E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis

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Presentation transcript:

SiC influence on x-ray measurements of GaN films compared with photoluminescence and electrical data E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis North Carolina State University D.S. Katzer, H Dietrich Naval Research Labs Ulrich Schwartz Universität Regensburg February 12, 2002

Topics of discussion Background SiC wafer variability SiC influence on GaN x-ray data Wafer mapping as a solution to SiC influence Extraction of reliable and repeatable x-ray data Do x-ray map results correlate to PL and electrical results?

Typical SiC Wafers SiC FWHM

SiC XRD correlation with GaN XRD

SiC/GaN FWHM Relationship GaN FWHM not influenced by SiC

GaN Thickness Data

AlN Buffer Layer Changes

AlN vs AlGaN Buffer Layers

PL maps vs. X-ray maps

Electrical results – Mobility vs Resistivity

Electrical results – Mobility vs Bulk Carrier Concentration

Electrical results – Mobility

Electrical results – Resistivity

Electrical results – Carrier Concentration

Why isn’t there a correlation? XRD vs PL X-ray measurements are bulk measurements PL measurements are more localized Correlations are not found because of scale difference XRD vs Electrical Data Both measurements are large area Electrical results are not sensitive to domain tilting that is observed via XRD This x-ray technique is not useful in prediction of electrical results