Very High Frequency Two-Port Characterization of Transistors

Slides:



Advertisements
Similar presentations
Page 1 Group/Presentation Title Agilent Restricted 8 January 2014 Remove this slide before customer presentation This is the slide set that should be used.
Advertisements

Compact IGBT Modelling for System Simulation Philip Mawby Angus Bryant.
CONTROLLABLE SWITCHES
Insulated Gate Bipolar Transistors (IGBTs)
LEES A VHF Resonant Boost DC/DC Converter Justin Burkhart - Advisor: David Perreault Department of Electrical Engineering and Computer Science : Project.
NXP Power MOSFET spice models Quick introduction Phil Ellis April 2015.
Study at Mid Sweden University1 High Speed Switched Mode Power Supplies Kent Bertilsson Mid-Sweden University SEPS Technologies AB Small Efficient.
Pinched Hysteresis Loops of Two Memristor SPICE Models Akzharkyn Izbassarova and Daulet Kengesbek Department of Electrical and Electronics Engineering.
IC Interconnect Modeling Dr. Paul Van Halen PROBLEM  Resistive, capacitive and inductive effects in circuit interconnect.
Fundamentals of Power Electronics 1 Chapter 19: Resonant Conversion 19.4 Load-dependent properties of resonant converters Resonant inverter design objectives:
CMOS Technology Characterization for Analog and RF Design Author : Behzad Razavi Presenter : Kyungjin Yoo.
Power Semiconductor Devices
Fundamentals of Power Electronics 1 Chapter 19: Resonant Conversion Announcements Homework #2 due today for on-campus students. Off-campus students submit.
Fundamentals of Power Electronics 1 Chapter 19: Resonant Conversion Upcoming Assignments Preparation for Lecture 2: Read Section 19.1, Sinusoidal analysis.
Resonant Boost Converter Design Justin Burkhart April 15, 2009.
Microwave Amplifier Design Blog by Ben (Uram) Han and Nemuel Magno Group 14 ENEL 434 – Electronics 2 Assignment
Power Electronics and Drives (Version ) Dr. Zainal Salam, UTM-JB 1 Chapter 3 DC to DC CONVERTER (CHOPPER) General Buck converter Boost converter.
A Wideband CMOS Current-Mode Operational Amplifier and Its Use for Band-Pass Filter Realization Mustafa Altun *, Hakan Kuntman * * Istanbul Technical University,
D ESIGN AND I MPLEMENTATION OF THE D IGITAL C ONTROLLER FOR A F UEL C ELL DC-DC P OWER C ONVERTER SYSTEM O.A. A HMED, J.A.M. B LEIJS.
Copyright ©2011 by Pearson Education, Inc. publishing as Pearson [imprint] Introductory Circuit Analysis, 12/e Boylestad Chapter 20 Resonance.
Microwave Amplifier Design Blog by Ben (Uram) Han and Nemuel Magno Group 14 ENEL 434 – Electronics 2 Assignment
Modeling of the Memristor in SPICE Introduction In 1971, professor Chua predicted the existence of the fourth circuit element – memristor [3]. The memristor.
MOSFET Modeling for RF Circuit Design Kenneth Yau MASc Candidate Department of Electrical and Computer Engineering University of Toronto Toronto, ON M54.
Undergraduate Research Project Hybrid Gate Driver Parasitic Extraction Sponsor: CPES George Suárez Martínez Advisors: Manuel Jiménez & Miguel Vélez-Reyes.
Achieve a New Type Frequency Divider Circuit and Application By MOS-HBT-NDR Y.K. LI, K.J. Gan, C. S. Tsai, P.H. Chang and Y. H. Chen Department of Electronic.
S. -L. Jang, Senior Member, IEEE, S. -H. Huang, C. -F. Lee, and M. -H
ENE 490 Applied Communication Systems Lecture 3 Stub matching, single- and two-port networks DATE: 27/11/06.
18/10/20151 Calibration of Input-Matching and its Center Frequency for an Inductively Degenerated Low Noise Amplifier Laboratory of Electronics and Information.
Lumped versus Distributed: A component must be considered as distributed when the physical dimensions of an element become significant with respect to.
Massachusetts Institute of Technology Laboratory for Electromagnetic and Electronic Systems Group Meeting July 21, 2009 Justin Burkhart.
THE ELECTROTHERMAL ANALYSIS OF A SWITCHED MODE VOLTAGE REGULATOR Krzysztof Górecki and Janusz Zarębski Department of Marine Electronics Gdynia Maritime.
A 30 GS/s 4-Bit Binary Weighted DAC in SiGe BiCMOS Technology
Centro de Electrónica Industrial (CEI) | Universidad Politécnica de Madrid | | This work presents a behavioral-analytical hybrid.
ENE 428 Microwave Engineering
BASIC SEMICONDUCTOR ELECTRONIC CIRCUITS Introduction of two basic electronic elements: diode and transistor LEARNING GOALS Diodes structure and four modeling.
19.4 Load-dependent properties of resonant converters
EKT 441 MICROWAVE COMMUNICATIONS CHAPTER 3: MICROWAVE NETWORK ANALYSIS (PART 1)
1 Eeng224 Chapter 9 Sinusoids and Phasors  Delta-to-wye and wye-to-delta conversions  Phase Sifters.  AC Bridges.  Problem Solutions Huseyin Bilgekul.
M. Atef, Hong Chen, and H. Zimmermann Vienna University of Technology
The Working Theory of an RC Coupled Amplifier in Electronics.
Types Of Thyristors And Their Applications
بحث مشترك منشور فى مؤتمر دولى متخصص (منشور ، التحكيم علي البحث الكامل) B. M. Hasaneen and Adel A. Elbaset البحث التاسع 12 th International Middle East.
Gate Turn On Turn Off Thyristors. What is a thyristor? Thyristors are power semiconductor devices used in power electronic circuits They are operated.
Macom RF switches radiation-test results
of Switching-Mode Class-E Techniques
POWER TRANSISTOR – MOSFET Parameter 2N6757 2N6792 VDS(max) (V)
DOUBLE INPUT Z-SOURCE DC-DC CONVERTER
DOUBLE INPUT Z-SOURCE DC-DC CONVERTER
DOUBLE INPUT Z-SOURCE DC-DC CONVERTER
IG BASED WINDFARMS USING STATCOM
Chapter 9 Sinusoids and Phasors
Chapter 2 Overview of Power Semiconductor Devices
Basic MOS Amplifiers: DC and Low Frequency Behavior
IGBT.
Power Semiconductor Systems I
Islamic University of Gaza
OPS - Energy Harvesting
EKT 356 MICROWAVE COMMUNICATIONS
Device Structure & Simulation
DOUBLE INPUT Z-SOURCE DC-DC CONVERTER
At National Institute of Technology, Meghalaya, Shillong, India
ENE 429 Antenna and Transmission Lines Theory
A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique Microwave and Wireless Components Letters, IEEE Volume 17,  Issue.
Ali Fard M¨alardalen University, Dept
Vibration Energy Harvesting Circuit to Power Wireless Sensor Nodes
Overview of Power Semiconductor Switches
Power Computations Power and Energy
Xiou Ge Motivation PDN Simulation in LIM Real Example Results
Introduction Dr. Kakade K.P.
Overview of Power Semiconductor Switches
Presentation transcript:

