Silicon Epitaxial Wafer for Discrete

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Presentation transcript:

Silicon Epitaxial Wafer for Discrete Specification for Products Product item: 150 mm EPI WAFER Shinetsu Semiconductor Co. ltd Isobe Factory Issue date 2014. 6. 25 Spec. Doc. No. Updated 2014.7.10

Substrate p-type (Boron) ------------------ 45-50 mm Chemical Mechanical Polish Acid etch (No oxide layer)

Epitaxial growth layer P-type (Boron) Resistivity 500 – 2500 Ωcm Epi layer thickness 115-145 µm 115-145 Epitaxial layer measurement Method: sampling (1 wafer out of 12 each), angle-grinding, with SR method. Resistivity Acceptance criteria: value at center is within the spec. Thickness Method: sampling, with infra-red interferometry (FTIR) method. Acceptance criteria: 5 points (center, 4 at 10 mm perimeter) within spec. 3.7 Epi layer thickness uniformity in a wafer: average value +/-5% 3.8 Epi layer thickness uniformity wafer-to-wafer: average value +/-5%

Datasheet Substrate wafer diameter, resistivity, thickness, crystal orientation, OF length, dopant nominal values Customer name Product name Epitaxial layer dopant type, resistivity, thickness nominal value Lot no. Epitaxial layer resistivity, thickness measured values Product quantity Delivery date

Packaging Quality assurance 6 months after delivery Process control data and monitor wafers will be kept for one year.

Reference material -1