Heat Transfer in Nanoelectronics by Quantum Mechanics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong Enter speaker notes here. 1 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Introduction Today, Fourier’s equation based on classical physics is routinely applied to heat transfer in nanoelectronics - resistors, capacitors, and inductors - having submicron dimensions. However, unphysical results are found. Memristors require a undefined source of space charge ( Williams – Stanford ) Resistance change in PCRAM devices caused by melting ( Goodson – Stanford ) 1/f noise is created by free electron collisions ( Hooge Relation – Philips Research ) [1] L. O. Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, pp. 507–519, 1971. 2 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

QED = Quantum electrodynamics Proposal Heat transfer in nanoelectronics is a QM effect that conserves Joule heat by creating QED photons instead of increasing temperature that produce charge by the photoelectric effect. QM = Quantum Mechanics QED = Quantum electrodynamics In this talk, I argue QM creates charge in nanoelectronics instead of the classical increase in temperature 3 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Theory 4 Heat Capacity of the Atom Conservation of Energy TIR Confinement QED Induced Heat Transfer 4 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Heat Capacity of the Atom Classical Physics (kT > 0) kT 0.0258 eV QM (kT = 0) Nanostructures In nanostructures, QM requires atoms to have zero heat capacity 5 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Conservation of Energy Lack of heat capacity by QM precludes Joule heat conservation in nanoelectroncs by an increase in temperature, but how does conservation proceed? Proposal Absorbed EM energy is conserved by creating QED photons inside the nanostructure - by frequency up or down - conversion to the TIR resonance of the nanostructure. TIR = Total Internal Reflection 6 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

TIR Confinement Since the refractive index of nanoelectroncs is greater than that of the surroundings, the QED photons are confined by TIR Nanostructures ( films, wires, etc) have high surface to volume ratio, but why important? By QM, EM energy absorbed in the surface of nanostructures provides the TIR confinement of the QED photons. Not a mechanical effect as in piezoelectronics of Ag nanowires Wang (8568) QED photons are spontaneously created by Joule heat dissipated in nanoelectronics. Simply, f = c/  = 2nd E = hf For a spherical NP having diameter D,  = 2D 7 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

QED Heat Transfer 8 QED Photons Charge T = 0 Phonons       QED Photons Charge   T = 0 Phonons   8 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Response 9 QED Photons and Excitons Exciton Response Resistance and Current 9 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

QED Photons and Excitons QED Photon Rate   P = Joule heat E = QED Photon energy  = Absorbed Fraction Exciton Rate   Y = Yield of Excitons / QED Photon 10 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

For memristors, V = Vo sin t. Exciton Response Where, QE and QH are number electrons and holes, V is the voltage E and H are electron and hole mobility   Electrons Holes For memristors, V = Vo sin t.     For Ovshinsky effect and 1/f Noise, V = Vo, 11 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Resistance and Current    = Conductivity  = Resistivity     12 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Applications 13 Memristors Ovshinsky 1/f Noise Landauer Limit Heat Dissipation 13 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Memristors 14 QM creates Space Charge to change Memristor resistance d = 50 nm , GST mobility H = 2x10-6 cm2/V-s QM creates Space Charge to change Memristor resistance ( HP claims Oxygen vacancies ) 14 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Ovshinsky Effect 15 PCRAM resistance changes from QM charge Alq3 Mobility  = 2x10-5 cm2/V-s, Vo = 1 V, Ro = 1 M PCRAM resistance changes from QM charge ( Stanford claims melting ) 15 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

1/f Noise in Nanowires Step in Charge  Step in Current  Step in Power Fourier Transform of Step in Power gives 1/f Noise /2 - /2 X(t) t    QM create holes as current enters nanowire ( Hooge relation based on free electrons ) 16 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Landauer Limit The Landauer limit gives the minimum possible amount of thermal energy to erase one bit of information from memory. Classically, the Landauer limit is defined as kT  ln 2 QM requires kT to vanish in nanoelectroncs. What this means is the Landauer limit vanishes No heat is dissipated in erasing memory. Conference Papers by Lambson (8580) and Snider (7544) But QM creates charge  excessive 1/f noise 17 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Heat Dissipation QED induced heat transfer that conserves Joule heat by creating charge instead of increasing the temperature of nanoelectronics is of importance in nanocomputing Provided interconnects are also submicron, melting does not occur by QM But charge created increases the 1/f noise. Perhaps, the QED induced charge can be used to power the computer? 18 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Conclusions By QM, submicron nanoelectronic circuit elements and interconnects do not increase in temperature because Joule heat is conserved by the creation of charge. QM negates the long-standing Landauer limit as the kT energy of the atom vanishes at the nanoscale. Like PCRAM devices, there is no temperature change or melting. However, the QED induced charge may significantly increase the 1/f noise. 1/f noise has nothing to do with a large number of free electrons by Hooge’s theory, but rather on the creation of small numbers < 100 holes by the photoelectric effect from QED induced EM radiation. 19 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012

Questions & Papers Email: nanoqed@gmail.com http://www.nanoqed.org Enter speaker notes here. 20 IEEE 12th Inter. Conf. on Nanotechnology: Inter. Conv. Ctr., Birmingham UK, Aug.20-23, 2012