Chapter 4 Interconnect.

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Presentation transcript:

Chapter 4 Interconnect

Polysilicon for Local Connections Transistor (2l x 4l) WL [0] GND WL [1] ROM Layout Polysilicon WL [2] Metal1 GND Diffusion WL [3] Metal1 on Diffusion Copyright © 2005 Pearson Addison-Wesley. All rights reserved. 2

A Look on IC Interconnections Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Metal for Long Connections Intel 4004 (‘71) Copyright © 2005 Pearson Addison-Wesley. All rights reserved. Cortesia Intel

Metal Multi-layer Copyright © 2005 Pearson Addison-Wesley. All rights reserved. Copyright © 2005 Pearson Addison-Wesley. All rights reserved. 3-5

Design Rules Manufacturer´s reliability limits - E.g. scalable l rules Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Electrical Parameters? Design Rules How about Electrical Parameters? Manufacturer´s reliability limits - E.g. scalable l rules Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Electrical Parameters 1 L 2 Wire length L1 < L2 R 1 R 2 C 1 C 2 For wire width W1= W2, what is the relation between R1 and R2 (or C1 and C2)? Why ? Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Interconnect Geometric Parameters w: width l: length t: thickness h: height (to next conducting layer) s: spacing w+s: pitch t/w: aspect ratio current Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Geometries in Six Metal Layers (t/w) longer Current technoloies: high resitance (l >> t or w) -high capacitance (h and s small) (h) (h) (h) (h) (h) shorter (h) Top-down Side-by-side Remember h is the inter layer distance!!! Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Geometries in Six Metal Layers (t/w) longer Pitches: Metal 6– 1,72 mm -Metal 1 – 0,5 mm (h) (h) (h) (h) (h) shorter (h) Copyright © 2005 Pearson Addison-Wesley. All rights reserved. 4-11

W-L based Resistance ; r: material resistivity - since t is a technology parameter: R is the sheet resistance (tech. parameter) I I Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Metal Resistivity Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Sheet Resistance Values Why does R decrease? Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Vias and Resistance Reduction For vias, typical R is 2 to 20 W Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Fringing Fields : classic parallel plate capacitance There exist more exact (complex) empirical formulas to take into account the fringing effects fringing effect bottom plate effect Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Multilayer Capacitance Model 1 Upper-bound capacitance value: to consider the upper e lower layer as a substrate plate (conservative calculus) Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Example for Model 1 Obs. w and s are given as multiples of the minimum values (design rules) to the layer. This number increases for higher level layers!! Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Example for Model 1 Ex. by design rules - for Metal 1, w minimum is 3l= 3X (180/2)= 270nm For Metal 6, w minimum is 10l= =900nm Also, the larger the width w of the plate, the larger the capacitance. Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Multilayer Capacitance Model 2 Lower-bound capacitance value: to consider the substrate below and nothing above (optimistic calculus) Layer n Substrate Copyright © 2005 Pearson Addison-Wesley. All rights reserved. 4-20

Example for Model2 Obs. w and s are given as multiples of the minimum values (design rules) to the layer. This number increases for higher level layers!! Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Example for Model2 Ex. by design rules - for Metal 1, w minimum is 3l= 3X (180/2)= 270nm For Metal 6, w minimum is 10l= =900nm Also, the larger the width w of the plate, the larger the capacitance. Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

Metal2 Example Model 1: lower effect for s higher effect for w - higher effect for s lower effect for w Copyright © 2005 Pearson Addison-Wesley. All rights reserved.