Adapting the via last Design

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Presentation transcript:

Adapting the via last Design Full 3D will require significant developments in active edge sensor processing and wafer bonding to clearly be affordable. It will be very difficult to achieve this by the 2014 TDR. The track/tracklet concept does not depend the aggressive 3D technology – look at a more conservative alternative Because the sensor pixel pitch is large, we can use via-last technology, which is much more conservative, to design a compact bump-bonded module. CERN has pioneered this with IPEDIA Look at a variant of the CERN module to accommodate the long barrel We will also explore using this module without major modifications Design uses only coarse pitch bump bonding and wirebonding Large pitch and diameter (60 micron) TSVs

Analog signals Top detector Amp/disc cluster and stub formation Interposer Long (1 cm) strips Short (1.25 mm) strips Top detector Long (2.5 cm) strips Short (1.25 mm) strips Spacer Readout Chip TSV Flex Jumper Readout bus

Chip in the middle Chip on the bottom Chip on top

Chip on Top Edge Region wirebond Bump bonds TSV Readout Chip Top Sensor Flex Jumper 750m Foam Spacer Bottom Sensor 250m wirebond

Carbon fiber support beam module RVC foam spacer 5 cm 5 cm foam spacer 4 cm 4 cm Carbon fiber support beam foam spacer

Design features D0 Layer 0 The readout chips are via-last – TSVs are drilled in wafers after CMOS fabrication almost any CMOS process can be used. Chips must be thicker – 250 microns vs about 20 Top to bottom connections by flex cable. We have experience with these for D0 Long strip connections to ROIC by wirebond rather than bump Readout bus connections by wirebond –bus sits on IC Long strips longer – 2.5 vs 1 cm. Spacers must be thermally conductive –RVC foam Twice as many modules – we will need to stagger them in radius to minimize dead area Smaller module means more GBTs/DC-DC converter or more complex interconnect Analog cable Flex foldover

CERN Discussions Collaboration on pixel/strip readout chip We discussed the possibility of collaborating on the pixel readout chip. The major difference between the CERN and Fermilab designs is the use of an asychronous pipeline in the Fermilab design.There are certainly common features, including cluster finding and stub finding as well as event storage.  CERN also now has a 65nm front end design.  It would be beneficial in a number of ways if we could collaborate, perhaps on two variants, including common blocks for much of the design, but with a pipelined and clocked variant.  If it makes sense we might use the end-of-November pixel chip visit for more detailed discussions. We will also investigate a variant which includes the long strip amplifier/discriminator into the pixel chip. Study of CERN modules in track/tracklet design We will examine possible arrangement of the CERN modules into a stack suitable for tracklet/track finding.  Duccio will provide drawings. VIA last We will collaborate with CERN in exploring an alternate vendor for via-last technology. I have been in contact (and have a quote from) Allvia.   - CERN wafers I have asked Allvia what information is needed to quote on TSV fabrication on theexisting CERN wafers. Sandro has offered to provide two bumped and two nonbumped wafers.   - Module-specific We will also look at fabrication of dummy via-last wafers which can be used for testing prototype modules.

Status Discussion Active edge testing Bump bonding of VICTR to Sensor (UCD) Bump bonding of full wafers to PCB interposer Active edge top wafer Mechanics and cooling Off-detector processing