Structure and Operation of the MOSFET

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Structure and Operation of the MOSFET 14 and 16 March 2016

FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA

MOS Inversion Layer - - - - - - - - - - - - + - Metal layer Oxide layer P-type + + + + + + + + + + + + + n-type inversion layer With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer Threshold voltage VT: applied gate voltage required to achieve the threshold inversion 10 10

Voltage-Current Relationship of NMOS (1) 19 19