Very High Frequency Two-Port Characterization of Transistors Tekst og Streger i 100% farve – Baggrund i 90% Transparent. tony lopez Very High Frequency Two-Port Characterization of Transistors Authors: Jens Christian Hertel, Yasser Nour, Ivan H. H. Jørgensen & Arnold Knott Abstract: To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors. Two-port theory: MOSFET modelled as per fig 1. [1] Protection circuitry implemented, blocking DC voltage on equipment [2]. Drain-Source voltage biased through a 10mH choke (LBFC) as well as a large resistance for proper AC blocking capabilities. Network derived through ABCD matrices. Formulas for capacitances and resistances, from the Z-results of a two-port S-parameter solution. Capacitances and Resistances are found through results of the Z-parameters: Introduction: Resonant power converters are becoming more interesting for on-chip power solutions. As the switching frequency increases, the parasitic elements of the transistors are used as part of the circuit. Proper characterization is needed. The two-port solution is an interesting method, as it is a one-shot relatively easy method Fig 1. MOSFET in Two-port Characterization

Very High Frequency Two-Port Characterization of Transistors Tekst og Streger i 100% farve – Baggrund i 90% Transparent. Very High Frequency Two-Port Characterization of Transistors Authors: Jens Christian Hertel, Yasser Nour, Ivan H. H. Jørgensen & Arnold Knott Conclusion: The two-port S-parameter measurements is advantageous to the one-port measurement, as it is a one-shot measurement. The two-port results matches the datasheet values on capacitances. Resistance values are similarly within range of expectation. However, Ross measurements should be confirmed with a one port setup. Future work also consist of including this in a loss model simulation and measurements in a VHF converter.

Very High Frequency Two-Port Characterization of Transistors Tekst og Streger i 100% farve – Baggrund i 90% Transparent. Very High Frequency Two-Port Characterization of Transistors Authors: Jens Christian Hertel, Yasser Nour, Ivan H. H. Jørgensen & Arnold Knott References: [1] A. D. Sagneri, D. I. Anderson, and D. J. Perreault, “Optimization of transistors for very high frequency dc-dc converters,” 2009 IEEE Energy Conv. Congr. Expo., pp. 1590–1602, 2009. [2] Z. Chen, “Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices,” 2009. [3] S. H.-M. H. M. Jen, C. C. C. Enz, D. R. R. Pehlke, M. Schroter, and B. J. J. Sheu, “Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz,” IEEE Trans. Electron Devices, vol. 46, no. 11, pp. 2217–2227, 1999. Additional results: Looking at contour plots of the capacitance reveals interesting things: CRSS and COSS are stable over frequency. CISS increase with frequency. However, effect most notably over voltage. Measurement setup seems to have an unwanted effect around 30-40 MHz. Corresponds to unknown inductance in the measurement setup.