagation Loss at l= 1.3 mm: 0.36 [dB/cm] (3.9 mm BCB/3 mm SiO2/Si)

Embedded I-MSM PDs in Polymer Waveguides: Top Views Embedded Thin-Film I-MSM PD Electrical Metal Contact Pads Polymer Waveguide

Embedded I-MSM PD in a BCB Polymer Waveguide Direct coupling structure(3.9 mm BCB/PD/3 mm SiO2) Coupling Efficiency: Theoretical Result: 59.6%, Experimental Estimate: 52.2%

Embedded I-MSM PD in a BCB Polymer Waveguide Direct coupling structure(5.3 mm BCB/PD/1 mm BCB/3 mm SiO2) Coupling Efficiency: Theoretical Result: 56.4%, Experimental Estimate: 52.4%

Embedded I-MSM PD in an Ultem/BCB Polymer Waveguide Evanescent Field coupling structure (1.8 mm Ultem/0.2 mm BCB/PD/3 mm SiO2) Coupling Efficiency: Theoretical Result: 19.80%, Experimental Estimate: 9.39%

Electrical Impulse Response Setup for an Embedded I-MSM PD in a Polymer Waveguide

Electrical Impulse Response for an I-MSM PD Embedded in a Polymer Waveguide Integration Structure (5.3 mm BCB/PD/ 1 mm BCB/3 mm SiO2/Si) Electrical Pulse Response: 16.73 ps (FHWM) at 5V. Size of detection area = 100 mm by 150 mm

Fully Embedded Optical Interconnections integrated with Electrical Interface Circuits Eye Diagram at 100 Mbps A Si CMOS TIA A Commercial Si-Ge TIA from Maxim designed for 2.5 Gbps operation Embedded MSM PDs in Polymer Waveguide with Transimpendace Amplifiers: Demonstration of Chip-to-Chip Embedded Optical Interconnections

2.5 Gbps Optical Interconnect Chip picture with an embedded I-MSM PD in a Polymer Waveguide Eye diagram at 1 Gbps and 2.5 Gbps

Balanced Optical Signal Distributions Using Polymer MMI Couplers Applications: Global Clock Distributions Point-to-multipoint Signal Distributions

Infrared Imaging Setup

Fabricated MMI Couplers: 1by 8 and 1 by 16 Signal Splitters Calculated Outputs Using FD BPM at 1.55 mm Measured Infrared Outputs 1 by 8 and 1 by 16 MMI

1x4 MMI Coupler With an Embedded 1x4 MSM Photodetector Array: Photomicrographs Embedded MSM PD array Dimension for the MMI region: 160 mm wide, and 7610 mm long Photoimageable Toray polymer used to create MMI coupler.

Calculated and Measured Results for the Fabricated 1x4 MMI coupler Output waveguides: 20 mm wide and 20 mm separation (no PDs in this sample). The calculated maximum power imbalance: 0.17%.

DC Characteristics of the Embedded 1x4 PD Array Device #4 Device #3 Device #1 Device #2

Measured Electrical Response From Each Embedded PD Excellent balance from the MMI coupler Very uniform embedded MSM PD response

Thin Film InP/InGaAsP MQW Gain-Guided Lasers (5 mm thick) MQW laser 300 µm width Cleaved laser facet 20 µm stripe p-contact 400 µm cavity length

Characterization of Thin Film InP/InGaAsP MQW Gain-Guided Lasers L-I curve and near field pattern at 40 mA drive current – it lases!

Embedded Point to Point Optical Interconnections InGaAsP thin film laser, polymer waveguide, embedded thin film InGaAs photodetector; test results

Embedded Optical Interconnections on PWB Thin film InGaAs-based photodetector (PD) embedded in an optical waveguide core High temperature PWB substrate BCB planarization layer PSB-K1 waveguide cladding layer BCB waveguide core layer PWB substrate Planarization layer: BCB Core Layer: BCB Cladding layer: PSB-K1 PD

Challenges for PWB Compatible Optical Interconnect Integration Higher heat resistance PWB substrates High temp. waveguide process (~ 250 oC) Smooth surface to minimize scattering of the guided lightwave Surface roughness [mm order] of PWB may scatter the guided lightwave, causing propagation loss Adhesion and delamination of PWB/cladding/core layers

PWB Materials & Surface Planarization Commercially available PWBs Thickness: 1.6 mm Woven glass cloth + Impregnated resin Sufficient heat resistance for waveguide process High Tg FR-4 with inorganic filler Cyanate Ester with inorganic filler Cyanate Ester Polyphenylene Oxide High Tg FR-4 2mm Planarized with BCB layer 16 mm BCB planarization layer

Surface Profile and Planarization for PWB 1. Surface Roughness of PWB Rough surface Long period(~few mm) Middle period(~500mm) Short period(~10mm) 2. Planarization using spun-on BCB (0.2 mm over 500 mm)

Waveguide Materials Low temp. processing waveguide materials Cladding: Polysiloxane (PSB-K1, Toray industry) Refractive index 1.44 at l = 1.3 mm Low optical loss (less than 0.1 dB/cm @1.3 mm) Curable at 250 oC in air Core: Benzocyclobutene (Cyclotene, Dow chemical) Refractive index 1.54 l = 1.3 mm Low optical loss (-0.3 dB/cm l = 1.3 mm) Curable at 250 oC in nitrogen

Effects of Planarization Typical surface profile before & after planarization Waveguide loss comparison measured by fiber scanning method High Tg FR4(1) Non-planarized BCB Planarized BCB Si wafer Surface roughness +/-0.25[mm] +/- 0.15 [mm] +/-0.05 [mm] Waveguide loss Cladding:PSB(12 mm)/Core: BCB(4 mm) 1.4 [dB/cm] 0.56 [dB/cm] 0.49 [dB/cm]

Embedded Thin Film I-MSM PD Embedded thin film MSM PD in waveguide on PWB substrate Top view Top view (infra red image) Waveguide (100mm) PD (150X300mm) Responsivity of the embedded thin film MSM PD Measured responsivity :0.64A/W at l = 1.3 mm

DC Characteristics and Impulse Response Measured FWHM of the impulse response was 22 psec. Thus, the demonstrated optical interconnection with the large (150 X 300 mm2) PD can be used in high speed interconnection at around 10 Gbps.

Conclusions Evanescent field and direct coupling to embedded I-MSM PDs in optical waveguides have been demonstrated and fully characterized. The embedded MSM impulse response was measured. ( FWHM: 16.73 ps for 100 mm by 150 mm detection area) The eye-diagram of the embedded PD has been measured at 2.5 Gbps. Balanced optical signal distributions have been demonstrated using MMI couplers with embedded PD array. Embedded Thin film edge emitting lasers in polymer waveguide for optical interconnections have been demonstrated. Optical interconnections using thin film embedded PDs and polymer waveguides on PWB substrates have been demonstrated. (Measured FWHM of electrical response: 22 ps for 150 mm by 300 mm detection area).