TE4862 Thyratron Power Triggering System for the CERN Kicker Systems

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Presentation transcript:

TE4862 Thyratron Power Triggering System for the CERN Kicker Systems E. De Nicolas, E. Carlier TE 4862

What is a kicker magnet? Kickers are fast pulsed magnets used to switch a particle beam between two paths Types of kicker magnets: Injection: Merge two beams into one single line Extraction: Kick the beam out of an accelerator TE 4862

What is a Thyratron? Switch with similar operating characteristics as the thyristor (SCR) Based on gas ionization technology Suitable for high power applications with short switching times Thyristor Thyratron TE 4862

Objective of this project Pulse Forming Network Thyratron Kicker magnets Trigger Triggering System Analysis of the different types of Thyratron power triggering systems currently in operation across the whole accelerator complex Design, develop and prototype of a new system compatible with all the different existing configurations TE4862

Systems currently in operation Power Mos HV Trigger Amplifier 1600V IGBT Thyratron Trigger 400V IGBT Thyratron Trigger Voltage 3500 1600 400 Current 70 32 12 Tfall <50ns <300ns Tdelay <250ns Wide range of output voltages: 3500V - 400V Worst Case Scenario: Power Mos HV Trigger Amplifier TE4862

New Thyratron Trigger Thyratron Grid Mosfet trigger SCR Trig_IN DC/DC Converter Resonant Power Supply Thyratron Grid Line Mosfet trigger SCR Based on Power Mos HV Trigger Amplifier Trig_IN Adapt the output pulse voltage with the DC/DC converter First step is design the Mosfet trigger TE 4862

Current Mosfet Trigger Vo=3500V Io~70A Tfall<50ns Tdelay~250ns 4 Mosfets in Series Balance voltages in the mosfets TE 4862

Mosfet vs IGTB technology Isolated Gate Bipolar Transistor Combination of Bipolar Transistor and Mosfet Voltage drive device like the Mosfets Higher Voltages than Mosfets Higher Currents than Mosfets Less speed than Mosfets TE 4862

New ‘Mosfet Trigger’ prototype Only one switch!! TE 4862

New “Mosfet” Trigger prototype Minimum gate resistant on the IGTB Select IGTB Gate Voltage TE 4862

New “Mosfet” Trigger prototype 24 V is the optimal point TE 4862

New “Mosfet” Trigger Vo=3500V Io~70A Tfall<50ns Tdelay<100ns One IGBT IXA40I4000KN 24V IGTB Gate Voltage Minimum Gate Resistance in IGBT Increase the speed of the IGTB through a fast driver TE 4862

Actions planed in short term. DC/DC Converter Resonant Power Supply Line “Mosfet” trigger SCR Trig_IN Output specifications have been achieved Prototype the Resonant HV Power Supply Prototype DC/DC Converter TE 4862

Thank you!! TE 4862