Lab3: GaAs Process And Devices Day 1 30um 10um 60um 45um 40um 50um 130um Lab3: GaAs Process And Devices

Theme Day 1- Background Preparation Maxwell Equations-Physical Interpretation & Application Interconnects- Design, Mismatch, & Insertion Losses GaAs Process- Pseudomorphic HEMTs, Inductors & MIM Capacitors Process Introduction Day 2- Power Amplifier, MMIC Design Example DC Characterization- Biasing Decoupling, Biasing Techniques, Thermal Stability Small Signal Characterization- Matching & Stability Large Signal Characterization- Single Tone Analysis, Matching across Power Load Pull Day 3- Design Refining, Layout & Design Post Processing Modulated Signal- QAM16 Input, Ptolemy & Circuit Co-simulations Linearity- Two Tone Analysis, IP3, ACPR, & EVM On-chip Power Combiners & Dividers Layout & Tiling

Direct Vs Indirect Semiconductor Examples: GaAs, InGaAs, AlGaAs, InP Energy Band Vs Wave Number for Indirect Bandgap Semiconductor Material Energy Band Vs Wave Number for Direct Bandgap Semiconductor Material Examples: Si, SiGe, Ge

Velocity Overshoot Velocity Overshoot due to Reduced Carrier-Carrier Interaction

Strained Semiconductor

Quantum Well at Hetero-junction P-type N-type Unbiased PN-junction Critically biased PN-junction Quantum Well

Typical PHEMT Device Structure GaAs InGaAs AlGaAs Ohmic metal (CO) T-shaped Al Gate Silicon Nitride Passivation TiPtAu (N1 Metal) Silicon Nitride Dielectric Gold Plated Metal (EL)

UMS PHEMT Device Models in ADS ADS Setup to Simulate DC Characteristics of PHEMT Device

Small Signal Characteristics of PHEMT Device

Process Details for EM Simulations

Substrate Definition for UMS Dual Metal Process

On-Chip Spiral Inductors 30um 10um 60um 45um 40um 50um 130um

SPICE Model for On-Chip Inductors

On-Chip MIM Capacitor

SPICE Model for On-Chip Capacitors

Lab3: GaAs Process And Devices Start Lab Exercise!